scholarly journals Effect of Sn Addition on Epitaxial GaAs Nanowire Grown at Different Temperatures in Metal–Organic Chemical Vapor Deposition

2019 ◽  
Vol 19 (9) ◽  
pp. 5314-5319 ◽  
Author(s):  
Han Gao ◽  
Qiang Sun ◽  
Mykhaylo Lysevych ◽  
Hark Hoe Tan ◽  
Chennupati Jagadish ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Epitaxial Gaas ◽  
Different Temperatures ◽  
Gaas Nanowire ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Growth and Characterization of Epitaxial GaAs Deposited by Plasma-Enhanced Metal-Organic Chemical Vapor Deposition

1987 ◽  
Vol 98 ◽  
Author(s):  
A. D. Huelsman ◽  
E. Yoon ◽  
R. Reif
Keyword(s):  
Chemical Vapor Deposition ◽  
Partial Pressure ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Structural Quality ◽  
Organic Chemical ◽  
Epitaxial Gaas ◽  
Gaas Films ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTEpitaxial GaAs films have been deposited using a Plasma-Enhanced Metal Organic Chemical Vapor Deposition (PE-MOCVD) technique. This technique uses an RF discharge to dissociate arsine and hydrogen upstream from the substrate. The plasma increases the partial pressure of arsenic above the substrate and improves the growth and quality of GaAs films grown at low teyperature and with low arsine flow rates. We have used photoluminescence, Hall measurements, dislocation etches, and transmission electron microscopy (TEM) to study the properties of films grown with and without plasma. enhancement under a variety of reactor conditions. Specular epitaxial layers of n-GaAs were grown with and without plastua at, very low pressures (2 – 3 Torr) on semiinsulating GaAs substrates. Layers grown both with and without the plasma showed good mobility and photoluminescence at deposition temperatures of 650°C. At lower deposition temperatures the films deposited with the plasma were better than those deposited without the plasma. A KOH-NaOH eutectic etch revealed a better structural quality in films deposited with plasma at low arsine partial pressure.

Growth of γ-In2Se3 films on Si substrates by metal-organic chemical vapor deposition with different temperatures

2008 ◽  
Vol 310 (7-9) ◽  
pp. 1679-1685 ◽  
Author(s):  
Yen-Chin Huang ◽  
Zhen-Yu Li ◽  
Wu-Yih Uen ◽  
Shan-Ming Lan ◽  
K.J. Chang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrates ◽  
Different Temperatures ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride

2021 ◽  
Vol 15 (6) ◽  
pp. 2170024
Author(s):  
Yuxuan Zhang ◽  
Zhaoying Chen ◽  
Kaitian Zhang ◽  
Zixuan Feng ◽  
Hongping Zhao
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Growth-Etch Metal–Organic Chemical Vapor Deposition Approach of WS2 Atomic Layers

ACS Nano ◽  
2020 ◽  
Author(s):  
Assael Cohen ◽  
Avinash Patsha ◽  
Pranab K. Mohapatra ◽  
Miri Kazes ◽  
Kamalakannan Ranganathan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition

2021 ◽  
Vol 118 (16) ◽  
pp. 162109
Author(s):  
Esmat Farzana ◽  
Fikadu Alema ◽  
Wan Ying Ho ◽  
Akhil Mauze ◽  
Takeki Itoh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Schottky Barrier ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Schottky Barrier Diode ◽  
Organic Chemical ◽  
Field Plate ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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