Focused, rasterable, high-energy neutral molecular beam probe for secondary ion mass spectrometry

High Energy ◽

Ion Mass Spectrometry ◽

The mechanism of simultaneous implantation and sputtering by high energy oxygen ions during secondary ion mass spectrometry (SIMS) analysis

Surface Science ◽

10.1016/0039-6028(74)90105-8 ◽

1974 ◽

Vol 44 (1) ◽

pp. 247-252 ◽

Cited By ~ 58

Author(s):

J.C.C. Tsai ◽

J.M. Morabito

Keyword(s):

Mass Spectrometry ◽

High Energy ◽

Oxygen Ions ◽

Ion Mass Spectrometry ◽

Sims Analysis ◽

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

Surface analysis with high energy time-of-flight secondary ion mass spectrometry measured in parallel with PIXE and RBS

10.1016/j.nimb.2010.02.045 ◽

2010 ◽

Vol 268 (11-12) ◽

pp. 1714-1717 ◽

Cited By ~ 18

Author(s):

Brian N. Jones ◽

Vladimir Palitsin ◽

Roger Webb

Keyword(s):

Mass Spectrometry ◽

Surface Analysis ◽

Time Of Flight ◽

High Energy ◽

Ion Mass Spectrometry ◽

Pixe And Rbs ◽

Secondary‐ion mass spectrometry on δ‐doped GaAs grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.104026 ◽

1990 ◽

Vol 57 (17) ◽

pp. 1799-1801 ◽

Cited By ~ 28

Author(s):

E. F. Schubert ◽

H. S. Luftman ◽

R. F. Kopf ◽

R. L. Headrick ◽

J. M. Kuo

Keyword(s):

Mass Spectrometry ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Ion Mass Spectrometry ◽

Sn incorporation into InP grown by molecular beam epitaxy: A secondary‐ion mass spectrometry study

Applied Physics Letters ◽

10.1063/1.102947 ◽

1990 ◽

Vol 56 (23) ◽

pp. 2301-2303 ◽

Cited By ~ 14

Author(s):

M. B. Panish ◽

R. A. Hamm ◽

L. C. Hopkins

Keyword(s):

Mass Spectrometry ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Mass Spectrometry Study ◽

Ion Mass Spectrometry ◽

Molecular beam static secondary ion mass spectrometry for surface analysis

10.1117/12.206432 ◽

1995 ◽

Author(s):

Anthony D. Appelhans ◽

Gary S. Groenewold ◽

Jani C. Ingram ◽

D. A. Dahl ◽

J. E. Delmore

Keyword(s):

Mass Spectrometry ◽

Surface Analysis ◽

Molecular Beam ◽

Ion Mass Spectrometry ◽

Detection of lithium in scalp hair by time-of-flight secondary ion mass spectrometry with high energy (MeV) primary ions

Analytical Methods ◽

10.1039/c7ay01616f ◽

2017 ◽

Vol 9 (36) ◽

pp. 5249-5253 ◽

Cited By ~ 5

Author(s):

Karen J. Cloete ◽

Boštjan Jenčič ◽

Žiga Šmit ◽

Mitja Kelemen ◽

Kwezikazi Mkentane ◽

...

Keyword(s):

Mass Spectrometry ◽

Scalp Hair ◽

Time Of Flight ◽

High Energy ◽

Ion Mass Spectrometry ◽

Primary Ions ◽

The application of MeV-SIMS is presented for the detection and mapping of lithium in chemically unprocessed, longitudinally sectioned scalp hair.

High Energy and Angular Resolution Dynamic Secondary Ion Mass Spectrometry

Microbeam and Nanobeam Analysis ◽

10.1007/978-3-7091-6555-3_31 ◽

1996 ◽

pp. 391-398

Author(s):

Alexandr A. Kosyachkov

Keyword(s):

Mass Spectrometry ◽

Angular Resolution ◽

High Energy ◽

Ion Mass Spectrometry ◽

Enhanced Ion Yields Using High Energy Water Cluster Beams for Secondary Ion Mass Spectrometry Analysis and Imaging

Analytical Chemistry ◽

10.1021/acs.analchem.9b01390 ◽

2019 ◽

Vol 91 (14) ◽

pp. 9058-9068 ◽

Cited By ~ 1

Author(s):

Sadia Sheraz ◽

Hua Tian ◽

John C. Vickerman ◽

Paul Blenkinsopp ◽

Nicholas Winograd ◽

...

Keyword(s):

Mass Spectrometry ◽

Water Cluster ◽

High Energy ◽

Mass Spectrometry Analysis ◽

Spectrometry Analysis ◽

Ion Mass Spectrometry ◽

Ion Yields ◽

Cluster Beams ◽

Detection of oxygen incorporated in molecular‐beam epitaxy grown GaAs‐on‐AlAs interfaces and AlAs layers by secondary ion mass spectrometry

Applied Physics Letters ◽

10.1063/1.110650 ◽

1993 ◽

Vol 63 (14) ◽

pp. 1924-1926 ◽

Cited By ~ 11

Author(s):

T. Someya ◽

H. Akiyama ◽

Y. Kadoya ◽

T. Noda ◽

T. Matsusue ◽

...

Keyword(s):

Mass Spectrometry ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Ion Mass Spectrometry ◽

Corrigendum to’ X-ray diffraction and secondary ion mass spectrometry investigations of GaN films grown on (0 0 1) and (1 1 0) MgF2 substrates by plasma-assisted molecular beam epitaxy (PA-MBE)’. Materials science in semiconductor processing 119 (2020) 105,262

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2020.105544 ◽

2021 ◽

Vol 122 ◽

pp. 105544

Author(s):

Kevin Meyer ◽

Martin Buchholz ◽

Daniel Uxa ◽

Lars Dörrer ◽

Harald Schmidt ◽

...

Keyword(s):

Mass Spectrometry ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Materials Science ◽

X Ray Diffraction ◽

Semiconductor Processing ◽

X Ray ◽

Ion Mass Spectrometry ◽