Large spin Hall effect and tunneling magnetoresistance in iridium-based magnetic tunnel junctions

Author(s):  
JiaQi Zhou ◽  
HangYu Zhou ◽  
Arnaud Bournel ◽  
WeiSheng Zhao
Nano Letters ◽  
2016 ◽  
Vol 16 (10) ◽  
pp. 5987-5992 ◽  
Author(s):  
S. V. Aradhya ◽  
G. E. Rowlands ◽  
J. Oh ◽  
D. C. Ralph ◽  
R. A. Buhrman

2018 ◽  
Vol 112 (6) ◽  
pp. 062404 ◽  
Author(s):  
Minh-Hai Nguyen ◽  
Shengjie Shi ◽  
Graham E. Rowlands ◽  
Sriharsha V. Aradhya ◽  
Colin L. Jermain ◽  
...  

2016 ◽  
Vol 49 (6) ◽  
pp. 065008 ◽  
Author(s):  
Wang Kang ◽  
Zhaohao Wang ◽  
Youguang Zhang ◽  
Jacques-Olivier Klein ◽  
Weifeng Lv ◽  
...  

2021 ◽  
Vol 130 (3) ◽  
pp. 033901
Author(s):  
Dhritiman Bhattacharya ◽  
Peng Sheng ◽  
Md Ahsanul Abeed ◽  
Zhengyang Zhao ◽  
Hongshi Li ◽  
...  

2007 ◽  
Vol 17 (03) ◽  
pp. 593-598 ◽  
Author(s):  
N. N. BELETSKII ◽  
S. A. BORYSENKO ◽  
V. M. YAKOVENKO ◽  
G. P. BERMAN ◽  
S. A. WOLF

The magnetoresistance of Fe/MgO/Fe magnetic tunnel junctions (MTJs) was studied taking into consideration image forces. For MTJs with an MgO insulator, explanations are given of the giant tunneling magnetoresistance (TMR) effect and the effect of the increasing TMR with an increase in MgO insulator thickness. It is demonstrated that the electron current density through MTJs can be high enough to switch the magnetization of a ferromagnetic electrode.


2007 ◽  
Vol 90 (25) ◽  
pp. 252506 ◽  
Author(s):  
Rie Matsumoto ◽  
Akio Fukushima ◽  
Taro Nagahama ◽  
Yoshishige Suzuki ◽  
Koji Ando ◽  
...  

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