Domain orientation relationship of orthorhombic and coexisting monoclinic phases of YO1.5-doped HfO2 epitaxial thin films

2018 ◽  
Vol 57 (11S) ◽  
pp. 11UF16 ◽  
Author(s):  
Takanori Kiguchi ◽  
Takahisa Shiraishi ◽  
Takao Shimizu ◽  
Hiroshi Funakubo ◽  
Toyohiko J. Konno
1994 ◽  
Vol 9 (2) ◽  
pp. 410-419 ◽  
Author(s):  
K.J. Vaidya ◽  
C.Y. Yang ◽  
M. DeGraef ◽  
F.F. Lange

We have grown epitaxial thin films of rare-earth hexa-aluminates on basal plane sapphire from liquid precursors. LnAl11O18 (Ln = Gd3+, Nd3+) films form via the reaction of a perovskite intermediate phase and the sapphire substrate according to LnAlO3 + 5Al2O3 = LnAl11O18. Hexa-aluminate thin films with magnetoplumbite (MP) structure grow epitaxially with (0001)mp ‖(0001)s, 〈1120mp‖〈1010〉s orientation relationship. The a-axis of the film is rotated 30°with respect to the substrate. This rotation results in a smaller mismatch (∼1%) between the two oxygen sublattices. Thermodynamic and kinetic arguments pertaining to magnetoplumbite formation for the smaller Gd3+ cation are presented. These epitaxial thin films are likely to have application in higher temperature ion conduction, catalysis, fluorescence, and as laser host.


2004 ◽  
Vol 19 (9) ◽  
pp. 2725-2729 ◽  
Author(s):  
Atsushi Sasaki ◽  
Jin Liu ◽  
Wakana Hara ◽  
Shusaku Akiba ◽  
Keisuke Saito ◽  
...  

Room-temperature epitaxy of AlN thin films on sapphire (0001) substrates was achieved by pulsed laser deposition using an epitaxial NiO ultrathin buffer layer (approximately 6 nm thick). Four-circle x-ray diffraction analysis indicates a double heteroepitaxial structure of AlN (0001)/NiO(111)/sapphire (0001) with the epitaxial relationship of AlN [10-10] ‖ NiO [11-2] ‖ sapphire [11-20]. The surface morphology of room-temperature grown AlN thin films was found to be atomically smooth and nanostepped, reflecting the surface of the ultrasmooth sapphire substrate with 0.2-nm-high steps.


2017 ◽  
Vol 110 (21) ◽  
pp. 212905 ◽  
Author(s):  
Tsukasa Katayama ◽  
Shintaro Yasui ◽  
Yosuke Hamasaki ◽  
Mitsuru Itoh

Author(s):  
Fumio Watari ◽  
J. M. Cowley

STEM coupled with the optical system was used for the investigation of the early oxidation on the surface of Cr. Cr thin films (30 – 1000Å) were prepared by evaporation onto the polished or air-cleaved NaCl substrates at room temperature and 45°C in a vacuum of 10−6 Torr with an evaporation speed 0.3Å/sec. Rather thick specimens (200 – 1000Å) with various preferred orientations were used for the investigation of the oxidation at moderately high temperature (600 − 1100°C). Selected area diffraction patterns in these specimens are usually very much complicated by the existence of the different kinds of oxides and their multiple twinning. The determination of the epitaxial orientation relationship of the oxides formed on the Cr surface was made possible by intensive use of the optical system and microdiffraction techniques. Prior to the formation of the known rhombohedral Cr2O3, a thin spinel oxide, probably analogous to γ -Al203 or γ -Fe203, was formed. Fig. 1a shows the distinct epitaxial growth of the spinel (001) as well as the rhombohedral (125) on the well-oriented Cr(001) surface. In the case of the Cr specimen with the (001) preferred orientation (Fig. 1b), the rings explainable by spinel structure appeared as well as the well defined epitaxial spots of the spinel (001). The microdif fraction from 20A areas (Fig. 2a) clearly shows the same pattern as Fig. Ia with the weaker oxide spots among the more intense Cr spots, indicating that the thickness of the oxide is much less than that of Cr. The rhombohedral Cr2O3 was nucleated preferably at the Cr(011) sites provided by the polycrystalline nature of the present specimens with the relation Cr2O3 (001)//Cr(011), and by further oxidation it grew into full coverage of the rest of the Cr surface with the orientation determined by the initial nucleation.


2021 ◽  
Vol 207 ◽  
pp. 116683
Author(s):  
Jun Young Lee ◽  
Gopinathan Anoop ◽  
Sanjith Unithrattil ◽  
WooJun Seol ◽  
Youngki Yeo ◽  
...  

2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Dongyi Qin ◽  
Kazumasa Iida ◽  
Takafumi Hatano ◽  
Hikaru Saito ◽  
Yiming Ma ◽  
...  

2021 ◽  
Vol 129 (9) ◽  
pp. 093903
Author(s):  
Manik Kuila ◽  
Uday Deshpande ◽  
R. J. Choudhary ◽  
Parasmani Rajput ◽  
D. M. Phase ◽  
...  

2017 ◽  
Vol 1 (7) ◽  
Author(s):  
Irene Lucas ◽  
Pilar Jiménez-Cavero ◽  
J. M. Vila-Fungueiriño ◽  
Cesar Magén ◽  
Soraya Sangiao ◽  
...  

AIP Advances ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 045124
Author(s):  
Cacie Hart ◽  
Zoey Warecki ◽  
Grace Yong ◽  
David Houston ◽  
Rajeswari Kolagani

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