High Resolution Transmission Electron Microscopy and Atomic Force Microscopy Study of Nanocrystalline Ferrites Synthesized by Reverse Micelle Technique Under Varied Conditions

2004 ◽  
Vol 10 (S02) ◽  
pp. 402-403
Author(s):  
Harish Nathani ◽  
R. D. K Misra
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
High Resolution ◽  
Reverse Micelle ◽  
Microscopy Study ◽  
Atomic Force Microscopy Study ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

scholarly journals Taking Correlative Microscopy to a New Level

2003 ◽  
Vol 11 (4) ◽  
pp. 3-7
Author(s):  
Stephen W. Carmichael
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
High Resolution ◽  
Light Microscopy ◽  
Wide Angle ◽  
Correlative Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

We are all familiar with the concept of correlating an image acquired by light microscopy (LM) with one obtained by transmission electron microscopy (TEM). This allows us to take advantage of the “wide angle” view of LM and the high resolution of TEM. Correlative microscopy has been taken to a new level by Alvin Lin and Cynthia Goh who have designed a clever device. This device allows repetitive correlative microscopy between TEM and atomic force microscopy (AFM).

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

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