Mixed Self-Assembled Monolayer Gate Dielectrics for Continuous Threshold Voltage Control in Organic Transistors and Circuits

2010 ◽  
Vol 22 (40) ◽  
pp. 4489-4493 ◽  
Author(s):  
Ute Zschieschang ◽  
Frederik Ante ◽  
Matthias Schlörholz ◽  
Maike Schmidt ◽  
Klaus Kern ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Dielectrics ◽  
Voltage Control ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Self Assembled

Solution Processed Self-Assembled Monolayer Gate Dielectrics for Low-Voltage Organic Transistors

2008 ◽  
Vol 1114 ◽  
Author(s):  
James Ball ◽  
Paul H Wöbkenberg ◽  
Florian Colléaux ◽  
Floris B Kooistra ◽  
Jan C Hummelen ◽  
...  
Keyword(s):  
Surface Energy ◽  
Organic Semiconductors ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
High Volume ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Solution Processed ◽  
Self Assembled

AbstractLow-voltage organic transistors are sought for implementation in high volume low-power portable electronics of the future. Here we assess the suitability of three phosphonic acid based self-assembling molecules for use as ultra-thin gate dielectrics in low-voltage solution processable organic field-effect transistors. In particular, monolayers of phosphonohexadecanoic acid in metal-monolayer-metal type sandwich devices are shown to exhibit low leakage currents and high geometrical capacitance comparable to previously demonstrated self-assembled monolayer (SAM) type dielectrics but with a higher surface energy. The improved surface energy characteristics enable processing of a wider range of organic semiconductors from solution. Transistors based on a number of solution-processed organic semiconductors with operating voltages below 2 V are also demonstrated.

1 Volt organic transistors with mixed self-assembled monolayer/Al2O3 gate dielectrics

2015 ◽  
Vol 26 ◽  
pp. 20-24 ◽  
Author(s):  
Barbara Urasinska-Wojcik ◽  
Nicolas Cocherel ◽  
Richard Wilson ◽  
Jeremy Burroughes ◽  
Jesse Opoku ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Self Assembled

Solution processed low-voltage organic transistors based on self-assembled monolayer gate dielectrics

2009 ◽  
Author(s):  
James M. Ball ◽  
Paul H. Wöbkenberg ◽  
Florian Colléaux ◽  
Jeremy Smith ◽  
Donal D. C. Bradley ◽  
...  
Keyword(s):  
Low Voltage ◽  
Gate Dielectrics ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Solution Processed ◽  
Self Assembled

scholarly journals Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics

2008 ◽  
Vol 93 (1) ◽  
pp. 013303 ◽  
Author(s):  
Paul H. Wöbkenberg ◽  
James Ball ◽  
Floris B. Kooistra ◽  
Jan C. Hummelen ◽  
Dago M. de Leeuw ◽  
...  
Keyword(s):  
Low Voltage ◽  
Gate Dielectrics ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Solution Processed ◽  
Self Assembled

Ultralow-Noise Organic Transistors Based on Polymeric Gate Dielectrics with Self-Assembled Modifiers

2019 ◽  
Vol 11 (44) ◽  
pp. 41561-41569 ◽  
Author(s):  
Masaya Kondo ◽  
Takafumi Uemura ◽  
Fumitaka Ishiwari ◽  
Takashi Kajitani ◽  
Yoshiaki Shoji ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Organic Transistors ◽  
Self Assembled

Performances of Sexithiophene Based Thin-Film Transistor Using Self-Assembled Monolayers

1997 ◽  
Vol 488 ◽  
Author(s):  
J. Collet ◽  
O. Tharaud ◽  
C. Legrand ◽  
A. Chapoton ◽  
D. Vuillaume
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
High Performance ◽  
Film Formation ◽  
Substrate Surface ◽  
High Surface ◽  
Thin Film Transistor ◽  
Subthreshold Slope ◽  
Self Assembled Monolayer ◽  
Self Assembled

AbstractHigh performance thin-film transistors (TFT) made of conducting oligomers are obtained when the organic films are well ordered at a molecular level. Highly ordered films are obtained provided that oligomers have a sufficient mobility on the substrate surface during film formation. One possible way to fulfill such a condition is to evaporate oligomers on heated substrates [1,2]. In this work, we suggest that a high surface mobility is obtained by a chemical functionalization of the silicon dioxide surface, and the corresponding improvements of the TFT performances are evidenced. A self-assembled monolayer of octadecyltrichlorosilane (OTS) was deposited on the SiO2 by chemisorption from solution before the evaporation of sexithiophene film. Room temperature current-voltage measurements indicate that the presence of the OTS monolayer improves TFT performances : threshold voltage is decreased, subthreshold slope is decreased, a high current ratio Ion/Ioff is obtained for a reduced gate voltage excursion, the fieldeffect mobility is slightly increased. We have also fabricated and characterized a nanometer scale organic FET (gate length = 50 nm) made of 6T films and only with a self-assembled monolayer as the insulating film between the degenerated silicon substrate (gate) and the conducting channel (no thick SiO2, we call it « oxide-free » organic FET). Performances of this nanometer size organic FETs are the following : subthreshold slope of 0.35V/dec, threshold voltage of −1.3V, effective mobility of 2×10−4 cm2/V.s.

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