Sn incorporation into InP grown by molecular beam epitaxy: A secondary‐ion mass spectrometry study

Applied Physics Letters ◽

10.1063/1.102947 ◽

1990 ◽

Vol 56 (23) ◽

pp. 2301-2303 ◽

Author(s):

M. B. Panish ◽

R. A. Hamm ◽

L. C. Hopkins

Keyword(s):

Mass Spectrometry ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Secondary Ion Mass Spectrometry ◽

Mass Spectrometry Study ◽

Ion Mass Spectrometry ◽

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Secondary ion mass spectrometry study of lightly dopedp‐type GaAs films grown by molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.331193 ◽

1982 ◽

Vol 53 (6) ◽

pp. 4518-4520 ◽

Author(s):

J. B. Clegg ◽

C. T. Foxon ◽

G. Weimann

Keyword(s):

Mass Spectrometry ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Secondary Ion Mass Spectrometry ◽

Mass Spectrometry Study ◽

Ion Mass Spectrometry ◽

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Secondary ion mass spectrometry study of oxygen accumulation at GaAs/AlGaAs interfaces grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.97730 ◽

1987 ◽

Vol 50 (24) ◽

pp. 1730-1732 ◽

Author(s):

T. Achtnich ◽

G. Burri ◽

M. A. Py ◽

M. Ilegems

Keyword(s):

Mass Spectrometry ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Secondary Ion Mass Spectrometry ◽

Mass Spectrometry Study ◽

Ion Mass Spectrometry ◽

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Secondary ion mass spectrometry study of lightly doped P-type GaAs films grown by molecular beam epitaxy

Vacuum ◽

10.1016/0042-207x(83)90240-3 ◽

1983 ◽

Vol 33 (6) ◽

pp. 357

Keyword(s):

Mass Spectrometry ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Secondary Ion Mass Spectrometry ◽

Mass Spectrometry Study ◽

Ion Mass Spectrometry ◽

P Type ◽

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Secondary‐ion mass spectrometry on δ‐doped GaAs grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.104026 ◽

1990 ◽

Vol 57 (17) ◽

pp. 1799-1801 ◽

Author(s):

E. F. Schubert ◽

H. S. Luftman ◽

R. F. Kopf ◽

R. L. Headrick ◽

J. M. Kuo

Keyword(s):

Mass Spectrometry ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Secondary Ion Mass Spectrometry ◽

Ion Mass Spectrometry ◽

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Detection of oxygen incorporated in molecular‐beam epitaxy grown GaAs‐on‐AlAs interfaces and AlAs layers by secondary ion mass spectrometry

Applied Physics Letters ◽

10.1063/1.110650 ◽

1993 ◽

Vol 63 (14) ◽

pp. 1924-1926 ◽

Author(s):

T. Someya ◽

H. Akiyama ◽

Y. Kadoya ◽

T. Noda ◽

T. Matsusue ◽

...

Keyword(s):

Mass Spectrometry ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Secondary Ion Mass Spectrometry ◽

Ion Mass Spectrometry ◽

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Corrigendum to’ X-ray diffraction and secondary ion mass spectrometry investigations of GaN films grown on (0 0 1) and (1 1 0) MgF2 substrates by plasma-assisted molecular beam epitaxy (PA-MBE)’. Materials science in semiconductor processing 119 (2020) 105,262

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2020.105544 ◽

2021 ◽

Vol 122 ◽

pp. 105544

Author(s):

Kevin Meyer ◽

Martin Buchholz ◽

Daniel Uxa ◽

Lars Dörrer ◽

Harald Schmidt ◽

...

Keyword(s):

Mass Spectrometry ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Materials Science ◽

Secondary Ion Mass Spectrometry ◽

X Ray Diffraction ◽

Semiconductor Processing ◽

X Ray ◽

Ion Mass Spectrometry ◽

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Secondary-ion-mass spectrometry and high-resolution x-ray diffraction analyses of GaSb–AlGaSb heterostructures grown by molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1372926 ◽

2001 ◽

Vol 19 (3) ◽

pp. 836 ◽

Author(s):

C. Gerardi ◽

C. Giannini ◽

L. De Caro ◽

L. Tapfer ◽

Y. Rouillard ◽

...

Keyword(s):

Mass Spectrometry ◽

High Resolution ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Secondary Ion Mass Spectrometry ◽

X Ray Diffraction ◽

X Ray ◽

Ion Mass Spectrometry ◽

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X-ray diffraction and secondary ion mass spectrometry investigations of GaN films grown on (0 0 1) and (1 1 0) MgF2 substrates by plasma-assisted molecular beam epitaxy (PA-MBE)

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2020.105262 ◽

2020 ◽

Vol 119 ◽

pp. 105262

Author(s):

Kevin Meyer ◽

Martin Buchholz ◽

Daniel Uxa ◽

Lars Dörrer ◽

Harald Schmidt ◽

...

Keyword(s):

Mass Spectrometry ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Secondary Ion Mass Spectrometry ◽

X Ray Diffraction ◽

X Ray ◽

Ion Mass Spectrometry ◽

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Secondary ion mass spectrometry study of the thermal stability of Cu/refractory metal/Si structures

Journal of Applied Physics ◽

10.1063/1.348973 ◽

1991 ◽

Vol 69 (9) ◽

pp. 6719-6721 ◽

Author(s):

L. C. Lane ◽

T. C. Nason ◽

G.‐R. Yang ◽

T.‐M. Lu ◽

H. Bakhru

Keyword(s):

Mass Spectrometry ◽

Thermal Stability ◽

Refractory Metal ◽

Secondary Ion Mass Spectrometry ◽

Mass Spectrometry Study ◽

Ion Mass Spectrometry ◽

Secondary Ion ◽

Thermal Stability Of

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Comment on ?solute carbon and carbon segregation in magnesium oxide single crystals ? A secondary ion mass spectrometry study? by F. Freund

Physics and Chemistry of Minerals ◽

10.1007/bf00308279 ◽

1986 ◽

Vol 13 (4) ◽

pp. 277-279 ◽

Author(s):

I. S. T. Tsong ◽

U. Knipping

Keyword(s):

Mass Spectrometry ◽

Single Crystals ◽

Magnesium Oxide ◽

Secondary Ion Mass Spectrometry ◽

Carbon Segregation ◽

Mass Spectrometry Study ◽

Ion Mass Spectrometry ◽

Solute Carbon ◽

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