Nanosecond-Timescale Low Energy Switching of In-Plane Magnetic Tunnel Junctions through Dynamic Oersted-Field-Assisted Spin Hall Effect

S. V. Aradhya; G. E. Rowlands; J. Oh; D. C. Ralph; R. A. Buhrman

doi:10.1021/acs.nanolett.6b01443

Nanosecond-Timescale Low Energy Switching of In-Plane Magnetic Tunnel Junctions through Dynamic Oersted-Field-Assisted Spin Hall Effect

Nano Letters ◽

10.1021/acs.nanolett.6b01443 ◽

2016 ◽

Vol 16 (10) ◽

pp. 5987-5992 ◽

Cited By ~ 65

Author(s):

S. V. Aradhya ◽

G. E. Rowlands ◽

J. Oh ◽

D. C. Ralph ◽

R. A. Buhrman

Keyword(s):

Hall Effect ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Low Energy ◽

Spin Hall Effect

Download Full-text

Efficient switching of 3-terminal magnetic tunnel junctions by the giant spin Hall effect of Pt85Hf15 alloy

Applied Physics Letters ◽

10.1063/1.5021077 ◽

2018 ◽

Vol 112 (6) ◽

pp. 062404 ◽

Cited By ~ 9

Author(s):

Minh-Hai Nguyen ◽

Shengjie Shi ◽

Graham E. Rowlands ◽

Sriharsha V. Aradhya ◽

Colin L. Jermain ◽

...

Keyword(s):

Hall Effect ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Spin Hall Effect

Download Full-text

Low-Power, High-Density Spintronic Programmable Logic With Voltage-Gated Spin Hall Effect in Magnetic Tunnel Junctions

IEEE Magnetics Letters ◽

10.1109/lmag.2016.2538742 ◽

2016 ◽

Vol 7 ◽

pp. 1-5 ◽

Cited By ~ 4

Author(s):

Hochul Lee ◽

Farbod Ebrahimi ◽

Pedram Khalili Amiri ◽

Kang L. Wang

Keyword(s):

Low Power ◽

Hall Effect ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

High Density ◽

Spin Hall Effect ◽

Programmable Logic ◽

Voltage Gated

Download Full-text

Corrigendum: Spintronic logic design methodology based on spin Hall effect-driven magnetic tunnel junctions (2016 J. Phys. D: Appl. Phys. 49 065008)

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/49/22/229502 ◽

2016 ◽

Vol 49 (22) ◽

pp. 229502

Author(s):

Wang Kang ◽

Zhaohao Wang ◽

Youguang Zhang ◽

Jacques-Olivier Klein ◽

Weifeng Lv ◽

...

Keyword(s):

Hall Effect ◽

Design Methodology ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Spin Hall Effect ◽

Logic Design ◽

Spintronic Logic

Download Full-text

Large spin Hall effect and tunneling magnetoresistance in iridium-based magnetic tunnel junctions

Science China Physics Mechanics and Astronomy ◽

10.1007/s11433-019-9433-4 ◽

2019 ◽

Vol 63 (1) ◽

Cited By ~ 1

Author(s):

JiaQi Zhou ◽

HangYu Zhou ◽

Arnaud Bournel ◽

WeiSheng Zhao

Keyword(s):

Hall Effect ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Spin Hall Effect ◽

Tunneling Magnetoresistance ◽

Large Spin

Download Full-text

Spintronic logic design methodology based on spin Hall effect–driven magnetic tunnel junctions

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/49/6/065008 ◽

2016 ◽

Vol 49 (6) ◽

pp. 065008 ◽

Cited By ~ 21

Author(s):

Wang Kang ◽

Zhaohao Wang ◽

Youguang Zhang ◽

Jacques-Olivier Klein ◽

Weifeng Lv ◽

...

Keyword(s):

Hall Effect ◽

Design Methodology ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Spin Hall Effect ◽

Logic Design ◽

Spintronic Logic

Download Full-text

Low Store Power, High Speed, High Density, Nonvolatile SRAM Design with Spin Hall Effect-Driven Magnetic Tunnel Junctions

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2016.2640338 ◽

2016 ◽

pp. 1-1 ◽

Cited By ~ 13

Author(s):

Wang Kang ◽

Weifeng Lv ◽

Youguang Zhang ◽

Weisheng Zhao

Keyword(s):

Hall Effect ◽

High Speed ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

High Density ◽

Spin Hall Effect ◽

Sram Design

Download Full-text

Low-Energy Acceleration of Binarized Convolutional Neural Networks using a Spin Hall Effect based Logic-in-Memory Architecture

IEEE Transactions on Emerging Topics in Computing ◽

10.1109/tetc.2019.2915589 ◽

2019 ◽

pp. 1-1 ◽

Cited By ~ 2

Author(s):

Ashkan Samiee ◽

Payal Borulkar ◽

R. F. DeMara ◽

Peiyi Zhao ◽

Yu Bai

Keyword(s):

Neural Networks ◽

Hall Effect ◽

Convolutional Neural Networks ◽

Low Energy ◽

Spin Hall Effect ◽

Memory Architecture

Download Full-text

Temperature and bias-voltage dependent transport in magnetic tunnel junctions with low energy Ar-ion irradiated barriers

Physical Review B ◽

10.1103/physrevb.68.224437 ◽

2003 ◽

Vol 68 (22) ◽

Cited By ~ 15

Author(s):

J. Schmalhorst ◽

G. Reiss

Keyword(s):

Bias Voltage ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Low Energy ◽

Voltage Dependent ◽

Dependent Transport

Download Full-text

Ion beam smoothing with low-energy argon ions and reduction of Néel “orange peel” coupling in magnetic tunnel junctions

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2004.11.468 ◽

2005 ◽

Vol 290-291 ◽

pp. 1108-1111 ◽

Cited By ~ 8

Author(s):

P.A. Beck ◽

B.F.P. Roos ◽

S.O. Demokritov ◽

B. Hillebrands

Keyword(s):

Tunnel Junctions ◽

Ion Beam ◽

Magnetic Tunnel Junctions ◽

Orange Peel ◽

Low Energy ◽

Argon Ions

Download Full-text

Topological Insulator Magnetic Tunnel Junctions: Quantum Hall Effect and Fractional Charge via Folding

Physical Review Letters ◽

10.1103/physrevlett.109.176803 ◽

2012 ◽

Vol 109 (17) ◽

Cited By ~ 16

Author(s):

Qinglei Meng ◽

Smitha Vishveshwara ◽

Taylor L. Hughes

Keyword(s):

Hall Effect ◽

Quantum Hall Effect ◽

Topological Insulator ◽

Tunnel Junctions ◽

Quantum Hall ◽

Magnetic Tunnel Junctions ◽

Fractional Charge

Download Full-text