Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces
2014 ◽
Vol 47
(17)
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pp. 175103
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2002 ◽
2018 ◽
Vol 10
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pp. 28780-28788
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2002 ◽
Vol 17
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pp. 1180-1183
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2017 ◽
Vol 110
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pp. 289-295
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