Texture Effects in Solid-State Reactions of Thin Films

2012 ◽  
Vol 706-709 ◽  
pp. 2857-2862 ◽  
Author(s):  
Koen De Keyser ◽  
Christophe Detavernier ◽  
Jean Jordan Sweet ◽  
Christian Lavoie

The texture of thin films, originating from a solid state reaction between a deposited film and a single crystal substrate is investigated. The relation between the phase formation and texture is analyzed for a number of these systems, such as Co/Si, Ni/Si or Co/Ge, where a metal film is allowed to react with a semiconductor single crystal substrate during heating and a summary of these results in presented in this article. It was found that the texture of the resulting films can be very complex, consisting of a variety of simultaneously occurring texture components such as epitaxy, fiber and axiotaxy texture. The close connection between the phase formation and texture is demonstrated by the fact that even a small intervention in either one, can have a huge effect on the resulting phase and/or its texture. From this, we show that the effect of the addition of ternary elements (e.g. Pt, W, C) to the thin films can only be understood if one considers its effects on both the kinetics and the thermodynamics of the reactions, as well as on the texture of the phases. We show how this can be used to influence technologically important properties of the films, such of formation temperature or stability.

2006 ◽  
Vol 89 (23) ◽  
pp. 232906 ◽  
Author(s):  
X. Y. Zhou ◽  
T. Heindl ◽  
G. K. H. Pang ◽  
J. Miao ◽  
R. K. Zheng ◽  
...  

1991 ◽  
Vol 249 ◽  
Author(s):  
Gabriel Braunstein ◽  
Gustavo R. Paz-Pujalt

ABSTRACTWe demonstrate the homoepitaxial growth of SrTiO3 prepared by the method of metallo-organic decomposition (MOD). Thin films of SrTiO3 are prepared by spin-coating and thermal decomposition of a solution of metallo-organic compounds, on single crystal, <100> oriented, SrTiO3 substrates and subsequently heat treated at temperatures ranging from 650°C to 1100°C for 30 minutes. Heat treatment at 1100°C results in the formation of single-crystal SrTiO3, perfectly aligned with respect to the underlying substrate.Ion-channeling analysis shows that the transformation to singlecrystal material proceeds epitaxially from the coating-substrate interface towards the surface of the sample. Transmission electron microscopy (TEM) studies of partially regrown samples reveal two distinct phases: an epitaxially aligned single-crystal phase, adjacent to the substrate, and a polycrystalline phase on top. On the basis of these observations, it is proposed that the crystallization of the MOD films involves the competition between two processes: layer-by-layer solid phase epitaxy and random nucleation and growth of crystallites. Layerby- layer epitaxy is the predominant crystallization mechanism unless it is inhibited by extrinsic factors like the contamination of the interface between the MOD film and the single-crystal substrate.


2005 ◽  
Vol 86 (21) ◽  
pp. 212904 ◽  
Author(s):  
D. Y. Wang ◽  
Y. Wang ◽  
X. Y. Zhou ◽  
H. L. W. Chan ◽  
C. L. Choy

2014 ◽  
Vol 50 (11) ◽  
pp. 1-4 ◽  
Author(s):  
Mitsuru Ohtake ◽  
Daisuke Suzuki ◽  
Masaaki Futamoto ◽  
Fumiyoshi Kirino ◽  
Nobuyuki Inaba

1998 ◽  
Vol 4 (2) ◽  
pp. 158-163 ◽  
Author(s):  
Matthew T. Johnson ◽  
Shelley R. Gilliss ◽  
C. Barry Carter

The use of Pt to mark the initial location of heterophase boundaries in solid-state reactions was extended to investigate the motion of interfaces during a thin-film solid-state reaction between In2O3 and MgO in the presence of an electric field. The Pt markers were prepared by sputtering a thin Pt film onto a single-crystal substrate. The resulting multilayer was then heated prior to thin-film deposition to de-wet the Pt film and thus form an array of small, isolated particles. These particles serve as fine-scale markers for tracking the motion of interfaces. However, there are certain situations in which the markers can move with the interface.


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