Hardening effects of grain boundary defect structure

Author(s):  
Eswarahalli S. Venkatesh ◽  
L.E. Murr

The grain boundary defect structure can be changed to advantage by appropriate mechanical and thermal treatments. Researchers continue to show interest in understanding the effects of boundary defect structure on the mechanical properties of polycrystalline metals and alloys. Grain boundary structural features such as boundary ledges have been considered as a means of strengthening in metals and alloys. Considering the various models of Hall-Petch analyses, the grain boundary strength, σg can be expressed as σg = 8αGb(l-υ)m(L/ℓ); where m is the grain boundary ledge density, L is the grain size, ℓ is the distance of dislocation source in the adjacent grain matrix from the boundary, and G, b, and υ have the usual meaning. In particular, the influence of grain boundary ledge density on the strength (hardness) of grain boundaries is considered in the present paper.In the present investigation, pure (99.98%) nickel sheet mill (hot) rolled to 0.022 in. thick was used.

Author(s):  
Eswarahalli S. Venkatesh ◽  
L.E. Murr

In a recent paper1 it was shown that grain boundary ledge structure can be changed by appropriate thermomechanical treatments. Grain boundary ledges are sources of dislocations2. Recently the effects of grain boundaries on the mechanical properties in metals and alloys were studied3,4. For a few years now the structure and properties of grain boundaries and their control have been considered as a means of strengthening polycrystalline materials5,6. Li5 has derived a Hall-Petch type relation in terms of grain boundary dislocation source (ledge) density, m, in the form where L is the grain size, σ0 and α are constants, and G ana b have the usual meaning. The influence of grain boundary ledge density, on the flow stress is considered in this paper.In the present work, pure (99.98%) nickel sheet mill rolled (hot) to 0.022 in. thick was used.


Author(s):  
L. E. Murr

Many models of grain boundaries in metals and alloys have been developed in attempts to interpret their properties and observed structures. Because of the complexity of grain boundary structure, it is generally possible to apply any of the proposed models in any material, and to describe grain boundaries as possessing dislocation structures, ledges, protrusions, island structures, facets, coincidence regions which exhibit good atomic fit and establish a kind of superlattice array, and combinations of these structural features.The dislocation nature of small angle grain boundaries is well known, consisting of tilt or twist arrays or combinations of edge or screw dislocations.


1978 ◽  
Vol 33 (1) ◽  
pp. 69-80 ◽  
Author(s):  
Eswarahalli S. Venkatesh ◽  
Lawrence E. Murr

1988 ◽  
Vol 53 (21) ◽  
pp. 2105-2107 ◽  
Author(s):  
S. Nakahara ◽  
G. J. Fisanick ◽  
M. F. Yan ◽  
R. B. van Dover ◽  
T. Boone

Author(s):  
L.E. Murr

Ledges in grain boundaries can be identified by their characteristic contrast features (straight, black-white lines) distinct from those of lattice dislocations, for example1,2 [see Fig. 1(a) and (b)]. Simple contrast rules as pointed out by Murr and Venkatesh2, can be established so that ledges may be recognized with come confidence, and the number of ledges per unit length of grain boundary (referred to as the ledge density, m) measured by direct observations in the transmission electron microscope. Such measurements can then give rise to quantitative data which can be used to provide evidence for the influence of ledges on the physical and mechanical properties of materials.It has been shown that ledge density can be systematically altered in some metals by thermo-mechanical treatment3,4.


1996 ◽  
Vol 442 ◽  
Author(s):  
O.V. Astafiev ◽  
V.P. Kalinushkin ◽  
N.V. Abrosimov

AbstractMapping Low Angle Light Scattering method (MLALS) is proposed to study defect structure in materials used for solar cell production. Several types of defects are observed in Czochralski Si1−xGex (0.022<x<0.047) single crystals. Recombination activity of these defects is investigated. The possibility of contactless visualisation of grain boundary recombination in polysilicon is also demonstrated.


2016 ◽  
Vol 122 (9) ◽  
Author(s):  
Xiaojun Sun ◽  
Jianming Deng ◽  
Saisai Liu ◽  
Tianxiang Yan ◽  
Biaolin Peng ◽  
...  

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