Local Lattice Parameter Determination of Strained Areas of Semiconductors Using CBED

2004 ◽  
Vol 10 (S02) ◽  
pp. 310-311
Author(s):  
Takayuki Akaogi ◽  
Kenji Tsuda ◽  
Masami Terauchi ◽  
Michiyoshi Tanaka

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

1976 ◽  
Vol 19 (4) ◽  
pp. 335-339 ◽  
Author(s):  
R. Heckingbottom ◽  
M.A.G. Halliwell ◽  
J.F.C. Baker ◽  
M. Hart

1989 ◽  
Vol 24 (4) ◽  
pp. 437-441 ◽  
Author(s):  
H. Berger ◽  
B. Rosner ◽  
D. Schikora

1986 ◽  
Vol 30 ◽  
pp. 373-382 ◽  
Author(s):  
W. Parrish ◽  
M. Hart ◽  
T. C Huang ◽  
M. Bellotto

AbstractA method for using synchrotron-radiation parallel-beam X-ray diffractometry for precision measurement of scattering angles and lattice parameters is described. The important advantages of the method are the high P/B made possible by wavelength selection and high source intensity, the symmetrical profiles and the absence of most systematic errors making it unnecessary to use standards. Profile fitting with a pseudo-Voigt function is used to determine 2θ to 0.0001º. The zero-angle correction and lattice parameter were determined from least-squares refinement and the average accuracy of observed-calculated 2θs was 0.0020°. Average values of ∆d/d = ∆a/a directly calculated from the individual hkl measurements ranged from 2x 10-5 to 5.7 x 10-5. The precision estimated from the standard deviation of the mean is in the 10-6 range and 1 ppm precision was obtained for Si. The determination of the exact wavelength selected remains to be solved, but ratios of lattice spacings to standards such as NBS SRM 640a can be determined.


1983 ◽  
Vol 18 (1) ◽  
pp. K28-K30 ◽  
Author(s):  
S. Grosswig ◽  
W. Melle ◽  
U. Schellenberger ◽  
W. Zahorowski

2012 ◽  
Vol 68 (1) ◽  
pp. 8-14 ◽  
Author(s):  
Martin Schmidbauer ◽  
Albert Kwasniewski ◽  
Jutta Schwarzkopf

The lattice parameters of three perovskite-related oxides have been measured with high precision at room temperature. An accuracy of the order of 10−5 has been achieved by applying a sophisticated high-resolution X-ray diffraction technique which is based on the modified Bond method. The results on cubic SrTiO3 [a = 3.905268 (98) Å], orthorhombic DyScO3 [a = 5.442417 (54), b = 5.719357 (52) and c = 7.904326 (98) Å], and orthorhombic NdGaO3 [a = 5.428410 (54), b = 5.498407 (55) and c = 7.708878 (95) Å] are discussed in view of possible systematic errors as well as non-stoichiometry in the crystals.


1983 ◽  
Vol 18 (4) ◽  
pp. 501-511 ◽  
Author(s):  
S. Grosswig ◽  
J. Härtwig ◽  
U. Alter ◽  
A. Christoph

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