Development of Field Emission Electron Gun for High Resolution 100KV Electron Microscope

Author(s):  
T. Someya ◽  
T. Goto ◽  
Y. Harada ◽  
M. Watanabe

The field emission source is one of the most important factors to improve the image contrast in extremely high resolution electron microscopy since it provides high brightness, very small electron source and low energy spread of electrons. In scanning electron microscopy, although the field emission source has been proved to be advantageous in the range of relatively low accelerating voltages, those capable of operating at higher accelerating voltages are now in great demand in order to improve the resolving power up to 3Å or better. In the present work, we have developed a field emission electron gun which is used with an electron microscope of accelerating voltages up to 100KV.In this development, we first made efforts to improve the method of supplying high voltages in order to eliminate the surge influence on the field emission source which are easily destroyed by a high voltage surge produced by the discharge between electrodes constituting the electron gun.

1987 ◽  
Vol 111 ◽  
Author(s):  
D. R. Acosta ◽  
O. Guzman ◽  
P. Del Angel ◽  
J. Dominguez

High resolution electron microscopy has proven to be a powerful technique to determine structural characteristics of zeolites (l–2),symmetry variations and identification of several kind of defects.Together with ideal projected potential images, the microscopist usually finds in electron micrographs the influence of electro-optical parameters and alterations of the crystallinity of the material under electron irradiation. One of the purposes of this workis to contributetothe understanding of the degradation process of zeolites under electron irradiation in the electron microscope and in this way, discriminate when it is possible, what is reliable information recorded in the images obtained in high resolution conditions.


Author(s):  
R. Csencsits

High resolution electron microscopy (HREM) is a valuable technique for studying catalytic zeolite systems because it gives direct information about the structure and defects present in the structure. The difficulty with doing an HREM study on zeolites is that they become amorphous under electron irradiation. This work is a systematic investigation of the damage of Y zeolites in the transmission electron microscope (TEM); the goals of this study are to determine the mechanism for electron damage and to access the effects of damage in Y zeolites on their HREM images using computer simulation.


Author(s):  
A. Tonomura ◽  
T. Komoda

We have developed a field emission electron microscope. Although field emission gun requires ultra high vacuum and skillful technique, it brings about the favorable characteristics of high brightness and small energy spread. This characteristics will enable a significant progress in coherent electron optics and high resolution electron microscopy, especially in electron beam holography.Its column is Hitachi HU-11C Electron Microscope modified for ultra high vacuum operation, and it is evacuated with five ion pumps. Field emission gun is divided into two parts and is evacuated differentially with two ion pumps and a sublimation pump. The final pressures in these rooms are 5x10-10 Torr and 5x10-8 Torr respectively.


Author(s):  
Y. Ikuhara ◽  
P. Pirouz ◽  
A. H. Heuer ◽  
S. Yadavalli ◽  
C. P. Flynn

The interface structure between vanadium and the R-plane of sapphire (α-Al2O3) was studied by conventional and cross-sectional high resolution electron microscopy (HREM) to clarify the atomic structure of the interface.A 57 nm thick vanadium film was deposited on the (1102) (R) plane of sapphire by molecular beam epitaxy (MBE) at a substrate temperature of 920 K in a vacuum of 10-10torr. The HREM observations of the interface were done from three directions: two cross-sectional views (parallel to [0221]Al2O3 and [1120]Al2O3) and a plan view (parallel to [2201]Al2O3) by a top-entry JEOL 4000EX electron microscope (400 kV).


Author(s):  
R.A. Herring

TEM hollow cone illumination can produce high resolution images having atomic number (Z) contrast within a lattice image. Inorder to produce these images, the contribution of four sources of electrons should be considered. These are the main, inelastically scattered, elastically scattered, and diffracted beams. This abstract discusses these sources of electrons to the hollow cone (HC) image, and then goes further to propose a possible method of extending the resolution of the electron microscope by using diffracted HC beams to form holograms which should remove the limitation on resolution imposed by the objective lens and inelastically scattered electrons. A Philips EM 430T was used to take the electron micrographs.


Author(s):  
W. Coene ◽  
A.F. de Jong ◽  
H. Lichte ◽  
M. Op de Beeck ◽  
H. Tietz ◽  
...  

Several technological improvements in TEM have nowadays been realized which offer possibilities for ultra-high resolution electron microscopy at intermediate voltages. These improvements include new objective lens polepieces, field emission gun (FEG) TEMs and slow-scan CCD camera's. A project has been initiated for the period 1990-1994, for the development of ultra-HREM, which combines know-how both from industry (Philips, Tietz) and university (Antwerp, Tübingen, Delft, Arizona). The project is partly sponsored by the European Community (Brite-Euram program nr. 3322). The goal of the project is to achieve 0.1 nm structural resolution by using the information limit rather than the point resolution of the instrument. The information limit is extended towards the 0.1 nm range (at 300 kV) by the much better spatial and temporal coherence of the FEG as compared with LaB6 sources.


Author(s):  
T. Kizuka ◽  
N. Tanaka

Various kinds of nanometer scale processings are required to produce advanced materials, for example, nano-structured electric devices. Electron beam processing at nanometer scale using STEM and TEM, such as drilling and line-writing, is recently interested as a most useful method. Details of structural change during the processing should be elucidated at atomic resolution in order to establish the processing. In the present work we have processed lead telluride (PbTe) films with nanometer electron beam in a high-resolution transmission electron microscope and in-situ observed the variation of atomic arrangements during the processing.PbTe of 99.99% was vacuum-deposited on air-cleaved (001) surfaces of sodium chloride at room temperature. Time-resolved high-resolution electron microscopy was carried out at room temperature using a 200-kV electron microscope (JEOL, JEM2010) equipped with a high sensitive TV camera and a video tape recorder. The spatial resolution of thesystem was 0.2 nm at 200 kV and the time resolution was 1/60 s. Electron beam irradiation density was 120 A/cm2 at the processing and the observation.


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