Near Field Optical Spectroscopy of GaN/AlN Quantum Dots

2004 ◽  
Vol 831 ◽  
Author(s):  
A. Neogi ◽  
B. P. Gorman ◽  
H. Morkoç ◽  
T. Kawazoe ◽  
M. Ohtsu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Near Field ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Spacer Layer Thickness ◽  
Spacer Layer ◽  
Lateral Coupling ◽  
Self Assembled ◽  
Spectrally Resolved

ABSTRACTWe investigate the spatial distribution and emission properties of self-assembled GaN/AlN quantum dots. High-resolution transmission electron microscopy reveals near vertical correlation among the GaN dots due to a sufficiently thin AlN spacer layer thickness, which allows strain induced stacking. Scanning electron and atomic force microscopy show lateral coupling due to a surface roughness of ∼ 50–60 nm. Near-field photoluminescence in the illumination mode (both spatially and spectrally resolved) at 10 K revealed emission from individual dots, which exhibits size distribution of GaN dots from localized sites in the stacked nanostructure. Strong spatial localization of the excitons is observed in GaN quantum dots formed at the tip of self-assembled hexagonal pyramid shapes with six [101 1] facets.

Optical And Structural properties of Vertical Aligned Self-Assembled InAs Quantum Dots Multilayers

2001 ◽  
Vol 676 ◽  
Author(s):  
J. C. González ◽  
M. I. N. da Silva ◽  
W. N. Rodrigues ◽  
F. M. Matinaga ◽  
R. Magalhaes-Paniago ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Self Assembled

ABSTRACTIn this work, we report optical and structural properties of vertical aligned self-assembled InAs quantum dots multilayers. The InAs quantum dots samples were grown by Molecular Beam Epitaxy. Employing Atomic Force Microscopy, Transmission Electron Microscopy, and Gracing Incident X-ray Diffraction we have studied the structural properties of samples with different number of periods of the multiplayer structure, as well as different InAs coverage. The optical properties were studied using Photoluminescence spectroscopy.

Fabrication and Characterization of Stacked Self-Assembled In0.5Ga0.5As/GaAs Quantum Dots Grown by MOCVD

2014 ◽  
Vol 896 ◽  
pp. 215-218
Author(s):  
Didik Aryanto ◽  
Zulkafli Othaman ◽  
A. Khamim Ismail
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Metal Organic ◽  
Self Assembled

Stacked self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) were grown using metal organic chemical vapor deposition (MOCVD). Atomic force microscopy (AFM), transmission electron microscopy (TEM) and high resolution X-ray diffraction (HR-XDR) show the effects of stacking on morphology and structure of QDs. Strains due to the buried QDs affect the shape and alignment of the successive layers. Capping of these QDs also determine the quality of the top most QDs structure.

Ball-Milling Graphite Used for Synthesis of Biocompatible Blue Luminescent Graphene Quantum Dots

2021 ◽  
Vol 6 (2) ◽  
Author(s):  
Zhou J ◽  
◽  
Dong Y ◽  
Ma Y ◽  
Zhang T ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ball Milling ◽  
Graphene Quantum Dots ◽  
Raw Material ◽  
Hydroxyl Groups ◽  
High Quality ◽  
Widespread Application ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

Graphene Quantum Dots (GQDs) have been prepared by oxidationhydrothermal reaction, using ball-milling graphite as the starting materials. The prepared GQDs are endowed with excellent luminescence properties, with the optimum emission of 320nm. Blue photoluminescent emitted from the GQDs under ultraviolet light. The GQDs are ~3nm in width and 0.5~2 nm in thickness, revealed by high-resolution transmission electron microscopy and atomic force microscopy. In addition, Fourier transform infrared spectrum evidences the existence of carbonyl and hydroxyl groups, meaning GQDs can be dispersed in water easily and used in cellar imaging, and blue area inside L929 cells were clearly observed under the fluorescence microscope. Both low price of raw material and simple prepared method contribute to the high quality GQDs widespread application in future.

Lateral Coupling of Self-Assembled Quantum Dots Studied by Near-Field Spectroscopy

1999 ◽  
Vol 571 ◽  
Author(s):  
H.D. Robinson ◽  
B.B. Goldberg ◽  
J.L. Merz
Keyword(s):  
Quantum Dots ◽  
Additional Data ◽  
High Spatial Resolution ◽  
Large Fraction ◽  
Near Field ◽  
Localized States ◽  
Emission Lines ◽  
Lateral Coupling ◽  
Self Assembled ◽  
Density Regime

ABSTRACTLateral coupling between separate quantum dots has been observed in a system of In0.55A10.45As self-assembled quantum dots. The experiment was performed by taking photoluminescence excitation (PLE) spectra in the optical near-field at 4.2 K. The high spatial resolution afforded by the near-field technique allows us to resolve individual dots in a density regime where interactions between neighboring dots become apparent. In the PLE spectra, narrow resonances are observed in the emission lines of individual dots. A large fraction of these resonances occur simultaneously in several emission lines, originating from different quantum dots. This is evidence of interdot scattering of carriers, which additional data show to be mediated by localized states at energies below the wetting layer exciton energy. A very rich phonon spectrum generated by the complicated interfaces between barrier and dot material is also evident in the data.

scholarly journals Mapping bound plasmon propagation on a nanoscale stripe waveguide using quantum dots: influence of spacer layer thickness

2015 ◽  
Vol 6 ◽  
pp. 2046-2051 ◽  
Author(s):  
Chamanei S Perera ◽  
Alison M Funston ◽  
Han-Hao Cheng ◽  
Kristy C Vernon
Keyword(s):  
Quantum Dots ◽  
Laser Beam ◽  
Layer Thickness ◽  
Near Field ◽  
Surface Distance ◽  
Spacer Layer Thickness ◽  
Spacer Layer ◽  
20 Nm ◽  
Mode A ◽  
Plasmon Propagation

In this paper we image the highly confined long range plasmons of a nanoscale metal stripe waveguide using quantum emitters. Plasmons were excited using a highly focused 633 nm laser beam and a specially designed grating structure to provide stronger incoupling to the desired mode. A homogeneous thin layer of quantum dots was used to image the near field intensity of the propagating plasmons on the waveguide. We observed that the photoluminescence is quenched when the QD to metal surface distance is less than 10 nm. The optimised spacer layer thickness for the stripe waveguides was found to be around 20 nm. Authors believe that the findings of this paper prove beneficial for the development of plasmonic devices utilising stripe waveguides.

Electroless Synthesis of 1.4 nm Pd and Pt Nanoparticles on Self-Assembled Rosette Nanotubes

2011 ◽  
Vol 1301 ◽  
Author(s):  
Rahul Chhabra ◽  
Hicham Fenniri
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Pt Nanoparticles ◽  
Hierarchical Organization ◽  
X Ray ◽  
Force Microscopy ◽  
Rosette Nanotubes ◽  
Atomic Force ◽  
Transmission Electron ◽  
Self Assembled

ABSTRACTElectroless synthesis and hierarchical organization of 1.4 nm Pd and Pt nanoparticles (NPs) on self-assembled Rosette Nanotubes (RNTs) is described. The nucleated NPs are nearly monodisperse and reveal supramolecular organizations guided by RNT templates. Interestingly, the narrow size distribution is attributable to unique templating behavior of RNTs. The resulting metal NP-RNT composites were characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). X-ray Photoelectron Spectroscopy (XPS) was also performed to confirm the nature and composition of RNT-templated NPs.

Ordering of InGaAs Quantum Dots Grown by Molecular Beam Epitaxy under As2 gas flux

2015 ◽  
Vol 1792 ◽  
Author(s):  
Mourad Benamara ◽  
Yuriy I. Mazur ◽  
Peter Lytvyn ◽  
Morgan E. Ware ◽  
Vitaliy Dorogan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Molecular Beam Epitaxy ◽  
Large Scale ◽  
Molecular Beam ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

ABSTRACTThe influence of the substrate temperature on the morphology and ordering of InGaAs quantum dots (QD), grown on GaAs (001) wafers by Molecular Beam Epitaxy (MBE) under As2 flux has been studied using Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM) and Photoluminescence (PL) measurements. The experimental results show that lateral and vertical orderings occur for temperatures greater than 520°C and that QDs self-organize in a 6-fold symmetry network on (001) surface for T=555°C. Vertical orderings of asymmetric QDs, along directions a few degrees off [001], are observed on a large scale and their formation is discussed.

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