Morphology and orientation relationship of VC precipitates in HSLA steel

2006 ◽  
Vol 13 (5) ◽  
pp. 420-423 ◽  
Author(s):  
Shijian Yan ◽  
Xiaoping Liu ◽  
Wenhuai Tian
Keyword(s):  
Orientation Relationship ◽  
Hsla Steel ◽  
Relationship Of

Domain orientation relationship of orthorhombic and coexisting monoclinic phases of YO1.5-doped HfO2 epitaxial thin films

2018 ◽  
Vol 57 (11S) ◽  
pp. 11UF16 ◽  
Author(s):  
Takanori Kiguchi ◽  
Takahisa Shiraishi ◽  
Takao Shimizu ◽  
Hiroshi Funakubo ◽  
Toyohiko J. Konno
Keyword(s):  
Thin Films ◽  
Orientation Relationship ◽  
Epitaxial Thin Films ◽  
Domain Orientation ◽  
Relationship Of

scholarly journals EBSD Analysis for Orientation Relationship of Textured ZrB2-SiC Ultra-high Temperature Ceramics

2018 ◽  
Vol 33 (4) ◽  
pp. 380 ◽  
Author(s):  
ZHENG Hai-Ya ◽  
MENG Chen-Xi ◽  
HU Dong-Li ◽  
GU Hui ◽  
LIU Hai-Tao ◽  
...  
Keyword(s):  
High Temperature ◽  
Orientation Relationship ◽  
Ebsd Analysis ◽  
Ultra High Temperature Ceramics ◽  
Relationship Of ◽  
Ultra High Temperature

Interface structure of face-centered-cubic-Ti thin film grown on 6H–SiC substrate

2000 ◽  
Vol 15 (10) ◽  
pp. 2121-2124 ◽  
Author(s):  
Y. Sugawara ◽  
N. Shibata ◽  
S. Hara ◽  
Y. Ikuhara
Keyword(s):  
Thin Film ◽  
Orientation Relationship ◽  
High Resolution Electron Microscopy ◽  
Electron Beam Evaporation ◽  
Face Centered Cubic ◽  
High Adhesion ◽  
Resolution Electron ◽  
Face Centered ◽  
Relationship Of ◽  
High Degree

A titanium thin film was deposited on the flat (0001) face of a 6H–SiC by electron beam evaporation at room temperature in a vacuum of 5.1 × 10−8 Pa. The Ti film was epitaxially grown on the surface, and the interface between Ti and SiC was characterized by high-resolution electron microscopy. It was found that the structure of the deposited titanium is face-centered cubic (fcc), although bulk titanium metal usually has a hexagonal close-packed or body-centered cubic crystal structure. We believe that the unusual fcc structure of Ti thin film is due to the high adhesion of the film to the substrate and the high degree of coherency between them. The orientation relationship of the fcc-Ti/6H–SiC interface was (111)fcc-Ti//(0001)6H–SiC and [110]fcc-Ti//[1120]6H−SiC. Preliminary calculations indicate that this orientation relationship maximizes the lattice coherency across the interface.

Localized dissolution of grain boundary T1 precipitates in Al-3Cu-2Li

2015 ◽  
Vol 33 (6) ◽  
pp. 395-401 ◽  
Author(s):  
Ramasis Goswami
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundary ◽  
Orientation Relationship ◽  
S Phase ◽  
Dissolution Behavior ◽  
Moist Air ◽  
Orientation Relation ◽  
Transmission Electron ◽  
Relationship Of

AbstractTransmission electron microscopy (TEM) was employed to investigate the dissolution behavior of nanocrystalline grain boundary T1 precipitates in Al-3Cu-2Li. These grain boundary T1 plates exhibit an orientation relation with matrix, with the (1-11)α-Al parallel to (0001)T1 and [022]α-Al parallel to [10-10]T1, which is similar to the orientation relationship of T1 plates formed within grains. TEM studies showed that these grain boundary T1 plates react readily in moist air. As a result of the localized dissolution, the Cu-rich clusters form onto T1, which is consistent with the localized dissolution behavior observed in nanocrystalline S phase in Al-Cu-Mg.

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