Antioxidation and High-Resolution Ultrasonic Temperature Sensor Based on Cr3+:MgAl2O4 Single Crystal Fiber

2020 ◽  
Vol 20 (10) ◽  
pp. 6763-6768
Author(s):  
Tao Wang ◽  
Jian Zhang ◽  
Lu Yang ◽  
Gao Wang ◽  
Na Zhang ◽  
...  
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Temperature Sensor ◽  
Crystal Fiber

A Preparation of High Resolution Standards for Electron Microscopy. Part II

1971 ◽  
Vol 29 ◽  
pp. 160-161
Author(s):  
Akira Tanaka ◽  
David F. Harling
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Carbon Black ◽  
Single Crystal ◽  
Dark Field ◽  
Graphitized Carbon Black ◽  
Graphitized Carbon ◽  
Dark Field Imaging ◽  
Crystal Films ◽  
Micro Holes

In the previous paper, the author reported on a technique for preparing vapor-deposited single crystal films as high resolution standards for electron microscopy. The present paper is intended to describe the preparation of several high resolution standards for dark field microscopy and also to mention some results obtained from these studies. Three preparations were used initially: 1.) Graphitized carbon black, 2.) Epitaxially grown particles of different metals prepared by vapor deposition, and 3.) Particles grown epitaxially on the edge of micro-holes formed in a gold single crystal film.The authors successfully obtained dark field micrographs demonstrating the 3.4Å lattice spacing of graphitized carbon black and the Au single crystal (111) lattice of 2.35Å. The latter spacing is especially suitable for dark field imaging because of its preparation, as in 3.), above. After the deposited film of Au (001) orientation is prepared at 400°C the substrate temperature is raised, resulting in the formation of many square micro-holes caused by partial evaporation of the Au film.

Detection of a point defect in a silicon single crystal by high-resolution TEM

1995 ◽  
Vol 53 ◽  
pp. 466-467
Author(s):  
M. Awaji
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Point Defect ◽  
Point Defects ◽  
Noise Level ◽  
Dark Field ◽  
Silicon Single Crystal ◽  
High Resolution Image ◽  
Dark Field Imaging ◽  
Field Imaging

It is necessary to improve the resolution, brightness and signal-to-noise ratio(s/n) for the detection and identification of point defects in crystals. In order to observe point defects, multi-beam dark-field imaging is one of the useful methods. Though this method can improve resolution and brightness compared with dark-field imaging by diffuse scattering, the problem of s/n still exists. In order to improve the exposure time due to the low intensity of the dark-field image and the low resolution, we discuss in this paper the bright-field high-resolution image and the corresponding subtracted image with reference to a changing noise level, and examine the possibility for in-situ observation, identification and detection of the movement of a point defect produced in the early stage of damage process by high energy electron bombardment.The high-resolution image contrast of a silicon single crystal in the [10] orientation containing a triple divacancy cluster is calculated using the Cowley-Moodie dynamical theory and for a changing gaussian noise level. This divacancy model was deduced from experimental results obtained by electron spin resonance. The calculation condition was for the lMeV Berkeley ARM operated at 800KeV.

Combined high resolution powder and single-crystal diffraction to determine the structure of Li1+xCeIIIxCeIV6-xF25

2007 ◽  
Vol 2007 (suppl_26) ◽  
pp. 455-460 ◽  
Author(s):  
G. Renaudin ◽  
E. Mapemba ◽  
M. El-Ghozzi ◽  
M. Dubois ◽  
D. Avignant ◽  
...  
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Single Crystal Diffraction

High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

2020 ◽  
Vol 14 (6) ◽  
pp. 1168-1173
Author(s):  
A. S. Rysbaev ◽  
M. T. Normurodov ◽  
A. M. Rakhimov ◽  
Z. A. Tursunmetova ◽  
A. K. Tashatov
Keyword(s):  
Single Crystal ◽  
Temperature Sensor ◽  
High Sensitivity

Design and Analysis of Plasmonic Temperature Sensor Utilizing Photonic Crystal Fiber

2020 ◽  
Author(s):  
Md Kamrul Hasan ◽  
Md. Kamrul Hasan ◽  
Md Mahabubur Rahman ◽  
Md. Mahabubur Rahman ◽  
Md. Shamim Anower ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Photonic Crystal Fiber ◽  
Temperature Sensor ◽  
Crystal Fiber

High-Resolution Temperature Sensor Based on Intracavity Sensing of Fiber Ring Laser

2020 ◽  
Vol 38 (7) ◽  
pp. 2010-2014 ◽  
Author(s):  
Jia Shi ◽  
Fan Yang ◽  
Wei Xu ◽  
Degang Xu ◽  
Hua Bai ◽  
...  
Keyword(s):  
High Resolution ◽  
Temperature Sensor ◽  
Ring Laser ◽  
Fiber Ring Laser ◽  
Fiber Ring

Study on the doped crystal fiber high-temperature sensor

1994 ◽  
Author(s):  
Yonghang Shen ◽  
Yanqi Wang ◽  
Linhua Ye ◽  
Zuchang Ding
Keyword(s):  
High Temperature ◽  
Temperature Sensor ◽  
Crystal Fiber ◽  
High Temperature Sensor

Microstructures of Low Angle Boundaries of the Second Generation Single Crystal Superalloy DD6

2011 ◽  
Vol 284-286 ◽  
pp. 1584-1587
Author(s):  
Zhen Xue Shi ◽  
Jia Rong Li ◽  
Shi Zhong Liu ◽  
Jin Qian Zhao
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Thin Layer ◽  
Single Crystal ◽  
Second Generation ◽  
Three Dimensional ◽  
Single Crystal Superalloy ◽  
Transition Electron ◽  
Scanning Electron

The specimens of low angle boundaries were machined from the second generation single crystal superalloy DD6 blades. The microstructures of low angle boundaries (LAB) were investigated from three scales of dendrite, γ′ phase and atom with optical microscopy (OM), scanning electron microscope (SEM), transition electron microscope (TEM) and high resolution transmission electrion microscopy (HREM). The results showed that on the dendrite scale LAB is interdendrite district formed by three dimensional curved face between the adjacent dendrites. On the γ′ phase scale LAB is composed by a thin layer γ phase and its bilateral imperfect cube γ′ phase. On the atom scale LAB is made up of dislocations within several atom thickness.

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