Experimental Observation of Anisotropic Valence Band Dispersion in Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) Single Crystals

2021 ◽  
Vol 125 (5) ◽  
pp. 2938-2943
Author(s):  
Riku Takeuchi ◽  
Seiichiro Izawa ◽  
Yuri Hasegawa ◽  
Ryohei Tsuruta ◽  
Takuma Yamaguchi ◽  
...  
Keyword(s):  
Single Crystals ◽  
Valence Band ◽  
Experimental Observation ◽  
Band Dispersion

scholarly journals Valence band dispersion measurements of perovskite single crystals using angle-resolved photoemission spectroscopy

2017 ◽  
Vol 19 (7) ◽  
pp. 5361-5365 ◽  
Author(s):  
Congcong Wang ◽  
Benjamin R. Ecker ◽  
Haotong Wei ◽  
Jinsong Huang ◽  
Jian-Qiao Meng ◽  
...  
Keyword(s):  
Band Structure ◽  
Single Crystals ◽  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Band Dispersion

The ARPES study of perovskite single crystals revealed the band structure along theΓXandΓMdirections.

Valence band dispersion measured in the surface normal direction of CH3NH3PbI3 single crystals

2019 ◽  
Vol 13 (1) ◽  
pp. 011009 ◽  
Author(s):  
Jin-Peng Yang ◽  
Si-Xian Ren ◽  
Takuma Yamaguchi ◽  
Matthias Meissner ◽  
Li-wen Cheng ◽  
...  
Keyword(s):  
Single Crystals ◽  
Valence Band ◽  
Normal Direction ◽  
Surface Normal ◽  
Band Dispersion

Experimental observation of valence band dispersion and increased hole conductivity in CuCr1−xLixO2−ySy

2021 ◽  
Vol 25 ◽  
pp. 90-96
Author(s):  
Prasanta Mandal ◽  
Nilesh Mazumder ◽  
Subhajit Saha ◽  
Uttam Kumar Ghorai ◽  
Rajarshi Roy ◽  
...  
Keyword(s):  
Valence Band ◽  
Experimental Observation ◽  
Hole Conductivity ◽  
Band Dispersion

scholarly journals Valence Band Structures of Organic Semiconductor Single Crystals Demonstrated by Sample Charging Durable Photoemission Techniques

Hyomen Kagaku ◽  
2014 ◽  
Vol 35 (4) ◽  
pp. 215-220
Author(s):  
Yasuo NAKAYAMA ◽  
Hisao ISHII
Keyword(s):  
Single Crystals ◽  
Valence Band ◽  
Organic Semiconductor ◽  
Band Structures

Valence Band Dispersion Embedded in Resonant Auger Electrons

2021 ◽  
Vol 90 (12) ◽  
Author(s):  
Fumihiko Matsui ◽  
Seiji Makita ◽  
Hiroyuki Matsuda ◽  
Eiken Nakamura ◽  
Yasuaki Okano ◽  
...  
Keyword(s):  
Valence Band ◽  
Auger Electrons ◽  
Band Dispersion

Interface Electronic Structure and Valence Band Dispersion of Bis(1,2,5-thiadiazolo)-p-quinobis(1,3-dithiole) on Polycrystalline Au Electrodes

2021 ◽  
Author(s):  
Yasuo Nakayama ◽  
Koji Sudo ◽  
Noboru Ohashi ◽  
Satoshi Kera ◽  
Yasuyuki Watanabe
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Band Dispersion

scholarly journals Electronic and Crystallographic Examinations of the Homoepitaxially Grown Rubrene Single Crystals

Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 1978 ◽  
Author(s):  
Yasuo Nakayama ◽  
Masaki Iwashita ◽  
Mitsuru Kikuchi ◽  
Ryohei Tsuruta ◽  
Koki Yoshida ◽  
...  
Keyword(s):  
Single Crystals ◽  
Valence Band ◽  
Lattice Distortion ◽  
Grazing Incidence ◽  
Valence Band Maximum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Homoepitaxial Growth ◽  
Highly Sensitive ◽  
Doping Ratio

Homoepitaxial growth of organic semiconductor single crystals is a promising methodology toward the establishment of doping technology for organic opto-electronic applications. In this study, both electronic and crystallographic properties of homoepitaxially grown single crystals of rubrene were accurately examined. Undistorted lattice structures of homoepitaxial rubrene were confirmed by high-resolution analyses of grazing-incidence X-ray diffraction (GIXD) using synchrotron radiation. Upon bulk doping of acceptor molecules into the homoepitaxial single crystals of rubrene, highly sensitive photoelectron yield spectroscopy (PYS) measurements unveiled a transition of the electronic states, from induction of hole states at the valence band maximum at an adequate doping ratio (10 ppm), to disturbance of the valence band itself for excessive ratios (≥ 1000 ppm), probably due to the lattice distortion.

Photoelectron emission from semiconductors with low valence band dispersion

1982 ◽  
Vol 25 (4) ◽  
pp. 351-354
Author(s):  
V. V. Konev ◽  
V. A. Chaldyshev
Keyword(s):  
Valence Band ◽  
Photoelectron Emission ◽  
Band Dispersion

scholarly journals Free-carrier effects in gallium nitride epilayers: Valence-band dispersion

2001 ◽  
Vol 64 (8) ◽  
Author(s):  
P. A. Shields ◽  
R. J. Nicholas ◽  
F. M. Peeters ◽  
B. Beaumont ◽  
P. Gibart
Keyword(s):  
Gallium Nitride ◽  
Valence Band ◽  
Free Carrier ◽  
Band Dispersion
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