Visible electroluminescence from silicon nanoclusters embedded in chlorinated silicon nitride thin films

The silicon-rich silicon-nitride thin films deposited by low pressure chemical vapor deposition at 800° C ~950° C , using dichlorosilane and ammonia as precursors, have the mosaic structure of crystallized silicon nanoclusters embedded in amorphous silicon nitride matrix, showing visible photoluminescence (PL) emission at room temperature with one to five separate peaks. The microstructures of the films change with the deposition temperatures and flux ratios of dichlorosilane to ammonia, which causes changes in the PL spectra of the films. In this paper, we report the experimental results and try to explain it with our gap states model.

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Extraction of the Coefficient of Thermal Expansion of Thin Films from Buckled Membranes

MRS Proceedings ◽

10.1557/proc-546-103 ◽

1998 ◽

Vol 546 ◽

Cited By ~ 7

Author(s):

V. Ziebartl ◽

O. Paul ◽

H. Baltes

Keyword(s):

Thin Films ◽

Finite Element ◽

Thermal Expansion ◽

Silicon Nitride ◽

Excellent Agreement ◽

Energy Minimization ◽

Coefficient Of Thermal Expansion ◽

Temperature Dependent ◽

Minimization Method ◽

Energy Minimization Method

AbstractWe report a new method to measure the temperature-dependent coefficient of thermal expansion α(T) of thin films. The method exploits the temperature dependent buckling of clamped square plates. This buckling was investigated numerically using an energy minimization method and finite element simulations. Both approaches show excellent agreement even far away from simple critical buckling. The numerical results were used to extract Cα(T) = α0+α1(T−T0 ) of PECVD silicon nitride between 20° and 140°C with α0 = (1.803±0.006)×10−6°C−1, α1 = (7.5±0.5)×10−9 °C−2, and T0 = 25°C.

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Visible photoluminescence from silicon nanoclusters embedded in silicon nitride films prepared by remote plasma-enhanced chemical vapor deposition

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2006.12.047 ◽

2007 ◽

Vol 38 (1-2) ◽

pp. 148-151 ◽

Cited By ~ 6

Author(s):

A. Benami ◽

G. Santana ◽

B.M. Monroy ◽

A. Ortiz ◽

J.C. Alonso ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Nanoclusters ◽

Remote Plasma ◽

Visible Photoluminescence ◽

Silicon Nitride Films

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In situ IR observation of photo-chemically deposited silicon nitride thin films

Applied Surface Science ◽

10.1016/0169-4332(91)90365-q ◽

1991 ◽

Vol 48-49 ◽

pp. 409-413 ◽

Cited By ~ 5

Author(s):

T. Wadayama ◽

T. Hihara ◽

A. Hatta ◽

W. Suëtaka

Keyword(s):

Thin Films ◽

Silicon Nitride ◽

In Situ Ir

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Dual mechanical behaviour of hydrogen in stressed silicon nitride thin films

Journal of Applied Physics ◽

10.1063/1.4887814 ◽

2014 ◽

Vol 116 (4) ◽

pp. 043506 ◽

Cited By ~ 2

Author(s):

F. Volpi ◽

M. Braccini ◽

A. Devos ◽

G. Raymond ◽

A. Pasturel ◽

...

Keyword(s):

Thin Films ◽

Silicon Nitride ◽

Mechanical Behaviour ◽

Stressed Silicon

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Characterization of Silicon Nitride Thin Films on Si and Overlayer Growth of Si and Ge

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.4292 ◽

2001 ◽

Vol 40 (Part 1, No. 6B) ◽

pp. 4292-4298 ◽

Cited By ~ 5

Author(s):

Xue-Sen Wang ◽

Zongquan Li ◽

Lei Wang ◽

Yanfang Hu ◽

Guangjie Zhai ◽

...

Keyword(s):

Thin Films ◽

Silicon Nitride

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Microbridge Testing of Thin Films Under Small Deformation

MRS Proceedings ◽

10.1557/proc-594-477 ◽

1999 ◽

Vol 594 ◽

Cited By ~ 5

Author(s):

T. Y. Zhang ◽

Y. J. Su ◽

C. F. Qian ◽

M. H. Zhao ◽

L. Q. Chen

Keyword(s):

Thin Films ◽

Residual Stress ◽

Silicon Nitride ◽

Young’S Modulus ◽

Young's Modulus ◽

Chemical Vapor ◽

Small Deformation ◽

Nitride Film ◽

Silicon Nitride Film ◽

Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

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