Secondary Electron Image Contrast in the Scanning Electron Microscope

Author(s):  
Hiroshi Suga ◽  
Takafumi Fujiwara ◽  
Nobuhiro Kanai ◽  
Masatoshi Kotera

An image contrast given in the scanning electron microscope(SEM) is due to differences in a detected number of secondary electrons (SE) coming from the specimen surface. The difference arises from the topographic, compositional and voltage features at the specimen surface. Two kinds of approaches have been taken for the quantification of SE images. One is to simulate electron trajectories in vacuum toward the detector, assuming the typical angular and energy distributions of electrons emitted from the specimen surface. However, the typical angular and energy distributions are not always applicable if a topographic or a compositional feature is present at the surface. The other is to simulate electron trajectory in the specimen. It is possible to obtain angular, energy, and spatial distributions of electrons emitted from the specimen surface. However, in order to discuss the SEM contrast based on these data, one has to assume that, for example, all slow electrons (<50eV) may be collected by the SE detector, or fast electrons ((>50eV) electrons may take a straight trajectory in the vacuum specimen chamber of the SEM. In a practical SEM picture of, for example, an etch-pit, different crystallographic plane surface shows different contrast even if the angle of the primary electron incidence toward all those surfaces is the same. This is because of the acceptance of the signal detection system. In a present study we combined two electron trajectory simulations mentioned above and calculated electron trajectories both in and out of the specimen, to simulate the trajectory from the point of the signal generated until the signal is detected.Although several simulation models of electron scatterings in a specimen have been reported to estimate the SE intensity at the surface, the model should be available to trace low energy (<50eV) electron trajectories. The model used here is basically the same as that reported in previous papers, and only a brief explanation is given in the following. Here, we made several assumptions as; [l]the energy loss of the primary and excited fast electrons is proportion to the number of SEs generated in the specimen, [2]the generated SE has an energy distribution as described by the Streitwolf equation, [3]the energy of the generated SEs are transferred to free electrons of the atom by the elastic-binary-collision, then one SE excited by the primary electron produces a ternary electron after the collision, and each one of the SE and the ternary electron produces higher order electrons in a cascade fashion. The simulation continues until the energy of each electron is less than the surface potential barrier. Angular and energy distributions and number of electrons emitted at the surface agree quite well with each experimental result in a typical case.

Author(s):  
K. Shibatomi ◽  
T. Yamanoto ◽  
H. Koike

In the observation of a thick specimen by means of a transmission electron microscope, the intensity of electrons passing through the objective lens aperture is greatly reduced. So that the image is almost invisible. In addition to this fact, it have been reported that a chromatic aberration causes the deterioration of the image contrast rather than that of the resolution. The scanning electron microscope is, however, capable of electrically amplifying the signal of the decreasing intensity, and also free from a chromatic aberration so that the deterioration of the image contrast due to the aberration can be prevented. The electrical improvement of the image quality can be carried out by using the fascionating features of the SEM, that is, the amplification of a weak in-put signal forming the image and the descriminating action of the heigh level signal of the background. This paper reports some of the experimental results about the thickness dependence of the observability and quality of the image in the case of the transmission SEM.


1998 ◽  
Vol 4 (S2) ◽  
pp. 182-183
Author(s):  
John F. Mansfield ◽  
Brett L. Pennington

The environmental scanning electron microscope (Environmental SEM) has proved to be a powerful tool in both materials science and the life sciences. Full characterization of materials in the environmental SEM often requires chemical analysis by X-ray energy dispersive spectroscopy (XEDS). However, the spatial resolution of the XEDS signal can be severely degraded by the gaseous environment in the sample chamber. At an operating pressure of 5Torr a significant fraction of the primary electron beam is scattered after it passes through the final pressure limiting aperture and before it strikes the sample. Bolon and Griffin have both published data that illustrates this effect very well. Bolon revealed that 45% of the primary electron beam was scattered by more than 25 μm in an Environmental SEM operating at an accelerating voltage of 30kV, with a water vapor pressure of 3Torr and a working distance of 15mm.


2019 ◽  
Vol 26 (4) ◽  
pp. 758-767 ◽  
Author(s):  
Yusuke Sakuda ◽  
Shunsuke Asahina ◽  
Takanari Togashi ◽  
Osamu Terasaki ◽  
Masato Kurihara

Abstract


2020 ◽  
Vol 14 (1) ◽  
pp. 59-65
Author(s):  
Masakazu Fujimoto ◽  
◽  
Yuka Hiraizumi ◽  
Kazutaka Hirata ◽  
Susumu Ohishi

This paper deals with the grinding energy distributions in wheel-workpiece contact zone and the wear behaviors of grain cutting edges in cBN deep grinding. By measuring the tangential grinding force distribution in the grinding zone, the grinding energy distribution form could be approximated to be triangular. However, the grinding energy distribution forms changed a little occurring workpiece burn. The wear behaviors of the grain cutting edges were observed by a Scanning Electron Microscope (SEM) and quantitatively evaluated in terms of attritious wear flat percentage. It is shown that the variation of the grinding energy distributions has an effect on the cutting edge wear characteristics.


1997 ◽  
Vol 3 (S2) ◽  
pp. 1207-1208
Author(s):  
John Mansfield

Full characterization of materials in the environmental scanning electron microscope (Environmental SEM) often requires chemical analysis by X-ray energy dispersive spectroscopy (XEDS). However, a major problem arises because the spatial resolution of the XEDS signal is severely degraded by the gaseous environment in the sample chamber. The significant fraction of the primary electron beam is scattered after it passes through the final pressure limiting aperture and before it strikes the sample. Bolon and Griffin have both published data that illustrates this effect very well. Bolon revealed that 45% of the primary electron beam was scattered by more than 25μm in an Environmental SEM operating at an accelerating voltage of 30kV, with a water vapor pressure of 3Torr and a working distance of 15mm. Griffin’s work demonstrated that even at higher voltages (30 kV), shorter working distances (<10mm) and lower chamber pressures (2Torr), there is a significant fraction of the electron beam scattered out to over 400 μm away from the point where the primary beam strikes the sample.


2001 ◽  
Vol 7 (S2) ◽  
pp. 788-789
Author(s):  
S.W. Morgan ◽  
M.R. Phillips

The Environmental Scanning Electron Microscope (ESEM) is capable of image generation in a gaseous environment at sample chamber pressures of up to 20 torr. in an ESEM, low energy secondary electrons emitted from a sample surface, by virtue of the primary electron beam, are accelerated towards the positively biased metallic ring (typically +30 to +550V) Gaseous Secondary Electron Detector (GSED). As these electrons accelerate towards the ring they undergo ionizing collisions with gas molecules producing positive ions and additional electrons known as environmental secondary electrons. The environmental electrons further ionize the gas on their way to the ring producing a cascade amplification of the original signal. The amplified signal induced in the ring is used to form an image. The electric field generated between the GSED ring and the grounded stage causes the positive ions produced in the cascade to drift towards the sample, effectively neutralizing negative charge build up on the surface of a non-conducting sample.


2011 ◽  
Vol 311-313 ◽  
pp. 498-501
Author(s):  
Jun Peng Wang ◽  
Chun Hua Xu ◽  
Xiang Li Li ◽  
San Qiang Shi

Commercial Cu0.62Zn0.38foil was subjected to surface mechanical attrition treatment (SMAT) processing. The original and SMAT Cu0.62Zn0.38foils are thermally oxidized at 500°C under N2-5%O2gas environments, at a pressure of 1 atm for 3 hours. The oxidized specimens were characterized with a scanning electron microscope, an X-ray diffractometer. It is found that nanosheets are easily formed on the SMAT specimen surface. The favorable formation of nanosheets relates to twin–matrix lamellae structure.


Author(s):  
W. Krakow ◽  
W. C. Nixon

Charging effects in the scanning electron microscope (SEM) have been investigated and various contrast mechanisms have been explained which include both the primary beam and secondary electron trajectories and take into account specimen parameters. In particular, Weitzenkamp measured potentials of cylindrical fibers which could be suspended above a replica of a ruled surface to measure charge density on these organic polymer materials.We have been able to obtain the equivalent information on the charge density from SEM micrographs of small charged particles. Fig. 1, shows a backseattered electron image of a 10μm polystyrene particle supported on a gold coated linear hologram grating having spacing of approximately 3.6μm. The grating distortion indicates a strong negative charge on the particle which deflects the 10 kV primary beam. The grating distortion is asynmetric due to a specimen tilt of 70 degrees.


Author(s):  
M. T. Postek

The basic premise underlying the use of the scanning electron microscope (SEM) for linewidth measurement for semiconductor research and production applications is that the video image acquired, displayed, and ultimately measured reflects accurately the structure of interest. It should be understood that not all the secondary electrons detected originate at the point of impact with the primary electron beam. Those that do are referred to as Type I electrons. Some of the signal is contributed by re-emergent backscattered electrons creating secondary electrons at the surface of the sample (Type II electrons) and at the final lens polepiece (Type III electrons). Other signal contributions include line-of-sight backscattered electrons and other sources particular to each instrument (Type IV electrons). The effects of these four types of contributions to the actual image or linewidth measurement have not been fully evaluated. In measurement applications, error due to the actual location of signal origination will not affect pitch measurements as the errors cancel. However, in linewidth measurement, the errors are additive and thus give twice the edge detection error to the measured width. The basic intent of this work is to demonstrate the magnitude of these errors relative to the mode of signal detection at a variety of beam acceleration voltages.


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