Atomic-Scale Electronic Characterization of Defects in Silicon Carbide Nanowires by Electron Energy-Loss Spectroscopy

2018 ◽  
Vol 122 (22) ◽  
pp. 12047-12051 ◽  
Author(s):  
Lunet E. Luna ◽  
David Gardner ◽  
Velimir Radmilovic ◽  
Roya Maboudian ◽  
Carlo Carraro
Author(s):  
N. D. Browning ◽  
M. M. McGibbon ◽  
M. F. Chisholm ◽  
S. J. Pennycook

The recent development of the Z-contrast imaging technique for the VG HB501 UX dedicated STEM, has added a high-resolution imaging facility to a microscope used mainly for microanalysis. This imaging technique not only provides a high-resolution reference image, but as it can be performed simultaneously with electron energy loss spectroscopy (EELS), can be used to position the electron probe at the atomic scale. The spatial resolution of both the image and the energy loss spectrum can be identical, and in principle limited only by the 2.2 Å probe size of the microscope. There now exists, therefore, the possibility to perform chemical analysis of materials on the scale of single atomic columns or planes.In order to achieve atomic resolution energy loss spectroscopy, the range over which a fast electron can cause a particular excitation event, must be less than the interatomic spacing. This range is described classically by the impact parameter, b, which ranges from ~10 Å for the low loss region of the spectrum to <1Å for the core losses.


2014 ◽  
Vol 115 (3) ◽  
pp. 034302 ◽  
Author(s):  
J. Palisaitis ◽  
A. Lundskog ◽  
U. Forsberg ◽  
E. Janzén ◽  
J. Birch ◽  
...  

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