Growth Mechanisms and Morphology Engineering of Atomic Layer-Deposited WS2

Hydrogen peroxide (H2O2) is widely used as a green oxidant for varying applications. Electrosynthesis is an economical and environmentally-friendly strategy to directly produce H2O2. Its practical production is hindered, however,...

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Nucleation and growth mechanisms of Al2O3 atomic layer deposition on synthetic polycrystalline MoS2

The Journal of Chemical Physics ◽

10.1063/1.4967406 ◽

2017 ◽

Vol 146 (5) ◽

pp. 052810 ◽

Cited By ~ 26

Author(s):

H. Zhang ◽

D. Chiappe ◽

J. Meersschaut ◽

T. Conard ◽

A. Franquet ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Nucleation And Growth ◽

Growth Mechanisms ◽

Layer Deposition ◽

Nucleation And Growth Mechanisms

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The Growth Mechanisms of Atomic Layer Deposition: An Overview

Eksergi ◽

10.31315/e.v17i2.3714 ◽

2020 ◽

Vol 17 (2) ◽

pp. 56

Author(s):

Edy Riyanto ◽

Erie Martides ◽

Endro Junianto ◽

Budi Prawara

Keyword(s):

Thin Film ◽

Theoretical Model ◽

Atomic Layer Deposition ◽

Surface Chemistry ◽

Film Growth ◽

Atomic Layer ◽

Deposition Process ◽

Thin Film Growth ◽

Growth Mechanisms ◽

Layer Deposition

In this review, the discussion emphasized on the growth mechanisms of atomic layer deposition which consists of a theoretical model and experimentally growth as well as the measurement testing as evidences. The deposition process description with some testing evidences can be used to facilitate in the effort to understand the basic concept of ALD growth mechanisms. Some metal oxides like Al2O3, HfO2, and TiO2 with these employed precursors are typically used for the detailed illustration during the reaction steps. Although the surface chemistry of ALD process has been well understood, systematic description which combine a theoretical and experimentally growth mechanism is still missing. This paper aims to provide a better understanding of ALD growth mechanisms and surface chemistry which eventually able to contribute on the thin film growth processing.

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Understanding the Growth Mechanisms of Multilayered Systems in Atomic Layer Deposition Process

Chemistry of Materials ◽

10.1021/acs.chemmater.7b05128 ◽

2018 ◽

Vol 30 (6) ◽

pp. 1971-1979 ◽

Cited By ~ 8

Author(s):

Christoph W. Wiegand ◽

René Faust ◽

Alexander Meinhardt ◽

Robert H. Blick ◽

Robert Zierold ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Deposition Process ◽

Growth Mechanisms ◽

Atomic Layer Deposition Process ◽

Layer Deposition ◽

Multilayered Systems

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Initial Growth Mechanism of Atomic Layer Deposited Hafnium Dioxide Using Cyclopentadienyl-Type Precursor: A Density Functional Theory Study

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1120-1121.16 ◽

2015 ◽

Vol 1120-1121 ◽

pp. 16-20

Author(s):

Guang Fen Zhou ◽

Jie Ren

Keyword(s):

Density Functional ◽

Activation Barrier ◽

Atomic Layer ◽

Hafnium Dioxide ◽

Initial Growth ◽

Elimination Reaction ◽

Growth Mechanisms ◽

Functional Theory ◽

Barrier Analysis ◽

Layer Deposition

The initial growth mechanisms of atomic layer deposition of Hafnium dioxide thin films using Cp2Hf (CH3)2 precursor have been investigated. The calculations show that CH4 elimination reaction is energetically more favorable than CpH elimination reaction. As a result, the two ―CH3 ligands of Cp2Hf (CH3)2 may be dissociated prior to the two ―Cp rings. According to the activation barrier analysis, one CpH elimination may occurs sequentially following the first CH4 elimination reaction. During the pulse of Cp2Hf (CH3)2 precursor, the byproduct CH4 and a small amount of CpH are released.

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