Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors

ACS Applied Materials & Interfaces ◽

10.1021/acsami.8b08959 ◽

2018 ◽

Vol 10 (34) ◽

pp. 28780-28788 ◽

Author(s):

Teerayut Uwanno ◽

Takashi Taniguchi ◽

Kenji Watanabe ◽

Kosuke Nagashio

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Bilayer Graphene ◽

Two Dimensional ◽

Graphene Interface ◽

Heterostructure Field Effect Transistors

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Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

Applied Physics A ◽

10.1007/s003390100978 ◽

2002 ◽

Vol 75 (3) ◽

pp. 387-389 ◽

Author(s):

R.M. Chu ◽

Y.D. Zheng ◽

Y.G. Zhou ◽

P. Han ◽

B. Shen ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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Doping Design and Two-Dimensional Electron Gas Density in AlGaN/GaN Heterostructure Field-Effect Transistors for High-Power Applications

10.7567/ssdm.2002.g-1-5 ◽

2002 ◽

Author(s):

Narihiko Maeda ◽

Kotaro Tsubaki ◽

Tadashi Saitoh ◽

Naoki Kobayashi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN

Applied Physics Letters ◽

10.1063/1.4875916 ◽

2014 ◽

Vol 104 (19) ◽

pp. 193506 ◽

Author(s):

Guowang Li ◽

Bo Song ◽

Satyaki Ganguly ◽

Mingda Zhu ◽

Ronghua Wang ◽

...

Keyword(s):

Quantum Wells ◽

Field Effect ◽

Field Effect Transistors ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Gases ◽

Double Heterostructure ◽

Strained Quantum Wells ◽

Heterostructure Field Effect Transistors

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Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/47/17/175103 ◽

2014 ◽

Vol 47 (17) ◽

pp. 175103 ◽

Author(s):

B Reuters ◽

H Hahn ◽

A Pooth ◽

B Holländer ◽

U Breuer ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Two Dimensional ◽

Heterostructure Field Effect Transistors

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Single-particle energy states in the two-dimensional electron gas of GaN-based single heterostructure field effect transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/17/11/308 ◽

2002 ◽

Vol 17 (11) ◽

pp. 1180-1183 ◽

Author(s):

L M Gaggero-Sager ◽

M E Mora-Ramos

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Particle Energy ◽

Two Dimensional ◽

Single Particle Energy ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas

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Undoped high mobility two-dimensional hole-channel GaAs∕AlxGa1−xAs heterostructure field-effect transistors with atomic-layer-deposited dielectric

Applied Physics Letters ◽

10.1063/1.2714094 ◽

2007 ◽

Vol 90 (11) ◽

pp. 112113 ◽

Author(s):

T. M. Lu ◽

D. R. Luhman ◽

K. Lai ◽

D. C. Tsui ◽

L. N. Pfeiffer ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Atomic Layer ◽

Two Dimensional ◽

Heterostructure Field Effect Transistors

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Two-dimensional electron-gas density in AlXGa1−XN/GaN heterostructure field-effect transistors

Applied Physics Letters ◽

10.1063/1.122305 ◽

1998 ◽

Vol 73 (13) ◽

pp. 1856-1858 ◽

Author(s):

Narihiko Maeda ◽

Toshio Nishida ◽

Naoki Kobayashi ◽

Masaaki Tomizawa

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Gas Density ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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High-Performance and Ultralow-Noise Two-Dimensional Heterostructure Field-Effect Transistors with One-Dimensional Electrical Contacts

ACS Applied Electronic Materials ◽

10.1021/acsaelm.1c00595 ◽

2021 ◽

Vol 3 (9) ◽

pp. 4126-4134

Author(s):

Aroop K. Behera ◽

Charles Thomas Harris ◽

Douglas V. Pete ◽

Collin J. Delker ◽

Per Erik Vullum ◽

...

Keyword(s):

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Electrical Contacts ◽

Two Dimensional ◽

One Dimensional ◽

Heterostructure Field Effect Transistors

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Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

ACS Nano ◽

10.1021/acsnano.9b08489 ◽

2020 ◽

Vol 14 (2) ◽

pp. 1982-1989 ◽

Author(s):

Enrique G. Marin ◽

Damiano Marian ◽

Marta Perucchini ◽

Gianluca Fiori ◽

Giuseppe Iannaccone

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Two Dimensional ◽

Varying Thickness ◽

Energy Filtering ◽

Heterostructure Field Effect Transistors ◽

Lateral Heterostructure

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A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

Superlattices and Microstructures ◽

10.1016/j.spmi.2017.08.030 ◽

2017 ◽

Vol 110 ◽

pp. 289-295 ◽

Author(s):

Peng Cui ◽

Zhaojun Lin ◽

Chen Fu ◽

Yan Liu ◽

Yuanjie Lv

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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