Valence band dispersion measured in the surface normal direction of CH3NH3PbI3 single crystals

2019 ◽  
Vol 13 (1) ◽  
pp. 011009 ◽  
Author(s):  
Jin-Peng Yang ◽  
Si-Xian Ren ◽  
Takuma Yamaguchi ◽  
Matthias Meissner ◽  
Li-wen Cheng ◽  
...  
2017 ◽  
Vol 19 (7) ◽  
pp. 5361-5365 ◽  
Author(s):  
Congcong Wang ◽  
Benjamin R. Ecker ◽  
Haotong Wei ◽  
Jinsong Huang ◽  
Jian-Qiao Meng ◽  
...  

The ARPES study of perovskite single crystals revealed the band structure along theΓXandΓMdirections.


2021 ◽  
Vol 125 (5) ◽  
pp. 2938-2943
Author(s):  
Riku Takeuchi ◽  
Seiichiro Izawa ◽  
Yuri Hasegawa ◽  
Ryohei Tsuruta ◽  
Takuma Yamaguchi ◽  
...  

1999 ◽  
Vol 14 (7) ◽  
pp. 2905-2911 ◽  
Author(s):  
Sangsub Kim ◽  
Tae Soo Kang ◽  
Jung Ho Je

Epitaxial (Ba0.5Sr0.5) TiO3 thin films of two different thickness (∼25 and ∼134 nm) on MgO(001) prepared by a pulsed laser deposition method were studied by synchrotron x-ray scattering measurements. The film grew initially with a cube-on-cube relationship, maintaining it during further growth. As the film grew, the surface of the film became significantly rougher, but the interface between the film and the substrate did not. In the early stage of growth, the film was highly strained in a tetragonal structure (c/a = 1.04) with the longer axis parallel to the surface normal direction. As the growth proceeded further, it relaxed to a cubic structure with the lattice parameter near the bulk value, and the mosaic distribution improved significantly in both in- and out-of-plane directions. The thinner film (∼25 nm) showed only one domain limited mainly by the film thickness, but the thicker film (∼134 nm) exhibited three domains along the surface normal direction.


2021 ◽  
Vol 90 (12) ◽  
Author(s):  
Fumihiko Matsui ◽  
Seiji Makita ◽  
Hiroyuki Matsuda ◽  
Eiken Nakamura ◽  
Yasuaki Okano ◽  
...  

Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 1978 ◽  
Author(s):  
Yasuo Nakayama ◽  
Masaki Iwashita ◽  
Mitsuru Kikuchi ◽  
Ryohei Tsuruta ◽  
Koki Yoshida ◽  
...  

Homoepitaxial growth of organic semiconductor single crystals is a promising methodology toward the establishment of doping technology for organic opto-electronic applications. In this study, both electronic and crystallographic properties of homoepitaxially grown single crystals of rubrene were accurately examined. Undistorted lattice structures of homoepitaxial rubrene were confirmed by high-resolution analyses of grazing-incidence X-ray diffraction (GIXD) using synchrotron radiation. Upon bulk doping of acceptor molecules into the homoepitaxial single crystals of rubrene, highly sensitive photoelectron yield spectroscopy (PYS) measurements unveiled a transition of the electronic states, from induction of hole states at the valence band maximum at an adequate doping ratio (10 ppm), to disturbance of the valence band itself for excessive ratios (≥ 1000 ppm), probably due to the lattice distortion.


1982 ◽  
Vol 25 (4) ◽  
pp. 351-354
Author(s):  
V. V. Konev ◽  
V. A. Chaldyshev

2001 ◽  
Vol 64 (8) ◽  
Author(s):  
P. A. Shields ◽  
R. J. Nicholas ◽  
F. M. Peeters ◽  
B. Beaumont ◽  
P. Gibart

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