Encapsulation of CsPbBr3 Nanocrystals by a Tripodal Amine Markedly Improves Photoluminescence and Stability Concomitantly via Anion Defect Elimination

2020 ◽  
Vol 32 (17) ◽  
pp. 7159-7171 ◽  
Author(s):  
Jayita Pradhan ◽  
Parikshit Moitra ◽  
Umesh ◽  
Bidisa Das ◽  
Pramita Mondal ◽  
...  
Keyword(s):  
Defect Elimination

New DSPEG Approach to Improvement of SOS Using Low Dose Self-Implantations

1986 ◽  
Vol 74 ◽  
Author(s):  
Eliezer Dovid Richmond ◽  
Alvin R. Knudson ◽  
H. Kawayoshi
Keyword(s):  
Epitaxial Growth ◽  
Low Dose ◽  
Solid Phase ◽  
Silicon Layer ◽  
Amorphous Layer ◽  
New Approach ◽  
Ion Damage ◽  
Defect Elimination

AbstractA new approach is proposed for the material improvement of silicon-on-sapphire (SOS). This approach utilizes the phenomena that the defect elimination throughout the silicon layer depends on both the deep and shallow self-implantations of the double solid phase epitaxial growth (DSPEG) technique for SOS material improvement. The new aspects of this approach are that the deep implantation does not form an amorphous layer, and therefore the ion damage to the substrate is minimized eliminating Al autodoping of the silicon layer.

scholarly journals Experimental investigation and numerical simulation of defect elimination by CO2 laser raster scanning on fused silica

2014 ◽  
Vol 63 (6) ◽  
pp. 068105
Author(s):  
Jiang Yong ◽  
He Shao-Bo ◽  
Yuan Xiao-Dong ◽  
Wang Hai-Jun ◽  
Liao Wei ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Experimental Investigation ◽  
Co2 Laser ◽  
Fused Silica ◽  
Raster Scanning ◽  
Defect Elimination
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