Improvement of the Optoelectrical Properties of a Transparent Conductive Polymer via the Introduction of ITO Nanoparticles and Its Application in Crystalline Silicon/Organic Heterojunction Solar Cells

2021 ◽  
Author(s):  
Yonggang Zhao ◽  
Li Zhang ◽  
Mingzhi Lv ◽  
Chaohui Jiao ◽  
Pu Cheng ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Conductive Polymer ◽  
Heterojunction Solar Cells ◽  
Ito Nanoparticles

p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD

2015 ◽  
Vol 1770 ◽  
pp. 7-12 ◽  
Author(s):  
Henriette A. Gatz ◽  
Yinghuan Kuang ◽  
Marcel A. Verheijen ◽  
Jatin K. Rath ◽  
Wilhelmus M.M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Material Properties ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

ABSTRACTSilicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor deposition (rf PECVD), on an amorphous silicon layer.20 nm thick nanocrystalline layers were successfully grown on a 5 nm a-Si:H layer. The effect of different ratios of trimethylboron to silane gas flow rates on the material properties were investigated, yielding an optimized material with a conductivity in the lateral direction of 7.9×10-4 S/cm combined with a band gap of E04 = 2.33 eV. Despite its larger thickness as compared to a conventional window a-Si:H p-layer, the novel layer stack of a-Si:H(i)/nc-SiOx:H(p) shows significantly enhanced transmission compared to the stack with a conventional a-Si:H(p) emitter. Altogether, the chosen material exhibits promising characteristics for implementation in SHJ solar cells.

scholarly journals Effect of Hydrogen Content in Intrinsic a-Si:H on Performances of Heterojunction Solar Cells

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Yun-Shao Cho ◽  
Chia-Hsun Hsu ◽  
Shui-Yang Lien ◽  
Dong-Sing Wuu ◽  
In-Cha Hsieh
Keyword(s):  
Solar Cells ◽  
Hydrogen Content ◽  
Crystalline Silicon ◽  
Phase Particle ◽  
Optical Emission ◽  
Point Of View ◽  
Experimental Result ◽  
Heterojunction Solar Cells ◽  
Hydrogenated Amorphous ◽  
Silane Plasma

Influences of hydrogen content in intrinsic hydrogenated amorphous silicon (i-a-Si:H) on performances of heterojunction (HJ) solar cells are investigated. The simulation result shows that in the range of 0–18% of the i-layer hydrogen content, solar cells with higher i-layer hydrogen content can have higher degree of dangling bond passivation on single crystalline silicon (c-Si) surface. In addition, the experimental result shows that HJ solar cells with a low hydrogen content have a poor a-Si:H/c-Si interface. The deteriorate interface is assumed to be attributed to (i) voids created by insufficiently passivated c-Si surface dangling bonds, (ii) voids formed by SiH2clusters, and (iii) Si particles caused by gas phase particle formation in silane plasma. The proposed assumption is well supported and explained from the plasma point of view using optical emission spectroscopy.

Improving the performance of amorphous and crystalline silicon heterojunction solar cells by monitoring surface passivation

2012 ◽  
Vol 358 (17) ◽  
pp. 2245-2248 ◽  
Author(s):  
J.W.A. Schüttauf ◽  
C.H.M. van der Werf ◽  
I.M. Kielen ◽  
W.G.J.H.M. van Sark ◽  
J.K. Rath ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Heterojunction Solar Cells ◽  
Silicon Heterojunction Solar Cells
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