Ultralow-Noise Organic Transistors Based on Polymeric Gate Dielectrics with Self-Assembled Modifiers

2019 ◽  
Vol 11 (44) ◽  
pp. 41561-41569 ◽  
Author(s):  
Masaya Kondo ◽  
Takafumi Uemura ◽  
Fumitaka Ishiwari ◽  
Takashi Kajitani ◽  
Yoshiaki Shoji ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Organic Transistors ◽  
Self Assembled

Mixed Self-Assembled Monolayer Gate Dielectrics for Continuous Threshold Voltage Control in Organic Transistors and Circuits

2010 ◽  
Vol 22 (40) ◽  
pp. 4489-4493 ◽  
Author(s):  
Ute Zschieschang ◽  
Frederik Ante ◽  
Matthias Schlörholz ◽  
Maike Schmidt ◽  
Klaus Kern ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Dielectrics ◽  
Voltage Control ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Self Assembled

Solution Processed Self-Assembled Monolayer Gate Dielectrics for Low-Voltage Organic Transistors

2008 ◽  
Vol 1114 ◽  
Author(s):  
James Ball ◽  
Paul H Wöbkenberg ◽  
Florian Colléaux ◽  
Floris B Kooistra ◽  
Jan C Hummelen ◽  
...  
Keyword(s):  
Surface Energy ◽  
Organic Semiconductors ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
High Volume ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Solution Processed ◽  
Self Assembled

AbstractLow-voltage organic transistors are sought for implementation in high volume low-power portable electronics of the future. Here we assess the suitability of three phosphonic acid based self-assembling molecules for use as ultra-thin gate dielectrics in low-voltage solution processable organic field-effect transistors. In particular, monolayers of phosphonohexadecanoic acid in metal-monolayer-metal type sandwich devices are shown to exhibit low leakage currents and high geometrical capacitance comparable to previously demonstrated self-assembled monolayer (SAM) type dielectrics but with a higher surface energy. The improved surface energy characteristics enable processing of a wider range of organic semiconductors from solution. Transistors based on a number of solution-processed organic semiconductors with operating voltages below 2 V are also demonstrated.

1 Volt organic transistors with mixed self-assembled monolayer/Al2O3 gate dielectrics

2015 ◽  
Vol 26 ◽  
pp. 20-24 ◽  
Author(s):  
Barbara Urasinska-Wojcik ◽  
Nicolas Cocherel ◽  
Richard Wilson ◽  
Jeremy Burroughes ◽  
Jesse Opoku ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Self Assembled

Solution processed low-voltage organic transistors based on self-assembled monolayer gate dielectrics

2009 ◽  
Author(s):  
James M. Ball ◽  
Paul H. Wöbkenberg ◽  
Florian Colléaux ◽  
Jeremy Smith ◽  
Donal D. C. Bradley ◽  
...  
Keyword(s):  
Low Voltage ◽  
Gate Dielectrics ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Solution Processed ◽  
Self Assembled

scholarly journals Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics

2008 ◽  
Vol 93 (1) ◽  
pp. 013303 ◽  
Author(s):  
Paul H. Wöbkenberg ◽  
James Ball ◽  
Floris B. Kooistra ◽  
Jan C. Hummelen ◽  
Dago M. de Leeuw ◽  
...  
Keyword(s):  
Low Voltage ◽  
Gate Dielectrics ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Solution Processed ◽  
Self Assembled

HighKCapacitors and OFET Gate Dielectrics from Self-Assembled BaTiO3and (Ba,Sr)TiO3Nanocrystals in the Superparaelectric Limit

2010 ◽  
Vol 20 (4) ◽  
pp. 554-560 ◽  
Author(s):  
Limin Huang ◽  
Zhang Jia ◽  
Ioannis Kymissis ◽  
Stephen O'Brien
Keyword(s):  
Gate Dielectrics ◽  
Self Assembled
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