Understanding the Reaction Kinetics to Optimize Graphene Growth on Cu by Chemical Vapor Deposition

Abstract Graphene has attracted enormous research interest due to its extraordinary material properties. Process control to achieve high-quality graphene is indispensable for graphene-based applications. This research investigates the effects of process parameters on graphene quality in a low-pressure chemical vapor deposition (LPCVD) graphene growth process. A fractional factorial design of experiment is conducted to provide understanding on not only the main effect of process parameters, but also the interaction effect among them. Graphene quality including the number of layers and grain size is analyzed. To achieve monolayer graphene with large grain size, a condition with low CH4–H2 ratio, short growth time, high growth pressure, high growth temperature, and slow cooling rate is recommended. This study considers a large set of process parameters with their interaction effects and provides guidelines to optimize graphene growth via LPCVD focusing on the number of graphene layers and the grain size.

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The growth modes of graphene in the initial stage of a chemical vapor-deposition process

RSC Advances ◽

10.1039/c6ra18023j ◽

2016 ◽

Vol 6 (94) ◽

pp. 91157-91162 ◽

Cited By ~ 3

Author(s):

Zhaoming Fu ◽

Yipeng An

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Chemical Vapor Deposition Process ◽

Graphene Growth ◽

Carbon Chains ◽

Growth Modes ◽

Initial Stage ◽

Vapor Deposition Process

The different growth modes of carbon chains and carbon islands in the initial stage of graphene growth.

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Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.4806998 ◽

2013 ◽

Vol 113 (20) ◽

pp. 203501 ◽

Cited By ~ 28

Author(s):

A. Michon ◽

S. Vézian ◽

E. Roudon ◽

D. Lefebvre ◽

M. Zielinski ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Graphene Growth

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Formation of Carbon Clusters in the Initial Stage of Chemical Vapor Deposition Graphene Growth on Ni(111) Surface

The Journal of Physical Chemistry C ◽

10.1021/jp2051454 ◽

2011 ◽

Vol 115 (36) ◽

pp. 17695-17703 ◽

Cited By ~ 88

Author(s):

Junfeng Gao ◽

Qinghong Yuan ◽

Hong Hu ◽

Jijun Zhao ◽

Feng Ding

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Carbon Clusters ◽

Graphene Growth ◽

Initial Stage ◽

Chemical Vapor Deposition Graphene

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Reaction Kinetics of Epitaxial Silicon Deposition at 220-400°C Using Remote Plasma-Enhanced Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-165-145 ◽

1989 ◽

Vol 165 ◽

Cited By ~ 1

Author(s):

B. Anthony ◽

T. Hsu ◽

L. Breaux ◽

S. Banerjee ◽

A. Tasch

Keyword(s):

Growth Rate ◽

Chemical Vapor Deposition ◽

Reaction Kinetics ◽

Vapor Deposition ◽

Chemical Vapor ◽

Epitaxial Silicon ◽

Remote Plasma ◽

Inert Carrier ◽

Substrate Temperatures ◽

Kinetics Of

AbstractIn this paper the reaction kinetics of Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD) are investigated. Growth rate characterization has been performed for substrate temperatures of 220 – 400°C, r-f powers from 4 – 8 W, and silane flow rates of 10 – 30 sccm. Growth rate has been found to increase exponentially with r-f power, which is, as yet, unexplained. An approximate square root dependence of growth rate on silane partial pressure agrees with the theory of Claasen et. Al for Chemical Vapor Deposition (CVD) of silicon from silane with an inert carrier gas. From an Arrhenius plot of the temperature dependence of growth rate, we note a change of slope at ∼300°C which we have attributed to the behavior of hydrogen at the silicon surface.

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