Morphology and optical properties of self-assembled In0.5Ga0.5As quantum dots with different spacer layer thickness

2010 ◽  
Vol 15 (5) ◽  
pp. 534-539 ◽  
Author(s):  
Didik Aryanto ◽  
Abd. Khamim Lsrnail ◽  
Zulkafli Othaman
2015 ◽  
Vol 107 (17) ◽  
pp. 173109 ◽  
Author(s):  
Yeongho Kim ◽  
Keun-Yong Ban ◽  
Allison Boley ◽  
David J. Smith ◽  
Christiana B. Honsberg

2012 ◽  
Vol 111 (7) ◽  
pp. 074305 ◽  
Author(s):  
Yasushi Shoji ◽  
Kohei Narahara ◽  
Hideharu Tanaka ◽  
Takashi Kita ◽  
Katsuhiro Akimoto ◽  
...  

2015 ◽  
Vol 6 ◽  
pp. 2046-2051 ◽  
Author(s):  
Chamanei S Perera ◽  
Alison M Funston ◽  
Han-Hao Cheng ◽  
Kristy C Vernon

In this paper we image the highly confined long range plasmons of a nanoscale metal stripe waveguide using quantum emitters. Plasmons were excited using a highly focused 633 nm laser beam and a specially designed grating structure to provide stronger incoupling to the desired mode. A homogeneous thin layer of quantum dots was used to image the near field intensity of the propagating plasmons on the waveguide. We observed that the photoluminescence is quenched when the QD to metal surface distance is less than 10 nm. The optimised spacer layer thickness for the stripe waveguides was found to be around 20 nm. Authors believe that the findings of this paper prove beneficial for the development of plasmonic devices utilising stripe waveguides.


2004 ◽  
Vol 831 ◽  
Author(s):  
A. Neogi ◽  
B. P. Gorman ◽  
H. Morkoç ◽  
T. Kawazoe ◽  
M. Ohtsu ◽  
...  

ABSTRACTWe investigate the spatial distribution and emission properties of self-assembled GaN/AlN quantum dots. High-resolution transmission electron microscopy reveals near vertical correlation among the GaN dots due to a sufficiently thin AlN spacer layer thickness, which allows strain induced stacking. Scanning electron and atomic force microscopy show lateral coupling due to a surface roughness of ∼ 50–60 nm. Near-field photoluminescence in the illumination mode (both spatially and spectrally resolved) at 10 K revealed emission from individual dots, which exhibits size distribution of GaN dots from localized sites in the stacked nanostructure. Strong spatial localization of the excitons is observed in GaN quantum dots formed at the tip of self-assembled hexagonal pyramid shapes with six [101 1] facets.


2005 ◽  
Vol 2 (4) ◽  
pp. 1399-1403 ◽  
Author(s):  
M. Hjiri ◽  
F. Hassen ◽  
H. Maaref ◽  
A. Jbeli ◽  
M. Senes ◽  
...  

2003 ◽  
Vol 101 (1-3) ◽  
pp. 259-261 ◽  
Author(s):  
B. Salem ◽  
G. Brèmond ◽  
M. Hjiri ◽  
F. Hassen ◽  
H. Maaref ◽  
...  

2011 ◽  
Vol 318 (1) ◽  
pp. 1113-1116
Author(s):  
Kazuma Tani ◽  
Shingo Fuchi ◽  
Ryota Mizutani ◽  
Toru Ujihara ◽  
Yoshikazu Takeda

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