scholarly journals Recombination Processes

1983 ◽  
Vol 103 ◽  
pp. 199-209 ◽  
Author(s):  
P. J. Storey
Keyword(s):  
Cross Sections ◽  
Radiative Recombination ◽  
Dielectronic Recombination ◽  
Ionization Threshold ◽  
Recombination Coefficient ◽  
Recombination Processes ◽  
Autoionizing States

The role of resonances in the photoionization cross-sections of ions is discussed in relation to the radiative recombination coefficient. The calculation of dielectronic contributions to the recombination coefficient is reviewed for nebular conditions, and the importance of autoionizing states close to the first ionization threshold is illustrated. For those ions for which dielectronic recombination is not important at nebular temperatures, an assessment of the accuracy of the best available recombination coefficients is given.

Role of the gaunt factor in the derivation of dielectronic recombination coefficient

Solar Physics ◽  
1985 ◽  
Vol 96 (2) ◽  
pp. 219-227 ◽  
Author(s):  
Badr� Alam ◽  
S. M. Razaullah Ansari
Keyword(s):  
Dielectronic Recombination ◽  
Recombination Coefficient

scholarly journals Superconductor-based Light Emitting Diode: Demonstration of Role of Cooper Pairs in Radiative Recombination Processes

2008 ◽  
Vol 1 (1) ◽  
pp. 011701 ◽  
Author(s):  
Yujiro Hayashi ◽  
Kazunori Tanaka ◽  
Tatsushi Akazaki ◽  
Masafumi Jo ◽  
Hidekazu Kumano ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Light Emitting Diode ◽  
Cooper Pairs ◽  
Light Emitting ◽  
Recombination Processes

Radiative recombination processes in Al0.07Ga0.93N/GaN multiple quantum well structures, role of hole localisation

2004 ◽  
Vol 1 (10) ◽  
pp. 2500-2503 ◽  
Author(s):  
B. Monemar ◽  
H. Haratizadeh ◽  
P. P. Paskov ◽  
J. P. Bergman ◽  
E. Valcheva ◽  
...  
Keyword(s):  
Quantum Well ◽  
Radiative Recombination ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Recombination Processes

scholarly journals Cross Sections for Photoionization from Valence-Electron States

1958 ◽  
Vol 8 ◽  
pp. 992-993
Author(s):  
A. Burgess ◽  
M. J. Seaton
Keyword(s):  
Electron Temperature ◽  
Excited States ◽  
Cross Sections ◽  
Radiative Recombination ◽  
Valence Electron ◽  
Transition Probabilities ◽  
Electron States ◽  
Positive Ions ◽  
Gaseous Nebulae ◽  
Recombination Processes

In order to study recombination processes in gaseous nebulae, one requires the coefficients for radiative recombination to many excited states of neutral atoms and positive ions. These may be calculated as functions of electron temperature once the corresponding photoionization cross sections are known. For photoionization from valence-electron states a general formula has been obtained using a method which is an extension of that used by Bates and Damgaard for bound-bound transition probabilities.

Oxygen K near edge structures studied with multiple scattering calculations

1988 ◽  
Vol 46 ◽  
pp. 504-505
Author(s):  
Xudong Weng ◽  
Peter Rez
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Partial Cross Section ◽  
Energy Window ◽  
Edge Structure ◽  
Fine Structures ◽  
Hydrogenic Model ◽  
Electron Energy Loss ◽  
Quantitative Chemical

In electron energy loss spectroscopy, quantitative chemical microanalysis is performed by comparison of the intensity under a specific inner shell edge with the corresponding partial cross section. There are two commonly used models for calculations of atomic partial cross sections, the hydrogenic model and the Hartree-Slater model. Partial cross sections could also be measured from standards of known compositions. These partial cross sections are complicated by variations in the edge shapes, such as the near edge structure (ELNES) and extended fine structures (ELEXFS). The role of these solid state effects in the partial cross sections, and the transferability of the partial cross sections from material to material, has yet to be fully explored. In this work, we consider the oxygen K edge in several oxides as oxygen is present in many materials. Since the energy window of interest is in the range of 20-100 eV, we limit ourselves to the near edge structures.

An Study of Influence of Imperfections on the Delamination of Diamond-Like Carbon Films

2002 ◽  
Vol 719 ◽  
Author(s):  
Myoung-Woon Moon ◽  
Kyang-Ryel Lee ◽  
Jin-Won Chung ◽  
Kyu Hwan Oh
Keyword(s):  
Cross Sections ◽  
Focused Ion Beam ◽  
Imaging System ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Glass Substrates ◽  
Atomic Force ◽  
Initiation And Propagation

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.

scholarly journals Role of α-Cluster Transfer in the Formation of 20Ne + 16O Cross-Sections at Backward Angles

2021 ◽  
Vol 51 (3) ◽  
pp. 780-787
Author(s):  
Sh. Hamada ◽  
Nourhan M. Elmedalaa ◽  
I. Bondouk ◽  
N. Darwish ◽  
Awad A. Ibraheem
Keyword(s):  
Cross Sections ◽  
Cluster Transfer
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