A rectilinear plasma filtering system for vacuum-arc deposition of diamond-like carbon coatings

1999 ◽  
Vol 8 (2-5) ◽  
pp. 468-471 ◽  
Author(s):  
I.I. Aksenov ◽  
V.A. Belous ◽  
V.V. Vasil'ev ◽  
Yu.Ya. Volkov ◽  
V.E. Strel'nitskij
1995 ◽  
Vol 4 (5-6) ◽  
pp. 791-793
Author(s):  
V.S. Bojko ◽  
L.F. Krivenko ◽  
V.G. Marinin ◽  
I.L. Ostapenko ◽  
V.E. Strel'nitskij

2014 ◽  
Vol 31 (2) ◽  
pp. 85-89 ◽  
Author(s):  
A. Wasy ◽  
G. Balakrishnan ◽  
S. Lee ◽  
J.-K. Kim ◽  
T. G. Kim ◽  
...  

2007 ◽  
Vol 516 (2-4) ◽  
pp. 243-247 ◽  
Author(s):  
Jin-Bao Wu ◽  
Jia-Jen Chang ◽  
Mei-Yi Li ◽  
Ming-Sheng Leu ◽  
Ai-Kang Li

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jae-Il Kim ◽  
Young-Jun Jang ◽  
Jisoo Kim ◽  
Jongkuk Kim

AbstractIn this study, silicon (Si) was doped on a tetrahedral amorphous carbon (ta-C) coating and the tribological characteristics of the resulting Si-doped diamond-like carbon (DLC; a-C:Si:H) were investigated against a SUJ2 ball. The Si fraction in the coating was varied from 0 to ~ 20 at.% by increasing the trimethylsilane gas flow rate during filtered cathodic vacuum arc deposition. The coefficient of friction (CoF) showed no obvious change when the Si fraction was less than ~ 7 at.%. However, after Si doping, it significantly decreased when the Si fraction was greater than ~ 8 at.%. The running-in period also decreased to less than 1000 cycles after Si doping. The rapid formation of Si-rich debris and transfer layer led to the fabrication of a low-friction tribofilm, which was induced by the tribochemical reaction with moisture under ambient conditions. When the Si fraction was ~ 17 at.%, the lowest CoF of less than 0.05 was obtained. Further Si doping beyond the critical point led to the destruction of the film because of reduced hardness.


2006 ◽  
Author(s):  
Hai-feng Liang ◽  
Yi-xin Yan ◽  
Qian Mi ◽  
Jun-qi Xu ◽  
Chang-long Cai

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