Self-Assembled Metal–Organic Complexes for Thermally Reversible Permeabilization of Cell Membranes

2019 ◽  
Vol 2 (3) ◽  
pp. 970-974
Author(s):  
Safaa Al-Rehili ◽  
Mram Alyami ◽  
Yang Zhang ◽  
Basem Moosa ◽  
Peng Yang ◽  
...  
ChemInform ◽  
2014 ◽  
Vol 45 (30) ◽  
pp. no-no
Author(s):  
Rana A. Bilbeisi ◽  
John-Carl Olsen ◽  
Loic J. Charbonniere ◽  
Ali Trabolsi

2019 ◽  
Vol 21 (21) ◽  
pp. 10992-11003 ◽  
Author(s):  
Peter S. Deimel ◽  
Peter Feulner ◽  
Johannes V. Barth ◽  
Francesco Allegretti

A self-assembled monolayer of 4-fluorothiophenol serves as a thermally removable spacer to decouple adsorbed metal–organic complexes from a Ag(111) support.


2014 ◽  
Vol 417 ◽  
pp. 79-108 ◽  
Author(s):  
Rana A. Bilbeisi ◽  
John-Carl Olsen ◽  
Loïc J. Charbonnière ◽  
Ali Trabolsi

2009 ◽  
pp. 5365 ◽  
Author(s):  
Jian-Qiang Liu ◽  
Ya-Nan Zhang ◽  
Yao-Yu Wang ◽  
Jun-Cheng Jin ◽  
Elmira Kh. Lermontova ◽  
...  

2012 ◽  
Vol 109 (26) ◽  
Author(s):  
T. R. Umbach ◽  
M. Bernien ◽  
C. F. Hermanns ◽  
A. Krüger ◽  
V. Sessi ◽  
...  

2005 ◽  
Vol 891 ◽  
Author(s):  
Ronald A. Arif ◽  
Nam-Heon Kim ◽  
Luke J. Mawst ◽  
Nelson Tansu

ABSTRACTSelf-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.


Sign in / Sign up

Export Citation Format

Share Document