Scanning Tunneling Microscopy of Amorphous Carbon Films

Author(s):  
Mircea Fotino ◽  
D.C. Parks

In the last few years scanning tunneling microscopy (STM) has made it possible and easily accessible to visualize surfaces of conducting specimens at the atomic scale. Such performance allows the detailed characterization of surface morphology in an increasing spectrum of applications in a wide variety of fields. Because the basic imaging process in STM differs fundamentally from its equivalent in other well-established microscopies, good understanding of the imaging mechanism in STM enables one to grasp the correct information content in STM images. It thus appears appropriate to explore by STM the structure of amorphous carbon films because they are used in many applications, in particular in the investigation of delicate biological specimens that may be altered through the preparation procedures.All STM images in the present study were obtained with the commercial instrument Nanoscope II (Digital Instruments, Inc., Santa Barbara, California). Since the importance of the scanning tip for image optimization and artifact reduction cannot be sufficiently emphasized, as stressed by early analyses of STM image formation, great attention has been directed toward adopting the most satisfactory tip geometry. The tips used here consisted either of mechanically sheared Pt/Ir wire (90:10, 0.010" diameter) or of etched W wire (0.030" diameter). The latter were eventually preferred after a two-step procedure for etching in NaOH was found to produce routinely tips with one or more short whiskers that are essentially rigid, uniform and sharp (Fig. 1) . Under these circumstances, atomic-resolution images of cleaved highly-ordered pyro-lytic graphite (HOPG) were reproducibly and readily attained as a standard criterion for easily recognizable and satisfactory performance (Fig. 2).

1992 ◽  
Vol 259 ◽  
Author(s):  
Hiroshi Tokumoto ◽  
Yukinori Morita ◽  
Kazushi Miki

ABSTRACTScanning tunneling microscopy (STM) was made in order to examine the surface structure and roughness in an atomic scale. The surfaces were prepared by several ways: NH4F (pH = 8) dipping just after RCA cleaning or after keeping in dry air for a few weeks; dipping into NH4F (pH = 8) solution or dipping into solutions with pH=10 just after boiling in HNO3. The STM images clearly showed that the surface structure and roughness are dependent on the sample treatments. The smooth surfaces with less defects were obtained for surfaces prepared by removing the HNO3-oxidized layer by NH4F (pH = 8) dipping.


Author(s):  
P.E. Russell ◽  
I.H. Musselman

Scanning tunneling microscopy (STM) has evolved rapidly in the past few years. Major developments have occurred in instrumentation, theory, and in a wide range of applications. In this paper, an overview of the application of STM and related techniques to polymers will be given, followed by a discussion of current research issues and prospects for future developments. The application of STM to polymers can be conveniently divided into the following subject areas: atomic scale imaging of uncoated polymer structures; topographic imaging and metrology of man-made polymer structures; and modification of polymer structures. Since many polymers are poor electrical conductors and hence unsuitable for use as a tunneling electrode, the related atomic force microscopy (AFM) technique which is capable of imaging both conductors and insulators has also been applied to polymers.The STM is well known for its high resolution capabilities in the x, y and z axes (Å in x andy and sub-Å in z). In addition to high resolution capabilities, the STM technique provides true three dimensional information in the constant current mode. In this mode, the STM tip is held at a fixed tunneling current (and a fixed bias voltage) and hence a fixed height above the sample surface while scanning across the sample surface.


2009 ◽  
Vol 603 (10-12) ◽  
pp. 1315-1327 ◽  
Author(s):  
F. Besenbacher ◽  
J.V. Lauritsen ◽  
T.R. Linderoth ◽  
E. Lægsgaard ◽  
R.T. Vang ◽  
...  

2000 ◽  
Vol 34 (2) ◽  
pp. 217-220 ◽  
Author(s):  
A. O. Golubok ◽  
O. M. Gorbenko ◽  
T. K. Zvonareva ◽  
S. A. Masalov ◽  
V. V. Rozanov ◽  
...  

2001 ◽  
Vol 86 (18) ◽  
pp. 4132-4135 ◽  
Author(s):  
D. Wortmann ◽  
S. Heinze ◽  
Ph. Kurz ◽  
G. Bihlmayer ◽  
S. Blügel

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