In situ heating studies at high resolution

1991 ◽  
Vol 49 ◽  
pp. 656-657
Author(s):  
Robert Sinclair
Keyword(s):  
High Resolution ◽  
Structural Information ◽  
Direct Consequence ◽  
High Resolution Electron Microscopy ◽  
Spectroscopic Characterization ◽  
Characterization Methods ◽  
Intermediate Phases ◽  
Resolution Electron ◽  
Interfacial Defects

It is well-known that interfaces in solids have a crucial influence on the properties of materials. The structures of such interfaces are a direct consequence of their means of formation, be it by deposition, reaction, interdiffusion or epitaxial growth. Even subtle changes during processing or service can alter the anticipated behavior. High resolution electron microscopy (HREM) has become an invaluable, and virtually routine, characterization tool in understanding the influence of structure on properties. Its strength lies in the ability to derive direct structural information at the atomic level, not only about topography but also about interfacial defects such as dislocations or ledges, contamination residue, intermediate phases etc. It complements well the broad-beam spectroscopic characterization methods such as Auger, ECSA, SIMS and RBS, which do not provide structural information and can be ambiguous to interpret.

Atomic chemistry by HREM and image simulations?

1986 ◽  
Vol 44 ◽  
pp. 828-829
Author(s):  
J.M. Howe ◽  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Structural Information ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Image Simulations

The technique of high-resolution electron microscopy (HREM) is invaluable to the materials scientist because it allows examination of microstructural features at levels of resolution that are unobtainable by most other methods. Although the structural information which can be determined by HREM and accompanying image simulations has been well documented in the literature, there have only been a few cases where this technique has been used to reveal the chemistry of individual columns or planes of atoms, as occur in segregated and ordered materials.

Characterization of Tilt Boundaries by Ultra High Resolution Electron Microscopy

1984 ◽  
Vol 41 ◽  
Author(s):  
W. Krakow ◽  
J. T. Wetzel ◽  
D. A. Smith ◽  
G. Trafas
Keyword(s):  
High Resolution ◽  
Grain Boundary ◽  
Structural Information ◽  
Theoretical Work ◽  
High Resolution Electron Microscopy ◽  
Point Of View ◽  
Experimental Point ◽  
Structure Information ◽  
Resolution Electron ◽  
Tilt Boundaries

AbstractA high resolution electron microscope study of grain boundary structures in Au thin films has been undertaken from both a theoretical and experimental point of view. The criteria necessary to interpret images of tilt boundaries at the atomic level, which include electron optical and specimen effects, have been considered for both 200kV and the newer 400kV medium voltage microscopes. So far, the theoretical work has concentrated on two different [001] tilt bounda-ries where a resolution of 2.03Å is required to visualize bulk lattice structures on either side of the interface. Both a high angle boundary, (210) σ=5, and a low angle boundary, (910) σ=41, have been considered. Computational results using multislice dynamical diffraction and image simulations of relaxed bounda-ries viewed edge-on and with small amounts of beam and/or specimen inclina-tion have been obtained. It will be shown that some structural information concerning grain boundary dislocations can be observed at 200kV. However, many difficulties occur in the exact identification of the interface structure viewed experimentally for both [001] and [011] boundaries since the resolution required is near the performance limit of a 200kV microscope. The simulated results at 400kV indicate a considerable improvement will be realized in obtain-ing atomic structure information at the interface.

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