Elimination of Grain Boundaries in Graphene Growth on a Cu–Ni Alloyed Substrate by Chemical Vapor Deposition

Abstract Graphene has attracted enormous research interest due to its extraordinary material properties. Process control to achieve high-quality graphene is indispensable for graphene-based applications. This research investigates the effects of process parameters on graphene quality in a low-pressure chemical vapor deposition (LPCVD) graphene growth process. A fractional factorial design of experiment is conducted to provide understanding on not only the main effect of process parameters, but also the interaction effect among them. Graphene quality including the number of layers and grain size is analyzed. To achieve monolayer graphene with large grain size, a condition with low CH4–H2 ratio, short growth time, high growth pressure, high growth temperature, and slow cooling rate is recommended. This study considers a large set of process parameters with their interaction effects and provides guidelines to optimize graphene growth via LPCVD focusing on the number of graphene layers and the grain size.

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The growth modes of graphene in the initial stage of a chemical vapor-deposition process

RSC Advances ◽

10.1039/c6ra18023j ◽

2016 ◽

Vol 6 (94) ◽

pp. 91157-91162 ◽

Cited By ~ 3

Author(s):

Zhaoming Fu ◽

Yipeng An

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Chemical Vapor Deposition Process ◽

Graphene Growth ◽

Carbon Chains ◽

Growth Modes ◽

Initial Stage ◽

Vapor Deposition Process

The different growth modes of carbon chains and carbon islands in the initial stage of graphene growth.

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Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.4806998 ◽

2013 ◽

Vol 113 (20) ◽

pp. 203501 ◽

Cited By ~ 28

Author(s):

A. Michon ◽

S. Vézian ◽

E. Roudon ◽

D. Lefebvre ◽

M. Zielinski ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Graphene Growth

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3C-SiC Bulk Sublimation Growth on CVD Hetero-Epitaxial Seeding Layers

Materials Science Forum ◽

10.4028/www.scientific.net/msf.897.15 ◽

2017 ◽

Vol 897 ◽

pp. 15-18 ◽

Cited By ~ 1

Author(s):

Philipp Schuh ◽

Grazia Litrico ◽

Francesco La Via ◽

Marco Mauceri ◽

Peter J. Wellmann

Keyword(s):

Chemical Vapor Deposition ◽

Grain Boundaries ◽

Vapor Deposition ◽

Chemical Vapor ◽

Crystalline Quality ◽

High Crystalline Quality ◽

Sublimation Growth

We report on the growth of bulk 3C-SiC by sublimation on epitaxial seeding layers (3C-SiC/Si) from chemical vapor deposition. We have reached a materials thickness of 0.85 mm and an area of 10.5 cm2 which can be enlarged further. The high crystalline quality is characterized by the absence of secondary polytype inclusions and the absence double position grain boundaries.

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