Artificially Fabricated Subgap States for Visible-Light Absorption in Indium–Gallium–Zinc Oxide Phototransistor with Solution-Processed Oxide Absorption Layer

2019 ◽  
Vol 11 (42) ◽  
pp. 38964-38972 ◽  
Author(s):  
Jusung Chung ◽  
Young Jun Tak ◽  
Won-Gi Kim ◽  
Byung Ha Kang ◽  
Hyun Jae Kim
Keyword(s):  
Zinc Oxide ◽  
Visible Light ◽  
Light Absorption ◽  
Indium Gallium Zinc Oxide ◽  
Solution Processed ◽  
Visible Light Absorption ◽  
Absorption Layer ◽  
Indium Gallium

Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer

2010 ◽  
Vol 97 (20) ◽  
pp. 203506 ◽  
Author(s):  
Hsiao-Wen Zan ◽  
Wei-Tsung Chen ◽  
Hsiu-Wen Hsueh ◽  
Shih-Chin Kao ◽  
Ming-Che Ku ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Visible Light ◽  
Light Absorption ◽  
Indium Gallium Zinc Oxide ◽  
Absorption Layer ◽  
Indium Gallium

Fabrication of indium gallium zinc oxide phototransistors via oxide-mesh insertion for visible light detection

2020 ◽  
Vol 8 (1) ◽  
pp. 165-172 ◽  
Author(s):  
Dongwoo Kim ◽  
Yeong-gyu Kim ◽  
Byung Ha Kang ◽  
Jin Hyeok Lee ◽  
Jusung Chung ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Visible Light ◽  
Oxygen Vacancies ◽  
Indium Gallium Zinc Oxide ◽  
Light Detection ◽  
Indium Gallium

Visible light detection of oxide phototransistors via insertion of an oxide-mesh inside the channel creating oxygen vacancies that increase subgap states.

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