Filter-Free Selective Light Monitoring by Organic Field-Effect Transistor Memories with a Tunable Blend Charge-Trapping Layer

2019 ◽  
Vol 11 (43) ◽  
pp. 40366-40371 ◽  
Author(s):  
Lin-Xi Zhang ◽  
Xu Gao ◽  
Jing-Jing Lv ◽  
Ya-Nan Zhong ◽  
Chao Xu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Trapping ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer

2019 ◽  
Vol 28 (8) ◽  
pp. 086801 ◽  
Author(s):  
Wen-Ting Zhang ◽  
Fen-Xia Wang ◽  
Yu-Miao Li ◽  
Xiao-Xing Guo ◽  
Jian-Hong Yang
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Trapping ◽  
Floating Gate ◽  
Organic Field Effect Transistor ◽  
Floating Gate Memory ◽  
Effect Transistor

Metal nanoparticles in organic field-effect transistor: Transition from charge trapping to conduction mechanism

2014 ◽  
Vol 554 ◽  
pp. 189-193 ◽  
Author(s):  
Keanchuan Lee ◽  
Martin Weis ◽  
Xiangyu Chen ◽  
Dai Taguchi ◽  
Takaaki Manaka ◽  
...  
Keyword(s):  
Metal Nanoparticles ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Conduction Mechanism ◽  
Charge Trapping ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

scholarly journals Organic Field-Effect Transistor Memory Device Based on an Integrated Carbon Quantum Dots/Polyvinyl Pyrrolidone Hybrid Nanolayer

Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 753
Author(s):  
Wenting Zhang ◽  
Xiaoxing Guo ◽  
Jinchao Yin ◽  
Jianhong Yang
Keyword(s):  
Quantum Dots ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Trapping ◽  
Dielectric Materials ◽  
Memory Device ◽  
Carbon Quantum Dots ◽  
Polyvinyl Pyrrolidone ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

In this work, we present a pentacene-based organic field-effect transistor memory (OFETM) device, which employs one-step microwave-assisted hydrothermal carbon quantum dots (CQDs) embedded in a polyvinyl pyrrolidone (PVP) matrix, to form an integrated hybrid nanolayer as the charge trapping layer. The as-prepared CQDs are quasi-spherical amorphous C, with sizes ranging from 5 to 20 nm, with a number of oxygen-containing groups and likely some graphite-like domains that produce CQDs with excellent electron-withdrawing characteristics. The incorporation of CQDs into PVP dielectric materials results in a bidirectional storage property. By optimizing the concentration of CQDs embedded into the PVP matrix, the OFETM shows excellent memory characteristics with a large memory window of 8.41 V under a programming/erasing (P/E) voltage of ± 60 V and a retention time of up to 104 s.

Synergistic Effects of Self-Doped Nanostructures as Charge Trapping Elements in Organic Field Effect Transistor Memory

2016 ◽  
Vol 8 (29) ◽  
pp. 18969-18977 ◽  
Author(s):  
Haifeng Ling ◽  
Jinyi Lin ◽  
Mingdong Yi ◽  
Bin Liu ◽  
Wen Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Synergistic Effects ◽  
Charge Trapping ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Spatial Extent of Interaction between Excitons and Polarons in a Bilayer Organic Field-Effect Transistor

ACS Photonics ◽  
2021 ◽  
Author(s):  
Haripriya Kesavan ◽  
Subhamoy Sahoo ◽  
Sanjoy Jena ◽  
Jayeeta Bhattacharyya ◽  
Debdutta Ray
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Spatial Extent ◽  
Organic Field Effect Transistor ◽  
Effect Transistor
Sign in / Sign up

Export Citation Format

Share Document