CHARACTERIZATION OF CdZnTe CRYSTALS BY RESISTIVITY MEASUREMENTS AND CHEMICAL ETCHING

2002 ◽  
Vol 16 (17) ◽  
pp. 615-619
Author(s):  
Q. R. HOU ◽  
Y. B. CHEN ◽  
H. CHEN ◽  
Y. J. HE ◽  
K. Y. LIU
Keyword(s):  
Chemical Etching ◽  
Defect Density ◽  
Radiation Detectors ◽  
High Quality ◽  
Density Region ◽  
Resistivity Measurements ◽  
High Defect Density ◽  
Vertical Bridgman ◽  
Defect Densities

CdZnTe crystals grown by the vertical Bridgman method were characterized by measuring their resistivity and chemical etching in the well-known Nakagawa etchant (3HF:2H2O2:2H2O, vol./vol.). It was found that the resistivity of the CdZnTe crystals was between 4.33 × 103 and 8.50 × 106 Ωcm. Defect densities were much higher around the periphery of some CdZnTe samples due to the influence of mechanical stress caused by contact with the crucible walls during the CdZnTe crystal growth. The sizes of the high defect density region ranged from 1.8 to 2.8 mm. Such high defect density region should be eliminated in order to make high-quality radiation detectors or prepare the substrates for the epitaxial growth of HgCdTe.

Growth and Characterization of 2″ 6H-Silicon Carbide

1999 ◽  
Vol 572 ◽  
Author(s):  
Erwin Schmitt ◽  
Robert Eckstein ◽  
Martin Kölbl ◽  
Amd-Dietrich Weber
Keyword(s):  
Silicon Carbide ◽  
Boundary Conditions ◽  
Growth Process ◽  
Defect Density ◽  
Crystal Quality ◽  
Process Conditions ◽  
Thermal Boundary Conditions ◽  
Sublimation Growth ◽  
Defect Densities

ABSTRACTFor the growth of 2″ 6H-SiC a sublimation growth process was developed. By different means of characterization crystal quality was evaluated. Higher defect densities, mainly in the periphery of the crystals were found to be correlated to unfavourable process conditions. Improvement of thermal boundary conditions lead to a decreased defect density and better homogeneity over the wafer area.

scholarly journals Characteristics of TlBr single crystals grown using the vertical Bridgman-Stockbarger method for semiconductor-based radiation detector applications

2016 ◽  
Vol 34 (2) ◽  
pp. 297-301 ◽  
Author(s):  
Dong Jin Kim ◽  
Joon-Ho Oh ◽  
Han Soo Kim ◽  
Young Soo Kim ◽  
Manhee Jeong ◽  
...  
Keyword(s):  
Single Crystals ◽  
High Performance ◽  
Radiation Detector ◽  
Radiation Detectors ◽  
Middle Part ◽  
High Quality ◽  
Single Crystalline ◽  
Crystalline Sample ◽  
Vertical Bridgman ◽  
Stockbarger Method

AbstractTlBr single crystals grown using the vertical Bridgman-Stockbarger method were characterized for semiconductor based radiation detector applications. It has been shown that the vertical Bridgman-Stockbarger method is effective to grow high-quality single crystalline ingots of TlBr. The TlBr single crystalline sample, which was located 6 cm from the tip of the ingot, exhibited lower impurity concentration, higher crystalline quality, high enough bandgap (>2.7 eV), and higher resistivity (2.5 × 1011 Ω·cm) which enables using the fabricated samples from the middle part of the TlBr ingot for fabricating high performance semiconductor radiation detectors.

Electrical characterization of low defect density nonpolar (11¯20) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)

2008 ◽  
Vol 23 (2) ◽  
pp. 551-555 ◽  
Author(s):  
Bilge Imer ◽  
Benjamin Haskell ◽  
Siddharth Rajan ◽  
Stacia Keller ◽  
Umesh K. Mishra ◽  
...  
Keyword(s):  
Metalorganic Chemical Vapor Deposition ◽  
Defect Density ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Extended Defects ◽  
Electrical Characteristics ◽  
Lateral Epitaxial Overgrowth ◽  
High Defect Density ◽  
Si Doped

We studied the effect of extended defects on electrical characteristics of Si doped n-type nonpolar a-plane GaN films. The n-type GaN layers were grown on co-loaded reduced defect density sidewall lateral epitaxial overgrowth (SLEO) a-plane GaN templates and high defect density planar a-plane GaN templates by metalorganic chemical vapor deposition (MOCVD). The highest conductivity value was observed at the carrier concentration of 1.05 × 1019 cm−3 as 261.12 cm2/Vs for SLEO a-GaN and 106.77 cm2/Vs for the planar a-plane GaN samples. At the same doping level, the carrier compensation for SLEO samples was ∼12% less than planar samples.

Growth and Characterization of CdTe Single Crystals Prepared by the “Liquinert Processed” Vertical Bridgman Method for Radiation Detectors

2019 ◽  
Vol 19 (11) ◽  
pp. 6218-6223 ◽  
Author(s):  
Ryotaro Sekine ◽  
Mizuki Uenomachi ◽  
Hiroki Asafusa ◽  
Kazuyasu Tokiwa ◽  
Kenji Shimazoe ◽  
...  
Keyword(s):  
Single Crystals ◽  
Radiation Detectors ◽  
Bridgman Method ◽  
Vertical Bridgman Method ◽  
Vertical Bridgman

scholarly journals Editorial for Special Issue “Historical Mineral Pigments”

Minerals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 237
Author(s):  
Carolina Cardell ◽  
Jose Santiago Pozo-Antonio
Keyword(s):  
Chemical Characterization ◽  
Glass Enamel ◽  
Special Issue ◽  
High Quality ◽  
Physical Chemical ◽  
Scientific Disciplines ◽  
Natural And Synthetic

The physical–chemical characterization of natural and synthetic historical inorganic and mineral pigments, which may be found embedded in paintings (real or mock-ups), glass, enamel, ceramics, beads, tesserae, etc., as well as their alteration under different decay scenarios, is a demanding line of investigation. This field of research is now both well established and dynamic, as revealed by the numerous publications in high-quality journals of varied scientific disciplines. [...]

scholarly journals Vocabulary of radioanalytical methods (IUPAC Recommendations 2020)

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Zhifang Chai ◽  
Amares Chatt ◽  
Peter Bode ◽  
Jan Kučera ◽  
Robert Greenberg ◽  
...  
Keyword(s):  
Nuclear Reactions ◽  
Hyperfine Interactions ◽  
Chemical Species ◽  
Radiation Detectors ◽  
Nuclear Analysis ◽  
Characterization Of Materials ◽  
Nuclear Effects ◽  
Nuclear Processes ◽  
Radioanalytical Methods

AbstractThese recommendations are a vocabulary of basic radioanalytical terms which are relevant to radioanalysis, nuclear analysis and related techniques. Radioanalytical methods consider all nuclear-related techniques for the characterization of materials where ‘characterization’ refers to compositional (in terms of the identity and quantity of specified elements, nuclides, and their chemical species) and structural (in terms of location, dislocation, etc. of specified elements, nuclides, and their species) analyses, involving nuclear processes (nuclear reactions, nuclear radiations, etc.), nuclear techniques (reactors, accelerators, radiation detectors, etc.), and nuclear effects (hyperfine interactions, etc.). In the present compilation, basic radioanalytical terms are included which are relevant to radioanalysis, nuclear analysis and related techniques.

Characterization of the defect density states in MoOx for c-Si solar cell applications

2021 ◽  
pp. 108135
Author(s):  
D. Scirè ◽  
R. Macaluso ◽  
M. Mosca ◽  
S. Mirabella ◽  
A. Gulino ◽  
...  
Keyword(s):  
Solar Cell ◽  
Defect Density ◽  
Si Solar Cell

Growth and Characterization of High Quality Epitaxial GaN on ZnO(0001) by Reactive Molecular Epitaxy

1998 ◽  
Vol 264-268 ◽  
pp. 1201-1204
Author(s):  
F. Hamdani ◽  
M. Yeadon ◽  
David John Smith ◽  
H. Tang ◽  
W. Kim ◽  
...  
Keyword(s):  
High Quality

Fabrication and Characterization of Si Nano-Columns by Femtosecond Laser

2012 ◽  
Vol 16 ◽  
pp. 15-20 ◽  
Author(s):  
Omid Tayefeh Ghalehbeygi ◽  
Vural Kara ◽  
Levent Trabzon ◽  
Selcuk Akturk ◽  
Huseyin Kizil
Keyword(s):  
Laser Ablation ◽  
Femtosecond Laser ◽  
Laser Beam ◽  
Chemical Etching ◽  
Silicon Surface ◽  
Laser Pulses ◽  
Laser Beam Profile ◽  
Fs Laser ◽  
Fabrication And Characterization

We fabricated Si Nano-columns by a femtosecond laser with various wavelengths and process parameters, whilst the specimen was submerged in water. The experiments were carried out by three types of wavelengths i.e. 1030 nm, 515nm, 343nm, with 500 fs laser pulses. The scales of these spikes are much smaller than micro spikes that are constructed by laser irradiation of silicon surface in vacuum or gases like SF6, Cl2. The Si nano-columns of 300 nm or less in width were characterized by SEM measurements. The formation of these Si Nano-columns that were revealed by SEM observation, indicates chemical etching with laser ablation occurred when surface exposed by laser beam. We observed 200 nm spikes height at the center of laser beam profile and the ones uniform in height at lateral incident area.

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