Use of Pt Markers in the Study of Solid-State Reactions in the Presence of an Electric Field

1998 ◽  
Vol 4 (2) ◽  
pp. 158-163 ◽  
Author(s):  
Matthew T. Johnson ◽  
Shelley R. Gilliss ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Electric Field ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Solid State Reactions ◽  
Single Crystal Substrate ◽  
Fine Scale ◽  
Initial Location ◽  
Crystal Substrate

The use of Pt to mark the initial location of heterophase boundaries in solid-state reactions was extended to investigate the motion of interfaces during a thin-film solid-state reaction between In2O3 and MgO in the presence of an electric field. The Pt markers were prepared by sputtering a thin Pt film onto a single-crystal substrate. The resulting multilayer was then heated prior to thin-film deposition to de-wet the Pt film and thus form an array of small, isolated particles. These particles serve as fine-scale markers for tracking the motion of interfaces. However, there are certain situations in which the markers can move with the interface.

Challenges regarding thin film deposition of garnet electrolytes for all-solid-state lithium batteries with high energy density

Ionics ◽  
2018 ◽  
Vol 24 (8) ◽  
pp. 2199-2208 ◽  
Author(s):  
S. Lobe ◽  
C. Dellen ◽  
A. Windmüller ◽  
C.-L. Tsai ◽  
F. Vondahlen ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Energy Density ◽  
Lithium Batteries ◽  
Thin Film Deposition ◽  
High Energy ◽  
Film Deposition ◽  
High Energy Density

Texture Effects in Solid-State Reactions of Thin Films

2012 ◽  
Vol 706-709 ◽  
pp. 2857-2862 ◽  
Author(s):  
Koen De Keyser ◽  
Christophe Detavernier ◽  
Jean Jordan Sweet ◽  
Christian Lavoie
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Single Crystal ◽  
Phase Formation ◽  
Metal Film ◽  
Solid State Reactions ◽  
Single Crystal Substrate ◽  
Crystal Substrate ◽  
Semiconductor Single Crystal ◽  
Deposited Film

The texture of thin films, originating from a solid state reaction between a deposited film and a single crystal substrate is investigated. The relation between the phase formation and texture is analyzed for a number of these systems, such as Co/Si, Ni/Si or Co/Ge, where a metal film is allowed to react with a semiconductor single crystal substrate during heating and a summary of these results in presented in this article. It was found that the texture of the resulting films can be very complex, consisting of a variety of simultaneously occurring texture components such as epitaxy, fiber and axiotaxy texture. The close connection between the phase formation and texture is demonstrated by the fact that even a small intervention in either one, can have a huge effect on the resulting phase and/or its texture. From this, we show that the effect of the addition of ternary elements (e.g. Pt, W, C) to the thin films can only be understood if one considers its effects on both the kinetics and the thermodynamics of the reactions, as well as on the texture of the phases. We show how this can be used to influence technologically important properties of the films, such of formation temperature or stability.

A new approach to the study of solid-state reactions in oxide ceramics

1994 ◽  
Vol 52 ◽  
pp. 520-521
Author(s):  
Paul G. Kotula
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Single Crystal ◽  
Buffer Layers ◽  
Oxide Thin Film ◽  
Solid State Reactions ◽  
Single Crystal Substrate ◽  
Oxide Ceramics ◽  
Intimate Contact ◽  
Reaction Bonding

Thin-film reactions have potential applications for the production of buffer layers in heterojunctions and for the reaction bonding of materials. The main drawback to these applications at present isthat the effect of interface morphology on the initial kinetics of solid-state reactions is not well understood. In order to study the kinetics and mechanisms of thin-film reactions in oxide ceramics, a new method has been developed. The approach relies on the production of a well characterized high-quality oxide thin film on a single-crystal oxide substrate which makes up the idealized reaction couple-a ‘single-crystal’ thin film in intimate contact with a single crystal substrate. The thin-film approach localizes the reaction near the surface of the specimen so that conventional cross-sectioning techniques can be utilized. Additionally, the scale of the reaction is of the order of tens of nanometers or less which is ideally suited to high-resolution SEM or conventional TEM.NiO/α-Al2O3 is a model system for the study of solid-state reactions.

scholarly journals A stochastic model of solid state thin film deposition: Application to chalcopyrite growth

AIP Advances ◽  
2016 ◽  
Vol 6 (4) ◽  
pp. 045015 ◽  
Author(s):  
Robert J. Lovelett ◽  
Xueqi Pang ◽  
Tyler M. Roberts ◽  
William N. Shafarman ◽  
Robert W. Birkmire ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Stochastic Model ◽  
Thin Film Deposition ◽  
Film Deposition

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

CVD copper thin film deposition using (α-methylstyrene)Cu(I)(hfac)

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-553-Pr3-560 ◽  
Author(s):  
W. Zhuang ◽  
L. J. Charneski ◽  
D. R. Evans ◽  
S. T. Hsu ◽  
Z. Tang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Copper Thin Film
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