Understanding the chemistry of low temperature diamond growth: an investigation into the interaction of chlorine and atomic hydrogen at CVD diamond surfaces

2000 ◽  
Vol 9 (3-6) ◽  
pp. 246-250 ◽  
Author(s):  
Simon Proffitt ◽  
Christopher H.B. Thompson ◽  
Aurora Gutierrez-Sosa ◽  
Nathan Paris ◽  
Nagindar K. Singh ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Hydrogen ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Diamond Surfaces

Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 999-1002
Author(s):  
Junji Senzaki ◽  
Atsushi Shimozato ◽  
Kenji Fukuda
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Atomic Hydrogen ◽  
High Reliability ◽  
Hydrogen Atmosphere ◽  
Exposed Sample ◽  
New Apparatus ◽  
Hydrogen Radical ◽  
Hydrogen Radicals ◽  
Sic Wafer

Low-temperature post-oxidation annealing (POA) process of high-reliability thermal oxides grown on 4H-SiC using new apparatus that generates atomic hydrogen radicals by high-temperature catalyzer has been investigated. Atomic hydrogen radicals were generated by thermal decomposition of H2 gas at the catalyzer surface heated at high temperature of 1800°C, and then exposed to the sample at 500°C in reactor pressure of 20 Pa. The mode and maximum values of field-to-breakdown are 11.0 and 11.2 MV/cm, respectively, for the atomic hydrogen radical exposed sample. In addition, the charge-to-breakdown at 63% cumulative failure of the thermal oxides for atomic hydrogen radical exposed sample was 0.51 C/cm2, which was higher than that annealed at 800°C in hydrogen atmosphere (0.39 C/cm2). Consequently, the atomic hydrogen radical exposure at 500°C has remarkably improved the reliability of thermal oxides on 4H-SiC wafer, and is the same effect with high-temperature hydrogen POA at 800°C.

Deuterium depth profiles at CVD diamond surfaces

2001 ◽  
Vol 481 (1-3) ◽  
pp. L433-L436 ◽  
Author(s):  
A. Bergmaier ◽  
G. Dollinger ◽  
A. Aleksov ◽  
P. Gluche ◽  
E. Kohn
Keyword(s):  
Cvd Diamond ◽  
Diamond Surfaces ◽  
Depth Profiles

Low-Temperature Transport Properties of Holes Introduced by Ionic Liquid Gating in Hydrogen-Terminated Diamond Surfaces

2013 ◽  
Vol 82 (7) ◽  
pp. 074718 ◽  
Author(s):  
Takahide Yamaguchi ◽  
Eiichiro Watanabe ◽  
Hirotaka Osato ◽  
Daiju Tsuya ◽  
Keita Deguchi ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Low Temperature ◽  
Transport Properties ◽  
Diamond Surfaces

Investigation of silicon-vacancy centers formation during the CVD diamond growth of thin and delta doped layers

2021 ◽  
Author(s):  
Mikhail Lobaev ◽  
Alexey Gorbachev ◽  
Dmitry Radishev ◽  
Anatoly Vikharev ◽  
Sergey Bogdanov ◽  
...  
Keyword(s):  
Cvd Diamond ◽  
Diamond Growth ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Silicon Doped ◽  
The Relationship

The results of a study of the deposition of silicon-doped epitaxial diamond layers in a microwave CVD reactor to create silicon-vacancy color centers are presented. The relationship between the optical...

Characterization of hydrogen-terminated CVD diamond surfaces and their contact properties

1994 ◽  
Vol 3 (4-6) ◽  
pp. 961-965 ◽  
Author(s):  
H. Kawarada ◽  
M. Aoki ◽  
H. Sasaki ◽  
K. Tsugawa
Keyword(s):  
Cvd Diamond ◽  
Diamond Surfaces
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