GaN devices for communication applications: evolution of amplifier architectures
2010 ◽
Vol 2
(1)
◽
pp. 85-93
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Keyword(s):
Class Ab
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This paper presents the design and implementation of power amplifiers using high-power gallium nitride (GaN) high electronic mobility transistor (HEMT) powerbars and monolithic microwave integrated circuits (MMICs). The first amplifier is a class AB implementation for worldwide interoperability for microwave access (WiMAX) applications with emphasis on a low temperature cofired ceramics (LTCC) packaging solution. The second amplifier is a class S power amplifier using a high power GaN HEMT MMIC. For a 450 MHz continuous wave (CW) signal, the measured output power is 5.8 W and drain efficiency is 18.5%. Based on time domain simulations, loss mechanisms are identified and optimization steps are discussed.
1998 ◽
Vol 37
(Part 1, No. 4A)
◽
pp. 1960-1963
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1996 ◽
Vol 54
◽
pp. 944-945
1987 ◽
Vol 35
(12)
◽
pp. 1176-1182
◽