Anomalous in-plane lattice thermal conductivity in an atomically thin two-dimensional α-GeTe layer

The bilayer α-GeTe displayed an exceptionally low lattice thermal conductivity never reported in the atomically thin 2D materials.

Ultralow cross-plane lattice thermal conductivity caused by Bi–O/Bi–O interfaces in natural superlattice-like single crystals

Revealing the impact of Bi–O/Bi–O interfaces with van der Waals interactions on the formation of ultralow cross-plane lattice thermal conductivity.

Chirped Superlattices as Adjustable Strain Platforms for Metamorphic Semiconductor Devices

Chirped superlattices are of interest as buffer layers in metamorphic semiconductor device structures, because they can combine the mismatch accommodating properties of compositionally-graded layers with the dislocation filtering properties of superlattices. Important practical aspects of the chirped superlattice as a buffer layer are the surface strain and surface in-plane lattice constant. In this work two basic types of InGaAs/GaAs chirped superlattice buffers have been studied. In design I (composition modulated), the average composition is varied by modulating the composition of one of the two layers in the superlattice period, but the individual layer thicknesses were fixed. In design II (thickness modulated), the individual layer thicknesses were modulated, but the compositions were fixed. In this paper the surface strain and surface in-plane lattice constant for these chirped superlattices are presented as functions of the top composition and period for each of these basic designs.