Through the silicon modulation-doping (MD) growth method, the electrical performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) is improved by replacing the commonly uniform-doped (UD) method of n-AlGaN layer. The electroluminescence characterisic measurements demonstrate the MD growth method could effectively enhance the light emission intensity. Both the forward voltage and reverse leakage current of the MD samples are obviously reduced compared to those of the UD sample. Due to the existence of periodic Si-MD superlattices in n-AlGaN layers, which may behave like a series of capacitors, the built-in electric fields are formed. Both the measured capacitance–voltage (C–V) characteristics, and related photoluminescence (PL) intensity with the Si-MD growth method are enhanced. In detail, the effects of these capacitors can enhance the peak internal capacitance up to 370 pF in the MD sample, whereas the UD sample is only 180 pF. The results also mean that with better current spreading ability in the MD sample, the MD processes can effectively enhance the efficiency and reliability of DUV-LEDs. Thus, the investigations of the Si-MD growth methods may be useful for improving the electrical performance of DUV-LEDs in future works. Meanwhile, this investigation may partly suggest the minor crystalline quality improvements in the epi-layers succeeding the MD n-AlGaN layer.
AlGaN-InGaN-GaN Near Ultraviolet Light Emitting Diode
