Chemical-vapor deposited large-area multicrystalline epitaxial silicon solar cells on upgraded metallurgical silicon/graphite substrates

2001 ◽  
Vol 23 (3-4) ◽  
pp. 399-408 ◽  
Author(s):  
R.A AbdelRassoul
Solar Cells ◽  
1981 ◽  
Vol 5 (1) ◽  
pp. 29-38 ◽  
Author(s):  
T.L. Chu ◽  
Shirley S. Chu ◽  
L.L. Kazmerski ◽  
Ray Whitney ◽  
C.L. Lin ◽  
...  

2005 ◽  
Vol 13 (8) ◽  
pp. 673-690 ◽  
Author(s):  
Filip Duerinckx ◽  
Kris Van Nieuwenhuysen ◽  
Hyonju Kim ◽  
Izabela Kuzma-Filipek ◽  
Harold Dekkers ◽  
...  

2011 ◽  
Vol 520 (4) ◽  
pp. 1218-1222 ◽  
Author(s):  
J. Steinhauser ◽  
J.-F. Boucher ◽  
E. Omnes ◽  
D. Borrello ◽  
E. Vallat-Sauvain ◽  
...  

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Chih-Hsiang Yang ◽  
Shui-Yang Lien ◽  
Chia-Ho Chu ◽  
Chung-Yuan Kung ◽  
Tieh-Fei Cheng ◽  
...  

Composite silicon dioxide-titanium dioxide (SiO2-TiO2) films are deposited on a large area of 15.6 × 15.6 cm2textured multicrystalline silicon solar cells to increase the incident light trapped within the device. For further improvement of the antireflective coatings (ARCs) quality, dimethylformamide (DMF) solution is added to the original SiO2-TiO2solutions. DMF solution solves the cracking problem, thus effectively decreasing reflectance as well as surface recombination. The ARCs prepared by sol-gel process and plasma-enhanced chemical vapor deposition (PECVD) on multicrystalline silicon substrate are compared. The average efficiency of the devices with improved sol-gel ARCs is 16.3%, only 0.5% lower than that of devices with PECVD ARCs (16.8%). However, from equipment depreciation point of view (the expiration date of equipment is generally considered as 5 years), the running cost (USD/watt) of sol-gel technique is 80% lower than that of PECVD method for the first five years and 66% lower than that of PECVD method from the start of the sixth year. This result proves that sol-gel-deposited ARCs process has potential applications in manufacturing low-cost, large-area solar cells.


1975 ◽  
Author(s):  
T.L. Chu ◽  
K.Y. Duh ◽  
G.A. Van der Leeden ◽  
K.N. Singh

2006 ◽  
Vol 90 (20) ◽  
pp. 3557-3567 ◽  
Author(s):  
U. Gangopadhyay ◽  
K.H. Kim ◽  
S.K. Dhungel ◽  
U. Manna ◽  
P.K. Basu ◽  
...  

2011 ◽  
Vol 8 ◽  
pp. 487-492 ◽  
Author(s):  
F. Book ◽  
T. Wiedenmann ◽  
G. Schubert ◽  
H. Plagwitz ◽  
G. Hahn

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