Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice

2000 ◽  
Vol 8 (2) ◽  
pp. 141-145 ◽  
Author(s):  
Jiannong Wang ◽  
Baoquan Sun ◽  
Xiangrong Wang ◽  
Yuqi Wang ◽  
Wekun Ge ◽  
...  
2011 ◽  
Vol 23 (28) ◽  
pp. 3187-3191 ◽  
Author(s):  
Tuomas H. E. Lahtinen ◽  
Jussi O. Tuomi ◽  
Sebastiaan van Dijken

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1594-1599 ◽  
Author(s):  
M. P. TELENKOV ◽  
YU. A. MITYAGIN

The transverse resonant tunneling transport and electric field domain formation in GaAs/AlGaAs superlattices were investigated in a strong tilted magnetic field. The magnetic field component parallel to structure layers causes intensive tunneling transition between Landau levels with Δn≠0, resulting in the considerable "inhomogeneous" broadening of intersubband tunneling resonance as well as in the shift of the resonance toward higher electric fields. This leads to noticeable changes of the I-V characteristics of the superlattice, namely to smoothing of the periodic NDC structure on plateau-like regions caused by formation of the electric field domains and to the shift of the plateaus toward the higher applied voltage. The predicted behavior of the I-V characteristics of the structures in magnetic field was found experimentally.


1998 ◽  
Vol 58 (12) ◽  
pp. R7528-R7531 ◽  
Author(s):  
Naoki Ohtani ◽  
Norifumi Egami ◽  
Holger T. Grahn ◽  
Klaus H. Ploog ◽  
Luis L. Bonilla

1999 ◽  
Vol 26 (5-6) ◽  
pp. 107-116 ◽  
Author(s):  
Uma Belegundu ◽  
X. H. Du ◽  
Amar Bhalla ◽  
Kenji Uchino

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