Giant Enhancement of Fluorescence Emission by Fluorination of Porous Graphene with High Defect Density and Subsequent Application as Fe3+ Ion Sensors

2020 ◽  
Vol 12 (36) ◽  
pp. 40662-40672
Author(s):  
Kun Fan ◽  
Liansi Peng ◽  
Yang Liu ◽  
Yu Li ◽  
Yue Chen ◽  
...  
Keyword(s):  
Defect Density ◽  
Fluorescence Emission ◽  
Ion Sensors ◽  
Porous Graphene ◽  
High Defect Density ◽  
Subsequent Application

scholarly journals Broken symmetry of in-gap quasiparticle excitations in superconducting FeSe(001) with high defect density

2018 ◽  
Vol 98 (22) ◽  
Author(s):  
Jonathan Baptista ◽  
Sergio Vlaic ◽  
Pierre Toulemonde ◽  
Sandra Karlsson ◽  
Pierre Strobel ◽  
...  
Keyword(s):  
Defect Density ◽  
Broken Symmetry ◽  
High Defect Density ◽  
Quasiparticle Excitations

The Concentration of (SiH2)n Sites in Low and High Defect Density a-Si:H

2006 ◽  
Vol 910 ◽  
Author(s):  
David C. Bobela ◽  
T. Su ◽  
P. C. Taylor ◽  
A. Madan ◽  
G. Ganguly
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Magnetic Resonance ◽  
Hydrogen Content ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Proton Nuclear Magnetic Resonance ◽  
Dangling Bond ◽  
High Defect Density ◽  
Quality Material ◽  
Hydrogenated Amorphous

AbstractThe concentration of polysilane chains (SiH2)n, where n≥1, is estimated for higher quality hydrogenated amorphous silicon (a-Si:H) by pulsed proton nuclear magnetic resonance techniques (1H NMR). Our measurements indicate the minimum hydrogen content of approximately 10% of the total hydrogen is in the (SiH2)n configuration. Similar measurements in a high defect density sample (1017 silicon dangling bond defects cm-3) show that (SiH2)n sites account for ~ 15% of the total hydrogen. While the (SiH2)n infrared absorption (IR) modes are observed in the highly defective sample, no such modes are seen in the higher quality material. The results indicate that a significant amount of the total hydrogen content exists as (SiH2)n regardless of film quality.

Studies of Critical Current Density Enhancement in (Cax Y1−x)Ba2Cu4O8 (1:2:4)

1991 ◽  
Vol 235 ◽  
Author(s):  
P. K. Narwankar ◽  
M. R. Chandrachood ◽  
M. Fendorf ◽  
D. E. Morris ◽  
A. P. B. Sinha ◽  
...  
Keyword(s):  
High Resolution ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Defect Density ◽  
High Density ◽  
Planar Defects ◽  
High Defect Density ◽  
Density Enhancement ◽  
High Resolution Tem

ABSTRACTSamples with the stoichiometry (CaxY1−x)Ba2Cu4O8, x = 0, 0.1 were synthesized at P(O2) = 25 and 200 bar. High Resolution TEM images for the samples synthesized at 25 bar show a high density of planar defects as compared to almost defect free microstructure of Ca0.1Y0.9Ba2Cu4O8 synthesized at 200 bar. The intragrain critical current density of the high defect density samples is however about 100 times lower that that of Ca0.1Y0.9Ba2Cu4O8 synthesized at P(O2) = 200 bar.

CHARACTERIZATION OF CdZnTe CRYSTALS BY RESISTIVITY MEASUREMENTS AND CHEMICAL ETCHING

2002 ◽  
Vol 16 (17) ◽  
pp. 615-619
Author(s):  
Q. R. HOU ◽  
Y. B. CHEN ◽  
H. CHEN ◽  
Y. J. HE ◽  
K. Y. LIU
Keyword(s):  
Chemical Etching ◽  
Defect Density ◽  
Radiation Detectors ◽  
High Quality ◽  
Density Region ◽  
Resistivity Measurements ◽  
High Defect Density ◽  
Vertical Bridgman ◽  
Defect Densities

CdZnTe crystals grown by the vertical Bridgman method were characterized by measuring their resistivity and chemical etching in the well-known Nakagawa etchant (3HF:2H2O2:2H2O, vol./vol.). It was found that the resistivity of the CdZnTe crystals was between 4.33 × 103 and 8.50 × 106 Ωcm. Defect densities were much higher around the periphery of some CdZnTe samples due to the influence of mechanical stress caused by contact with the crucible walls during the CdZnTe crystal growth. The sizes of the high defect density region ranged from 1.8 to 2.8 mm. Such high defect density region should be eliminated in order to make high-quality radiation detectors or prepare the substrates for the epitaxial growth of HgCdTe.

scholarly journals Current transport through ohmic contacts to indiume nitride with high defect density

2018 ◽  
Vol 25 (3) ◽  
pp. 486-489
Author(s):  
P.O. Sai ◽  
Keyword(s):  
Ohmic Contacts ◽  
Defect Density ◽  
Current Transport ◽  
High Defect Density

scholarly journals External and Internal Interface-Controlled Trimetallic PtCuNi Nanoframes with High Defect Density for Enhanced Electrooxidation of Liquid Fuels

2020 ◽  
Vol 32 (4) ◽  
pp. 1581-1594 ◽  
Author(s):  
Daowei Gao ◽  
Shaohan Yang ◽  
Lifei Xi ◽  
Marcel Risch ◽  
Lianghao Song ◽  
...  
Keyword(s):  
Defect Density ◽  
Liquid Fuels ◽  
Internal Interface ◽  
High Defect Density

N/S dual-doped graphene with high defect density for enhanced supercapacitor properties

2020 ◽  
Vol 45 (1) ◽  
pp. 112-122 ◽  
Author(s):  
Ziqing Li ◽  
Wenxiu He ◽  
Xixin Wang ◽  
Xiaoliu Wang ◽  
Min Song ◽  
...  
Keyword(s):  
Defect Density ◽  
High Defect Density ◽  
Doped Graphene

Numerical fitting of transient decays in the high defect density limit

1993 ◽  
Vol 74 (11) ◽  
pp. 6636-6641
Author(s):  
S. Yang ◽  
C. D. Lamp
Keyword(s):  
Defect Density ◽  
Density Limit ◽  
High Defect Density ◽  
Numerical Fitting
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