scholarly journals Metal–insulator transition and spin degree of freedom in Silicon 2D electron systems

2000 ◽  
Vol 6 (1-4) ◽  
pp. 260-263 ◽  
Author(s):  
T Okamoto ◽  
K Hosoya ◽  
S Kawaji ◽  
A Yagi ◽  
A Yutani ◽  
...  
2019 ◽  
Vol 33 (12) ◽  
pp. 1950148
Author(s):  
Yongcheng Liang ◽  
Ping Qin ◽  
Zhiyong Liang ◽  
Lizhen Zhang ◽  
Xun Yuan ◽  
...  

Metal-insulator transition (MIT) underlies many remarkable and technologically important phenomena in VO2. Even though its monoclinic structure had before been the reserve of the insulating state, recent experiments have observed an unexpected monoclinic metallic state. Here, we use a modified approach combining first-principles calculations with orbital-biased potentials to reproduce the correct stability ordering and electronic structures of different phases of VO2. We identify a ferromagnetic monoclinic metal that is likely to be the experimentally observed mysterious metastable state. Furthermore, the calculations show that an isostructural insulator-metal electronic transition is followed by the lattice distortion from the monoclinic structure to the rutile one. These results not only explain the experimental observations of the monoclinic metallic state and the decoupled structural and electronic transitions of VO2, but also provide a useful understanding for the metal-insulator transition in other strongly correlated d electron systems.


2006 ◽  
Vol 20 (30n31) ◽  
pp. 5229-5238
Author(s):  
DAVID NEILSON ◽  
D. J. WALLACE GELDART

We show the insulating region of the metal-insulator transition phenomena in disordered two-dimensional electron systems contains new information about the quantum critical dynamics at low T because the insulating region and the quantum critical region are two aspects of the localized phase.


Author(s):  
Alexander Shashkin ◽  
Sergey Kravchenko

We review the latest developments in the field of the metal-insulator transition in strongly-correlated two-dimensional electron systems. Particular attention is given to recent discoveries of a sliding quantum electron solid and interaction-induced spectrum flattening at the Fermi level in high-quality silicon-based structures.


2000 ◽  
Vol 53 (4) ◽  
pp. 531 ◽  
Author(s):  
D. Neilson ◽  
J. S. Thakur ◽  
E. Tosatti

We investigate the metal—insulator transition in 2D electron systems assuming a percolation mechanism connecting through a network of metallic domains. The size of the domains is determined by the level of disorder and the strength of the electron correlations. The domains are linked through quantum tunneling. We determine the dependence of the resistivity on electron density and temperature by calculating the tunnelling transmission through the potential barriers between the domains. The results are in good agreement with recent experimental measurements.


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