Microstructures of Low Angle Boundaries of the Second Generation Single Crystal Superalloy DD6

2011 ◽  
Vol 284-286 ◽  
pp. 1584-1587
Author(s):  
Zhen Xue Shi ◽  
Jia Rong Li ◽  
Shi Zhong Liu ◽  
Jin Qian Zhao
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Thin Layer ◽  
Single Crystal ◽  
Second Generation ◽  
Three Dimensional ◽  
Single Crystal Superalloy ◽  
Transition Electron ◽  
Scanning Electron

The specimens of low angle boundaries were machined from the second generation single crystal superalloy DD6 blades. The microstructures of low angle boundaries (LAB) were investigated from three scales of dendrite, γ′ phase and atom with optical microscopy (OM), scanning electron microscope (SEM), transition electron microscope (TEM) and high resolution transmission electrion microscopy (HREM). The results showed that on the dendrite scale LAB is interdendrite district formed by three dimensional curved face between the adjacent dendrites. On the γ′ phase scale LAB is composed by a thin layer γ phase and its bilateral imperfect cube γ′ phase. On the atom scale LAB is made up of dislocations within several atom thickness.

Formation Mechanism of Low Angle Boundary of DD6 Single Crystal Superalloy Blades

2012 ◽  
Vol 535-537 ◽  
pp. 1019-1022
Author(s):  
Z.X. Shi ◽  
J.R. Li ◽  
Shi Zhong Liu ◽  
J.Q. Zhao
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Single Crystal ◽  
Formation Mechanism ◽  
Selection Process ◽  
Optical Microscope ◽  
Single Crystal Superalloy ◽  
Competitive Growth ◽  
Solidification Condition ◽  
Scanning Electron

The specimens were machined from DD6 single crystal superalloy blades with low angle boundary. The misorientation of LAB was measured with EBSD technique in scanning electron microscope. The microstructures of specimens with LAB were examined in optical microscope and scanning electron microscope. The formation mechanism of low angle boundary of DD6 single crystal superalloy blades was investigated. The results showed that he formation of LAB which is caused by the deviating orientation from ideal [001] and the angle between the crystal orientation and shell is crystal selection process acted by dendrite competitive growth rule. Part of dendrites have changed their growth orientation a little to the decreasing [001] orientation departure angle because of solidification condition fluctuating during dendrites branching process. The LAB is the obvious interface between the deforming dendrites and their surrounding dendrites.

A Novel High-Resolution Scanning Electron Microscope for the Surface Analysis of High-Aspect-Ratio Three-Dimensional Structures

1991 ◽  
Vol 30 (Part 1, No. 9A) ◽  
pp. 2112-2117 ◽  
Author(s):  
Hideo Nakagawa ◽  
Noboru Nomura ◽  
Taichi Koizumi ◽  
Norimichi Anazawa ◽  
Kenji Harafuji
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Aspect Ratio ◽  
Scanning Electron Microscope ◽  
Surface Analysis ◽  
High Aspect Ratio ◽  
Three Dimensional ◽  
Scanning Electron

Field Emission SEM Equipped With Noise Compensator

1973 ◽  
Vol 31 ◽  
pp. 302-303
Author(s):  
S. Saito ◽  
H. Todokoro ◽  
S. Nomura ◽  
T. Komoda
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Field Emission ◽  
Low Contrast ◽  
Probe Current ◽  
High Resolution Images ◽  
Scanning Electron

Field emission scanning electron microscope (FESEM) features extremely high resolution images, and offers many valuable information. But, for a specimen which gives low contrast images, lateral stripes appear in images. These stripes are resulted from signal fluctuations caused by probe current noises. In order to obtain good images without stripes, the fluctuations should be less than 1%, especially for low contrast images. For this purpose, the authors realized a noise compensator, and applied this to the FESEM.Fig. 1 shows an outline of FESEM equipped with a noise compensator. Two apertures are provided gust under the field emission gun.

High Resolution Scanning Electron Microscopy

1991 ◽  
Vol 49 ◽  
pp. 478-479
Author(s):  
David Joy ◽  
James Pawley
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Probe ◽  
Impact Point ◽  
Interaction Volume ◽  
Scanning Electron

The scanning electron microscope (SEM) builds up an image by sampling contiguous sub-volumes near the surface of the specimen. A fine electron beam selectively excites each sub-volume and then the intensity of some resulting signal is measured. The spatial resolution of images made using such a process is limited by at least three factors. Two of these determine the size of the interaction volume: the size of the electron probe and the extent to which detectable signal is excited from locations remote from the beam impact point. A third limitation emerges from the fact that the probing beam is composed of a finite number of discrete particles and therefore that the accuracy with which any detectable signal can be measured is limited by Poisson statistics applied to this number (or to the number of events actually detected if this is smaller).

Mounting an individual submicrometer sized single crystal

1996 ◽  
Vol 211 (6) ◽  
Author(s):  
R. B. Neder ◽  
M. Burghammer ◽  
Th. Grasl ◽  
H. Schulz
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Single Crystal ◽  
Single Crystals ◽  
High Vacuum ◽  
Nanometer Resolution ◽  
Micro Manipulator ◽  
Scanning Electron

AbstractWe developed a new micro manipulator for mounting individual sub-micrometer sized single crystals within a scanning electron microscope. The translations are realized via a commercially available piezomicroscope, adapted for high vacuum usage and realize nanometer resolution. With this novel instrument it is routinely possible to mount individual single crystals with sizes down to 0.1

FIB Enhancement of Mechanically Polished Cross-sections

2019 ◽  
Author(s):  
Becky Holdford
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Resolution Imaging ◽  
Chemical Attack ◽  
Resolution Imaging ◽  
Scanning Electron

Abstract On mechanically polished cross-sections, getting a surface adequate for high-resolution imaging is sometimes beyond the analyst’s ability, due to material smearing, chipping, polishing media chemical attack, etc.. A method has been developed to enable the focused ion beam (FIB) to re-face the section block and achieve a surface that can be imaged at high resolution in the scanning electron microscope (SEM).

SEM-Based Nanoprobing on 40, 32 and 28 nm CMOS Devices Challenges for Semiconductor Failure Analysis

2013 ◽  
Author(s):  
Erik Paul ◽  
Holger Herzog ◽  
Sören Jansen ◽  
Christian Hobert ◽  
Eckhard Langer
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
Case Studies ◽  
State Of The Art ◽  
Root Cause ◽  
Highly Efficient ◽  
Technology Nodes ◽  
Scanning Electron

Abstract This paper presents an effective device-level failure analysis (FA) method which uses a high-resolution low-kV Scanning Electron Microscope (SEM) in combination with an integrated state-of-the-art nanomanipulator to locate and characterize single defects in failing CMOS devices. The presented case studies utilize several FA-techniques in combination with SEM-based nanoprobing for nanometer node technologies and demonstrate how these methods are used to investigate the root cause of IC device failures. The methodology represents a highly-efficient physical failure analysis flow for 28nm and larger technology nodes.

A Working Method for Adapting the (SEM) Scanning Electron Microscope to Produce (STEM) Scanning Transmission Electron Microscope Images

2002 ◽  
Author(s):  
Edward Coyne
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Theoretical Idea ◽  
Cross Sectional ◽  
Additional Advantage ◽  
Transmission Electron ◽  
Resolution Element ◽  
Scanning Electron

Abstract This paper describes the problems encountered and solutions found to the practical objective of developing an imaging technique that would produce a more detailed analysis of IC material structures then a scanning electron microscope. To find a solution to this objective the theoretical idea of converting a standard SEM to produce a STEM image was developed. This solution would enable high magnification, material contrasting, detailed cross sectional analysis of integrated circuits with an ordinary SEM. This would provide a practical and cost effective alternative to Transmission Electron Microscopy (TEM), where the higher TEM accelerating voltages would ultimately yield a more detailed cross sectional image. An additional advantage, developed subsequent to STEM imaging was the use of EDX analysis to perform high-resolution element identification of IC cross sections. High-resolution element identification when used in conjunction with high-resolution STEM images provides an analysis technique that exceeds the capabilities of conventional SEM imaging.

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