Giant Enhancement of Fluorescence Emission by Fluorination of Porous Graphene with High Defect Density and Subsequent Application as Fe3+ Ion Sensors

AbstractThe concentration of polysilane chains (SiH2)n, where n≥1, is estimated for higher quality hydrogenated amorphous silicon (a-Si:H) by pulsed proton nuclear magnetic resonance techniques (1H NMR). Our measurements indicate the minimum hydrogen content of approximately 10% of the total hydrogen is in the (SiH2)n configuration. Similar measurements in a high defect density sample (1017 silicon dangling bond defects cm-3) show that (SiH2)n sites account for ~ 15% of the total hydrogen. While the (SiH2)n infrared absorption (IR) modes are observed in the highly defective sample, no such modes are seen in the higher quality material. The results indicate that a significant amount of the total hydrogen content exists as (SiH2)n regardless of film quality.

Download Full-text

Current transport through ohmic contacts to indiume nitride with high defect density

2017 IEEE 7th International Conference Nanomaterials: Application & Properties (NAP) ◽

10.1109/nap.2017.8190156 ◽

2017 ◽

Author(s):

P. O. Sai ◽

N. V. Safriuk ◽

V. V. Shynkarenko

Keyword(s):

Ohmic Contacts ◽

Defect Density ◽

Current Transport ◽

High Defect Density

Download Full-text

Studies of Critical Current Density Enhancement in (Cax Y1−x)Ba2Cu4O8 (1:2:4)

MRS Proceedings ◽

10.1557/proc-235-665 ◽

1991 ◽

Vol 235 ◽

Author(s):

P. K. Narwankar ◽

M. R. Chandrachood ◽

M. Fendorf ◽

D. E. Morris ◽

A. P. B. Sinha ◽

...

Keyword(s):

High Resolution ◽

Critical Current Density ◽

Critical Current ◽

Current Density ◽

Defect Density ◽

High Density ◽

Planar Defects ◽

High Defect Density ◽

Density Enhancement ◽

High Resolution Tem

ABSTRACTSamples with the stoichiometry (CaxY1−x)Ba2Cu4O8, x = 0, 0.1 were synthesized at P(O2) = 25 and 200 bar. High Resolution TEM images for the samples synthesized at 25 bar show a high density of planar defects as compared to almost defect free microstructure of Ca0.1Y0.9Ba2Cu4O8 synthesized at 200 bar. The intragrain critical current density of the high defect density samples is however about 100 times lower that that of Ca0.1Y0.9Ba2Cu4O8 synthesized at P(O2) = 200 bar.

Download Full-text

CHARACTERIZATION OF CdZnTe CRYSTALS BY RESISTIVITY MEASUREMENTS AND CHEMICAL ETCHING

Modern Physics Letters B ◽

10.1142/s0217984902004226 ◽

2002 ◽

Vol 16 (17) ◽

pp. 615-619

Author(s):

Q. R. HOU ◽

Y. B. CHEN ◽

H. CHEN ◽

Y. J. HE ◽

K. Y. LIU

Keyword(s):

Chemical Etching ◽

Defect Density ◽

Radiation Detectors ◽

High Quality ◽

Density Region ◽

Resistivity Measurements ◽

High Defect Density ◽

Vertical Bridgman ◽

Defect Densities

CdZnTe crystals grown by the vertical Bridgman method were characterized by measuring their resistivity and chemical etching in the well-known Nakagawa etchant (3HF:2H2O2:2H2O, vol./vol.). It was found that the resistivity of the CdZnTe crystals was between 4.33 × 103 and 8.50 × 106 Ωcm. Defect densities were much higher around the periphery of some CdZnTe samples due to the influence of mechanical stress caused by contact with the crucible walls during the CdZnTe crystal growth. The sizes of the high defect density region ranged from 1.8 to 2.8 mm. Such high defect density region should be eliminated in order to make high-quality radiation detectors or prepare the substrates for the epitaxial growth of HgCdTe.

Download Full-text