Electron Channeling Analysis and Z-C0ntrast Imaging of Dopants in Semiconductors

1985 ◽  
Vol 43 ◽  
pp. 296-299
Author(s):  
S. J. Pennycook
Keyword(s):  
Crystal Structure ◽  
Layer Structure ◽  
Bragg Reflection ◽  
Analytical Techniques ◽  
Orientation Dependence ◽  
Lattice Location ◽  
Electron Channeling ◽  
Thermally Processed

The determination of dopant distribution and lattice location are key elements in the characterization of ion-implanted, thermally processed semiconductors. We present here two analytical techniques for this purpose. The first is a channeling technique for the determination of substitutional fractions of dopants or impurities in any crystal structure, and the second is a means for imaging and elemental mapping of heavy elements in light materials, even if they are in solution.Atom Location by Electron Channeling AnalysisIt has only recently been realized that the orientation dependence of characteristic x-ray emission close to a Bragg reflection, long regarded as a hindrance to accurate microanalysis, can form the basis of a powerful lattice location technique. The first studies of this kind located trace elements in layer structure minerals, where it was known that the only possible sites for the impurity lay within the layer planes A and/or B. These restraints exclude many materials and here a generalization to any crystal structure is described.

scholarly journals Comparison of Elemental Analysis Techniques for the Characterization of Commercial Alloys

Metals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 736
Author(s):  
Peter Seidel ◽  
Doreen Ebert ◽  
Robert Schinke ◽  
Robert Möckel ◽  
Simone Raatz ◽  
...  
Keyword(s):  
Accurate Determination ◽  
Analytical Techniques ◽  
Optical Emission ◽  
Breakdown Spectroscopy ◽  
General Evaluation ◽  
Sample Composition ◽  
Laser Induced Breakdown ◽  
Copper Aluminum

Better quality control for alloy manufacturing and sorting of post-consumer scraps relies heavily on the accurate determination of their chemical composition. In recent decades, analytical techniques, such as X-ray fluorescence spectroscopy (XRF), laser-induced breakdown spectroscopy (LIBS), and spark optical emission spectroscopy (spark-OES), found widespread use in the metal industry, though only a few studies were published about the comparison of these techniques for commercially available alloys. Hence, we conducted a study on the evaluation of four analytical techniques (energy-dispersive XRF, wavelength-dispersive XRF, LIBS, and spark-OES) for the determination of metal sample composition. It focuses on the quantitative analysis of nine commercial alloys, representing the three most important alloy classes: copper, aluminum, and steel. First, spark-OES is proven to serve as a validation technique in the use of certified alloy reference samples. Following an examination of the lateral homogeneity by XRF, the results of the techniques are compared, and reasons for deviations are discussed. Finally, a more general evaluation of each technique with its capabilities and limitations is given, taking operation-relevant parameters, such as measurement speed and calibration effort, into account. This study shall serve as a guide for the routine use of these methods in metal producing and recycling industries.

scholarly journals The preparation and characterization of SeCl3SbF6, improved syntheses of MCl3(As/Sb)F6 (M = S, Se), and the X-ray crystal structure determination of SeCl3AsF6 and a new phase of SBr3SbF6

1996 ◽  
Vol 74 (9) ◽  
pp. 1671-1681 ◽  
Author(s):  
Jack Passmore ◽  
Paul D. Boyle ◽  
Gabriele Schatte ◽  
Todd Way ◽  
T. Stanley Cameron
Keyword(s):  
Crystal Structure ◽  
Raman Spectroscopy ◽  
Crystal Structures ◽  
Monoclinic Space Group ◽  
X Ray ◽  
Ft Raman Spectroscopy ◽  
New Phase ◽  
Ft Raman

Alternative and, in some cases, improved syntheses of the salts MX3(As/Sb)F6 (M = S, Se) and SCl3(SbCl6/AlCl4) are described. In addition, the synthesis of SeCl3SbF6 is reported. The compounds were characterized by FT–Raman spectroscopy and the X-ray crystal structures of SeCl3AsF6 (also 77Se NMR) and a new phase of SBr3SbF6 were determined. Crystals of SeCl3AsF6 and SBr3SbF6 are monoclinic, space group P21/c with [values for SBr3SbF6 in brackets] a = 7.678(1) [8.137(1)] Å, b = 9.380(3) [9.583(2)] Å, c = 11.920(3) [12.447(2)] Å, β = 98.19(2)° [97.36(1)]°, V = 849.72(3) [962.6(3)] Å3,z = 4, Dx = 2.925 [3.502] Mg m−3, R = 0.0525 [0.055], and Rw = 0.0554 [0.060] for 1151 [1472] observed reflections. Key words: MX3+ salts, FT–Raman spectroscopy, X-ray crystal structures of SeCl3AsF6, SBr3SbF6, and preparation of SeCl3SbF6.

Synthesis and characterization of a disordered variant of KB5O7(OH)2

2015 ◽  
Vol 70 (9) ◽  
pp. 649-658 ◽  
Author(s):  
Teresa S. Ortner ◽  
Michael Schauperl ◽  
Klaus Wurst ◽  
Thomas S. Hofer ◽  
Hubert Huppertz
Keyword(s):  
Crystal Structure ◽  
Hydrothermal Synthesis ◽  
Single Crystal ◽  
Structure Determination ◽  
Molar Ratio ◽  
Potassium Cation ◽  
Synthesis And Characterization ◽  
Monoclinic Space Group

AbstractThe potassium pentaborate KB5O7(OH)2 reported herein crystallizes in the monoclinic space group P21/c (no. 14) with the lattice parameters a = 904.8(2), b = 753.2(2), c = 1214.9(5) pm, β = 117.16(2)°, and V = 0.73663(5) nm3 (Z = 4). It is a disordered structural variant of an already known compound with the same composition (a = 766.90(3), b = 904.45(3), c = 1223.04(4) pm, β = 119.132(2)°, and V = 0.74101(5) nm3 (Z = 4)) reported by Wu in 2011. The disorder of the potassium cation in the single crystal structure determination of KB5O7(OH)2 presented here leads to a remarkably elongated a axis and a corresponding reduction of the length of the b axis in comparison to the ordered compound. The disordered variant was obtained through a hydrothermal synthesis from KNO3, B2O3, and Ce(NO3)3·6H2O with a molar ratio of 1:1:0.07.

Structural characterization of a new high-pressure phase of GaAsO4

2006 ◽  
Vol 62 (6) ◽  
pp. 1019-1024 ◽  
Author(s):  
David Santamaría-Pérez ◽  
Julien Haines ◽  
Ulises Amador ◽  
Emilio Morán ◽  
Angel Vegas
Keyword(s):  
Crystal Structure ◽  
High Pressure ◽  
High Pressures ◽  
Ambient Conditions ◽  
Hexagonal Cell ◽  
Octahedral Sites ◽  
New Phase ◽  
Pressure Phase

As in SiO2 which, at high pressures, undergoes the α-quartz → stishovite transition, GaAsO4 transforms into a dirutile structure at 9 GPa and 1173 K. In 2002, a new GaAsO4 polymorph was found by quenching the compound from 6 GPa and 1273 K to ambient conditions. The powder diagram was indexed on the basis of a hexagonal cell (a = 8.2033, c = 4.3941 Å, V = 256.08 Å3), but the structure did not correspond to any known structure of other AXO4 compounds. We report here the ab initio crystal structure determination of this hexagonal polymorph from powder data. The new phase is isostructural to β-MnSb2O6 and it can be described as a lacunary derivative of NiAs with half the octahedral sites being vacant, but it also contains fragments of the rutile-like structure.

Electron Channeling Contrast Imaging for Beyond Silicon Materials Characterization

2018 ◽  
Author(s):  
Libor Strakos ◽  
Ondrej Machek ◽  
Tomas Vystavel ◽  
Andreas Schulze ◽  
Han Han ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
Defect Density ◽  
Analytical Techniques ◽  
Device Performance ◽  
Contrast Imaging ◽  
Large Area ◽  
Electron Channeling ◽  
Silicon Materials ◽  
Non Destructive

Abstract As semiconductor devices continue to shrink, novel materials (e.g. (Si)Ge, III/V) are being tested and incorporated to boost device performance. Such materials are difficult to grow on Si wafers without forming crystalline defects due to lattice mismatch. Such defects can decrease or compromise device performance. For this reason, non-destructive, high throughput and reliable analytical techniques are required. In this paper Electron Channeling Contrast Imaging (ECCI), large area mapping and defect detection using deep learning are combined in an analytical workflow for the characterization of the defectivity of “beyond Silicon” materials. Such a workflow addresses the requirements for large areas 10-4 cm2 with defect density down to 104 cm-2.

Structural characterization of copper complexes with chiral 1,2,4-triazine-oxazoline ligands

2016 ◽  
Vol 22 (5) ◽  
Author(s):  
Ewa Wolińska ◽  
Zbigniew Karczmarzyk ◽  
Waldemar Wysocki
Keyword(s):  
Crystal Structure ◽  
Structural Characterization ◽  
Structure Determination ◽  
Copper Complexes ◽  
Crystal Structure Determination ◽  
Oxazoline Ligands

AbstractThe crystal structure determination of oxazoline-1,2,4-triazine ligand

Sign in / Sign up

Export Citation Format

Share Document