scholarly journals In-situ TEM Investigation of the Amorphous to Crystalline Phase Change During Electrical Breakdown of Highly Conductive Polymers at the Atomic Scale

2020 ◽  
Vol 26 (S2) ◽  
pp. 3198-3200
Author(s):  
Michele Conroy ◽  
Kalani Moore ◽  
Rob Lehane ◽  
Alonso Gamero-Quijano ◽  
Micheal Scanlon ◽  
...  
Nanoscale ◽  
2017 ◽  
Vol 9 (19) ◽  
pp. 6327-6333 ◽  
Author(s):  
Dejiong Zhang ◽  
Chuanhong Jin ◽  
He Tian ◽  
Yalin Xiong ◽  
Hui Zhang ◽  
...  

An In situ atomic scale study of the surface oxidation of Pd nanocrystals.


2020 ◽  
Vol 174 ◽  
pp. 108808 ◽  
Author(s):  
Y.T. Zhou ◽  
Y.N. Zan ◽  
Q.Z. Wang ◽  
B.L. Xiao ◽  
Z.Y. Ma ◽  
...  

2017 ◽  
Vol 24 (4) ◽  
pp. 2045-2049 ◽  
Author(s):  
Xiao Zhang ◽  
Yang Yang ◽  
Fangfang Xu ◽  
Tie Li ◽  
Yuelin Wang

2000 ◽  
Vol 72 (1-2) ◽  
pp. 209-219 ◽  
Author(s):  
Z. L. Wang ◽  
P. Poncharal ◽  
W. A. de Heer

Property characterization of nanomaterials is challenged by the small size of the structure because of the difficulties in manipulation. Here we demonstrate a novel approach that allows a direct measurement of the mechanical and electrical properties of individual nanotube-like structures by in situ transmission electron microscopy (TEM). The technique is powerful in a way that it can be directly correlated to the atomic-scale microstructure of the carbon nanotube with its physical properties, thus providing a complete characterization of the nanotube. Applications of the technique will be demonstrated in measurements of the mechanical properties, the electron field emission, and the ballistic quantum conductance of individual carbon nanotubes. A nanobalance technique is demonstrated that can be applied to measure the mass of a single tiny particle as light as 22 fg (1 f = 10-15 ).


2020 ◽  
Vol 2 (9) ◽  
pp. 3841-3848
Author(s):  
Sang Ho Oh ◽  
Kyungjoon Baek ◽  
Sung Kyu Son ◽  
Kyung Song ◽  
Jang Won Oh ◽  
...  

Void formation and migration that drive the device failure of Ge2Sb2Te5 (GST)-based practical devices were revealed via in situ TEM.


Author(s):  
Sungkyu Son ◽  
Seungjoon Jeon ◽  
Jangwon Oh ◽  
Won Kim ◽  
Hojoung Kim ◽  
...  

Abstract It is important to understand the switching mechanism of phase change material for failure analysis of PRAM device. In this study, the real time observations of phase transition and void formation mechanism of confined GST structure were investigated using in-situ TEM with multi-pulse AC biasing technique. In-situ SET switching behavior between amorphous state and crystalline state with continuous structural change was successfully observed. Volume shrink of GST, due to the phase transition, induced voids at grain boundary of crystalline phase. Excess Joule-heating after crystallization caused coalescence and migration of voids. These results may give us a crucial clue for endurance failure analysis of PRAM.


2009 ◽  
Vol 44 (8) ◽  
pp. 1965-1968 ◽  
Author(s):  
C. L. Chen ◽  
T. Nagase ◽  
H. Mori
Keyword(s):  

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