scholarly journals Valence Band Structures of Organic Semiconductor Single Crystals Demonstrated by Sample Charging Durable Photoemission Techniques

Hyomen Kagaku ◽  
2014 ◽  
Vol 35 (4) ◽  
pp. 215-220
Author(s):  
Yasuo NAKAYAMA ◽  
Hisao ISHII
Keyword(s):  
Single Crystals ◽  
Valence Band ◽  
Organic Semiconductor ◽  
Band Structures

scholarly journals Photoelectron spectroscopy on single crystals of organic semiconductors: experimental electronic band structure for optoelectronic properties

2020 ◽  
Vol 8 (27) ◽  
pp. 9090-9132 ◽  
Author(s):  
Yasuo Nakayama ◽  
Satoshi Kera ◽  
Nobuo Ueno
Keyword(s):  
Band Structure ◽  
Single Crystals ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Photoelectron Spectroscopy ◽  
Electronic Band Structure ◽  
Band Structures ◽  
Electronic Band ◽  
Hybrid Perovskite ◽  
Electronic Band Structures

Methodologies and experimental achievements for exploration into electronic band structures of organic semiconductor and hybrid perovskite single crystals are reviewed.

Substrate Selection for Full Exploitation of Organic Semiconductor Films: Epitaxial Rubrene on β-Alanine Single Crystals

2015 ◽  
Vol 2 (18) ◽  
pp. 1500423 ◽  
Author(s):  
Silvia Trabattoni ◽  
Luisa Raimondo ◽  
Marcello Campione ◽  
Daniele Braga ◽  
Vincent C. Holmberg ◽  
...  
Keyword(s):  
Single Crystals ◽  
Organic Semiconductor ◽  
Semiconductor Films ◽  
Substrate Selection ◽  
Selection For

scholarly journals Electronic and Crystallographic Examinations of the Homoepitaxially Grown Rubrene Single Crystals

Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 1978 ◽  
Author(s):  
Yasuo Nakayama ◽  
Masaki Iwashita ◽  
Mitsuru Kikuchi ◽  
Ryohei Tsuruta ◽  
Koki Yoshida ◽  
...  
Keyword(s):  
Single Crystals ◽  
Valence Band ◽  
Lattice Distortion ◽  
Grazing Incidence ◽  
Valence Band Maximum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Homoepitaxial Growth ◽  
Highly Sensitive ◽  
Doping Ratio

Homoepitaxial growth of organic semiconductor single crystals is a promising methodology toward the establishment of doping technology for organic opto-electronic applications. In this study, both electronic and crystallographic properties of homoepitaxially grown single crystals of rubrene were accurately examined. Undistorted lattice structures of homoepitaxial rubrene were confirmed by high-resolution analyses of grazing-incidence X-ray diffraction (GIXD) using synchrotron radiation. Upon bulk doping of acceptor molecules into the homoepitaxial single crystals of rubrene, highly sensitive photoelectron yield spectroscopy (PYS) measurements unveiled a transition of the electronic states, from induction of hole states at the valence band maximum at an adequate doping ratio (10 ppm), to disturbance of the valence band itself for excessive ratios (≥ 1000 ppm), probably due to the lattice distortion.

POSSIBLE EVIDENCE FOR A VALENCE BAND SATELLITE IN PHOTOEMISSION SPECTRA FROM Sc(0001)

1994 ◽  
Vol 01 (04) ◽  
pp. 649-653 ◽  
Author(s):  
A.J. PATCHETT ◽  
S.S. DHESI ◽  
R.I.R. BLYTH ◽  
S.D. BARRETT
Keyword(s):  
Electronic Structure ◽  
Rare Earth ◽  
Binding Energy ◽  
Single Crystals ◽  
Valence Band ◽  
Ground State ◽  
Rare Earth Metals ◽  
Final State ◽  
Bulk Single Crystals ◽  
The Creation

An intense photoemission feature is observed at a binding energy of ~10 eV in the UV photoemission spectra from the (0001) surfaces of bulk single crystals of rare-earth metals. This emission cannot be explained in terms of ground state electronic structure and we have been unable to attribute its existence to the presence of contamination of the surface. We present some evidence that may indicate its origin lies in the creation, by the photoemission process, of a metastable two-hole final state.

Finite element analysis of valence band structures in quantum wires

2004 ◽  
Vol 96 (4) ◽  
pp. 2055-2062 ◽  
Author(s):  
Seoung-Hwan Park ◽  
Doyeol Ahn ◽  
Yong-Tak Lee
Keyword(s):  
Finite Element Analysis ◽  
Finite Element ◽  
Valence Band ◽  
Quantum Wires ◽  
Band Structures ◽  
Element Analysis
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